NEC NE76100, NE76184A(22), NE76184A, NE76184B Datasheet
GaAs MES FET
DESCRIPTION
NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity. Its
excellent low noise and high associated gain make it suitable
for DBS, TVRO, GPS and another commercial systems.
FEATURES
• Low noise figure & High associated gain
NF = 0.8 dB TYP., G
a = 12 dB TYP. at f = 4 GHz
ORDERING INFORMATION
PART NUMBER
SUPPLYING
LEAD LENGTH
FORM
NE76184A-SL STICK L = 1.7 mm MIN.
NE76184A-T1 Tape & reel L = 1.0 ± 0.2 mm
NE76184A-T1A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDS 5.0 V
Gate to Source Voltage V
GSO –5.0 V
Gate to Drain Voltage V
GDO –6.0 V
Drain Current I
D 100 mA
Total Power Dissipation P
tot 300 mW
Channel Temperature T
ch 150 ˚C
Storage Temperature T
stg –65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Gate to Source Leak Current IGSO ––10
µ
AVGS = –5 V
Saturated Drain Current IDSS 30 – 100 mA VDS = 3 V, VGS = 0
Gate to Source Cutoff Voltage VGS (off) –0.5 – –3.0 V VDS = 3 V, ID = 100 µA
Transconductance gm 20 45 – mS VDS = 3 V, ID = 10 mA
Noise Figure NF – 0.8 1.4 dB
VDD = 3 V
f = 4 GHz
Associated Gain Ga –12–dB
I
D
= 10 mA
Power Gain Gs – 6 – dB f = 12 GHz
IDSS rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
Document No. P10852EJ2V0DS00 (2nd edition)
(Previous No. TC-2303)
Data Published October 1995 P
Printed in Japan
NE76184A
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
L
L
1.78 ±0.2
L
24
3
0.5 TYP.
L
0.5 TYP.
J
0.1 1.7 MAX.
1. Source
2. Drain
3. Source
4. Gate
1
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
©
1991
DATA SHEET
NE76184A
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - ˚C
0 50 100 150 200
500
400
300
200
100
P
tot
- Total Power Dissipation - mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
0 1 3 4 52
80
60
20
I
D
- Drain Current - mA
40
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
–2.0 –1.0 0
80
60
40
20
0
I
D
- Drain Current - mA
VDS = 3 V
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
f - Frequency - GHz
0 2 30
5
4
3
2
1
NF - Noise Figure - dB
4 6 810 14
20
16
12
8
4
V
DS
= 3 V
I
D
= 10 mA
NF
Ga
G
a
- Associated Gain - dB
3
NE76184A
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
f - Frequency - GHz
01 20
20
16
12
8
4
MSG - Maximum Stable Gain - dB
MAG - Maximum Available Gain - dB
|S
21s
|
2
- Forward Insertion Gain - dB
2468
V
DS
= 3 V
I
D
= 10 mA
1012
MSG
|S
21s
|
2
MAG
NOISE FIGURE, ASSOCIATED GAIN vs.
RATIO OF DRAIN CURRENT AND
ZERO-GATE VOLTAGE CURRENT
I
DS/IDSS
- Ratio of Drain Current and Zero-Gate
Voltage Current - %
2
3.0
2.5
2.0
1.5
NF - Noise Figure - dB
10
1.0
0.5
0
1468
40
100
20
60 80
V
DS
= 3 V
f = 4 GHz
16
14
12
10
8
6
4
G
a
NF
G
a
- Associated Gain - dB
Gain Calculations
MSG
S
S
K
1SS
2S S
MSG
S
S
KK1 SS SS
21
12
2
11222
2
12 21
21
12
2
11 22 21 12
==
+− −
=±−
=⋅−⋅
∆
∆
OUTPUT POWER vs. INPUT POWER
Pin - Input Power - dBm
–10
+15
Pout - Output Power - dBm
VDS = 3 V, ID = 30 mA
f
in
= 11 GHz
+10
+5
0
–5
–5 0 +5 +10
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