NEC NE8500295, NE8500200 Datasheet

©

1996

PRELIMINARY DATA SHEET

GaAs MES FET

NE85002 SERIES

2 W C-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

Document No. P10969EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

DESCRIPTION

The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W

partially matched devices. Each packaged device has an input lumped element matching network.

NE8500200 is the six-cells recessed gate chip used in ‘95’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

has a PHS. (Plated Heat Sink)

NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

• Class A operation

• High power output

• High reliability

SELECTION CHART

PERFORMANCE SPECIFIED

PART NUMBER

Pout (**)GL (**) USABLE

(dBm) (dB) FREQUENCY

(GHz)

NE8500200(*) 33.8 min 8.0 min 2.0 to 10
NE8500200-WB(*)
NE8500200-RG(*)

NE8500295-4 33.8 min 10.5 min 3.5 to 5.5
NE8500295-6 33.8 min 9.5 min 5.5 to 7.5
NE8500295-8 33.5 min 8.0 min 7.5 to 8.5

* GB, RG indicate a type of containers for chips.

WB: black carrier, RG: ring,

** Specified at the condition at the last page.

PHYSICAL DIMENSIONS

NE8500200 (CHIP) (unit:

µ

m)

PACKAGE CODE-95 (unit: mm)

640

240100

110
100

100

90

100

1800

14.0 ±0.3

7.2 ±0.2

4.5 MAX.

0.1

5.9 ±0.2

4.0 MIN.

0.7 ±0.1

GATE

2.5 ±0.3 DIA

SOURCE

0.2 MAX.

2.1 ±0.15

1.0

18.5 MAX.

DRAIN

NE85002 SERIES

2

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSX 15 V
Gate to Source Voltage V

GSX –12 V

Gate to Drain Voltage VGDX –18 V
Total Power Disipation(*) PT 13 W
Drain Current I

D 2.5 A

Gate Current IG 13 mA
Channel Temperature Tch 175 ˚C
Storage Temperature T

stg –65 to 175 ˚C

*TC = 25 ˚C

RECOMMENDING OPERATION RANDGE

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Drain to Source Voltage VDS 9–10V
Channel Temperature Tch – – 130 ˚C
Input Power Gcomp – – 3 dBcomp
Gate Resistance Rg – – 2 kΩ

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Saturated Drain Current Idss 950 – 1900 mA Vds = 2.5 V, Vgs = 0 V
Pinch-off Voltage VP –3.0 – –1.0 V Vds = 2.5 V, Ids = 8 mA
Transconductance gm – 600 – mS Vds = 2.5 V, Ids = Idss
Thermal Resistance Rth – 10 15 ˚C/W

NE85002 SERIES

3

PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)

PART NUMBER

PACKAGE CODE
CHARACTERISTIC SYMBOL
Output Power PO

Gate to source Igs
Current

Linear Gain G

L

* Test frequencies are: NE8500200 @8.5 GHz, NE8500295-4 @4.2 GHz, NE8500295-6 @6.5 GHz, NE8500295-8 @8.5 GHz
** Test input power are: NE8500200 @27.0 dBm, NE8500295-4 @24.5 dBm, NE8500295-6 @25.5 dBm, NE8500295-8 @27.0dBm
*** The conditions are the same as the above except this.

TYPICAL PERFORMANCE CURVE (TA = 25 ˚C)

POWER DERATING CURVE

P

T

- Total Power-Dissipation - W

0

12

T

C

- Case Temperature - ˚C

OUTPUT POWER vs. INPUT POWER

P

OUT

- Output Power - dBm

0

40

P

IN

- Input Power - dBm

8

4

0

50 100 150 200

30

20

10

0

5 10 15 20 25 30 35 40

6

4
8

NE8500200
NE8500200-WB
NE8500200-RG

CHIP

MIN. TYP. MAX.

33.8 – –
–––
–––
–––

–2.4 – 2.4

–––

8.0 – –

N8500295-4

95

MIN. TYP. MAX.

–––

33.8 – –
–––
–––

–2.4 – 2.4

–––

10.5 – –

NE8500295-6

95

MIN. TYP. MAX.

–––
–––

33.8 – –
–––
–––

–2.4 – 2.4

9.5 – –

NE8500295-8

95

MIN. TYP. MAX.

–––
–––
–––

33.5 – –
–––

–2.4 – 2.4

8.0 – –

UNIT

dBm
dBm
dBm
dBm

mA

µ

A

dB

TEST CONDITIONS

Pin = 18 dBm (***)

Vds = 10 V
Ids = 450 mA set
Rg = 1kΩ
f(*)
pin(**)