NEC NE960R575, NE962R575, NE961R500, NE960R500 Datasheet

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE960R5 SERIES

0.5 W X, Ku-BAND POWER GaAs MES FET

DESCRIPTION

The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• High Output Power : P

• High Linear Gain : 9.0 dB TYP.

• High Power Added Efficiency: 30 % TYP. @VDS = 9 V, I

o (1 dB)

= +27.5 dBm TYP.

ORDERING INFORMATION

Part Number Package Supplying Form NE960R500 NE961R500 NE960R575 NE962R575

Remark

00 (CHIP)

75

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE960R500, NE960R575, NE961R500, NE962R575)

ESD protective envelope

Dset

= 180 mA, f = 14.5 GHz

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14387EJ1V0DS00 (1st edition) Date Published July 1999 N CP(K) Printed in Japan

1999©

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

NE960R5 SERIES

Drain to Source Voltage V Gate to Source Voltage V Drain Current I Gate Forward Current I Gate Reverse Current I Total Power Dissipat i on P Channel Temperature T Storage Temperature T

Notes 1.

NE962R575

NE961R500

2.

DS

GSO

D

GF

GR

T

ch

stg

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Condition MIN. TYP. MAX. Unit Drain to Source Voltage V Gain Compression Gcomp Channel Temperature T

DS

ch

15 V

Note 1

–7 (−9

)

0.7 A +5.0 mA –5.0 mA

Note 2

5.0 (4.2

)

175

–65 to +175

−

−−

9.0 9.0 V

3.0 dB

+130

V

W

°

C

°

C

°

C

ELECTRICAL CHARACTERISTICS

(TA = +25

Saturated Drain Current I Pinch-off Voltage V Gate to Drain Break Down Voltage Gate to Source Break Down

Voltage Thermal Resistance R Output Power at Pin = +19 dBm P Output Power at 1 dB Gain

Compression Point Power Added Efficiency at P Linear Gain

°°°°

C, unless otherwise specified, using NEC standard test fixture.)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Note 1

Note 2

P

Note 1

Notes 1.

Note 1

Except NE962R575 NE962R575 only

2.

NE961R500

3.

o (1dB)

DSS

BV BV

out

o (1 dB)

η

add

G

VDS = 1.5 V, VGS = 0 V 0.18 0.4 0.7 A

p

VDS = 2.5 V, ID = 2 mA –2.5 –1.8 –0. 5 V

gd

Igd = 2 mA 15

gs

Igs = 2 mA 9.0

th

Channel to Case f = 14.5 GHz, VDS = 9.0 V

Ω

g

= 1 k

R

Dset

I

= 180 mA (RF OFF)

L

−−

25.5 26.5

−

8.0 9.0

−−

27.5

30

30 (35

V V

Note 3

)

°C/W

−

dBm dBm

%

dB

Remark

2

DC and RF performance is 100 % testing.

Preliminary Data Sheet P14387EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25°°°°C)

OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER

30

NE960R5 SERIES

60

25

(dBm)

out

20

Output Power P

15

10

5 10152025

300

250

(mA)

D

f = 14.5 GHz (1 tone),

DS

= 9 V, I

Dset

V

g

= 1 kΩ

R

= 180 mA

Input Power Pin (dBm)

DRAIN CURRENT AND GAIN vs. INPUT POWER

45

(%)

add

η

30

Power Added Efficiency

15

0

12

10

200

150

Drain Current I

100

5 10152025

1.5

1.0

(mA)

g

0.5

0.0

Gate Current I

0.5 5 10152025

Input Power P

in

(dBm)

GATE CURRENT vs. INPUT POWER

Input Power P

in

(dBm)

8

Gain (dB)

6

4

Preliminary Data Sheet P14387EJ1V0DS00

3

TYPICAL S-PARAMETER [NE960R575]

NE960R5 SERIES

TEST CONDITIONS: VDS = 9 V, I

FREQUENCY S

11

Dset

= 180 mA

21

S

12

S

22

S

GHz MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.)

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

0.87

0.84

0.82

0.81

0.79

0.73

0.69

0.62

0.63

0.76

0.79

0.87

0.83

–140 –154 –160 –163 –167 –175

171 147 109

47

–21 –45 –53 –60

4.36

2.98

2.36

2.08

1.99

1.96

2.02

2.20

2.30

2.22

0

1.62

1.30

0.90

0.60

0.43

85 68 54 42 33 18

–20 –51

–88 –124 –144 –172

166

150

0.042

0.040

0.043

0.047

0.055

1

0.066

0.076

0.083

0.063

0.032

0.017

0.022

0.034

0.037

23 19 22 32 34 35 30 18

–4 –41 –82

–141

128 101

82

0.23

0.25

0.30

0.32

0.34

0.36

0.37

0.38

0.45

0.57

0.61

0.66

0.73

0.75

START 2 GHz, STOP 16 GHz, STEP 1 GHz

11

0.5

S

1.0

2.0 +135° +45°

S

12

+90°

–131 –143 –149 –154 –160 –168

178 159 136

95 65 49 27 11 –2

0.5 1.0 2.0

0

2 GHz

16 GHz

2 GHz

–2.0

R

max.

R

= 1

–45°

= 5

–0.5

–1.0

S

21

+90°

+135° +45°

±180° 0°

16 GHz

–135°

–90°

16 GHz

∞

±180° 0°

–135°

–90°

22

S

1.0

0.5

0.5 1.0 2.0

0

2 GHz

–0.5

–1.0

2 GHz

R

2.0

–2.0

R

–45°

max.

16 GHz

max.

= 0.1

∞

= 1

4

Preliminary Data Sheet P14387EJ1V0DS00