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L to Ku BAND LOW NOISE AMPLIFIER
FEATURES
Low noise figure
x
NF = 0.6 dB TYP. at f = 4 GHz
High associated gain
x
Ga = 14 dB TYP. at f = 4 GHz
Gate width: Wg = 280
x
Gate Length: Lg = 0.3 Pm
x
m
P
DATA SHEET
GaAs MES FET
NE713
N-CHANNEL GaAs MES FET
ORDERING INFORMATION
PART NUMBER I
NE71300-N 20 to 50 00 (CHIP)
NE71300-M 50 to 80
NE71300-L 80 to 120
NE71383B 20 to 120 83B
DSS
(mA) PACKAGE CODE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
D
DS
GSO
GDO
tot
ch
stg
5.0 V
5.0 V
ð
6.0 V
ð
DSS
I
270 mW [NE71383B]
400 mW [NE71300]
175 °C
65 to +175 °C
ð
Drain to Source Voltage V
Gate to Source Voltage V
Gate to Drain Voltage V
Drain Current I
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
mA
CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit
Drain to Source Voltage V
Drain Current I
Input Power P
Document No. P11691EJ2V0DS00 (2nd edition)
Date Published February 1997 N
Printed in Japan
DS
D
in
34V
10 30 mA
15 dBm
©
1996
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ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
NE713
Gate to Source Leak Current I
Saturated Drain Current I
Gate to Source Cut off Voltage V
GSO
DSS
GS (off)
− 1.0 10
AVGS = −5 V
µ
20 40 120 mA VDS = 3 V, VGS = 0 V
DS
−0.5 −1.1 −3.5 V V
= 3 V, ID = 100 µA
Transconductance gm 20 50 − mS VDS = 3 V, ID = 10 mA
Noise Figure NF 0.6 0.7 dB f = 4 GHz VDS = 3 V
Associated Gain Ga 11.5 14.0 dB ID = 10 mA
Noise Figure NF 1.6 1.8 dB f = 12 GHz
Associated Gain Ga 8.0 9.5 dB
Output Power at 1 dB Gain
Compression Point
Thermal Resistance R
P
o (1 dB)
th
14.5 dBm f = 12 GHz VDS = 3 V
D
I
= 30 mA
190 °C/W NE71300 Channel to case
450 °C/W NE71383B
PACKAGE DIMENSIONS (Unit : mm) [NE71383B]
1.88 ± 0.3
1
1.88 ± 0.3
4.0 MIN.
2
4.0 MIN.
3
1.0 ± 0.1
1.
2.
3.
4.
Source
Drain
Source
Gate
4.0 MIN.
4.0 MIN.
1.45 MAX.
+0.07
−0.03
0.1
0.5 ± 0.1
4
2
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CHIP DIMENSIONS (Unit: µµm) [NE71300]
64123 76
122
Drain Drain
450
NE713
60
54
52
120
70
400
GateGate
67
Source Source
48
18
52445657
40
118
Thickness = 140 µm
: BONDING AREA
3
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TYPICAL CHARACTERISTICS (TA = 25 °°C)
NE713
400
300
200
100
Ptot − Total Power Dissipation − mW
50
40
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
40
NE71300
−0.2 V
30
NE71383B
20
D − Drain Current − mA
I
10
0
50 100 150 200
TA − Ambient Temperature − °C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0 12345
DS − Drain to Source Voltage − V
V
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
−0.4 V
−0.6 V
24
VDS = 3 V
VDS = 3 V
ID = 10 mA
20
30
20
D − Drain Current − mA
I
10
0
−2.0 −1.0 0
V
GS − Gate to Source Voltage − V
3.0
a
G
2.0
NF − Noise Figure − dB
1.0
NF
0
1246
f − Frequency − GHz
810 14 20 30
16
12
Ga - Associated Gain - dB
8
4
4
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S-PARAMETER [NE71383B]
DS = 3 V, ID = 10 mA
V
START 500 MHz,
STOP 18 GHz,
STEP 500 MHz
0
NE713
S11
1.0
2.00.5
5
Marker
1 : 2 GHz
2 : 4 GHz
∞
4
3 : 8 GHz
4 : 12 GHz
5 : 16 GHz
3
− 0.5
2
− 1.0
S
22
1.0
5
0
1
− 2.0
2.00.5
∞
− 0.5
4
2
3
− 1.0
1
− 2.0
5