NEC NE71300-L, NE71383B, NE71300-N, NE71300-M Datasheet

L to Ku BAND LOW NOISE AMPLIFIER

FEATURES

Low noise figure

x

NF = 0.6 dB TYP. at f = 4 GHz High associated gain

x

Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280

x

Gate Length: Lg = 0.3 Pm

x

m

P

DATA SHEET

GaAs MES FET

NE713

N-CHANNEL GaAs MES FET

ORDERING INFORMATION

PART NUMBER I

NE71300-N 20 to 50 00 (CHIP) NE71300-M 50 to 80

NE71300-L 80 to 120

NE71383B 20 to 120 83B

DSS

(mA) PACKAGE CODE

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

D

DS GSO GDO

tot

ch stg

5.0 V

ð

6.0 V

ð

DSS

I 270 mW [NE71383B] 400 mW [NE71300] 175 °C

65 to +175 °C

ð

Drain to Source Voltage V Gate to Source Voltage V Gate to Drain Voltage V Drain Current I Total Power Dissipation P

Channel Temperature T Storage Temperature T

RECOMMENDED OPERATING CONDITION (TA = 25 °C)

mA

CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit Drain to Source Voltage V Drain Current I Input Power P

Document No. P11691EJ2V0DS00 (2nd edition) Date Published February 1997 N Printed in Japan

DS

D

in

34V

10 30 mA

15 dBm

©

1996

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

NE713

Gate to Source Leak Current I Saturated Drain Current I Gate to Source Cut off Voltage V

GSO

DSS

GS (off)

− 1.0 10

AVGS = −5 V

µ

20 40 120 mA VDS = 3 V, VGS = 0 V

DS

−0.5 −1.1 −3.5 V V

= 3 V, ID = 100 µA Transconductance gm 20 50 − mS VDS = 3 V, ID = 10 mA Noise Figure NF 0.6 0.7 dB f = 4 GHz VDS = 3 V Associated Gain Ga 11.5 14.0 dB ID = 10 mA Noise Figure NF 1.6 1.8 dB f = 12 GHz Associated Gain Ga 8.0 9.5 dB Output Power at 1 dB Gain Compression Point Thermal Resistance R

P

o (1 dB)

th

14.5 dBm f = 12 GHz VDS = 3 V

D

I

= 30 mA 190 °C/W NE71300 Channel to case 450 °C/W NE71383B

PACKAGE DIMENSIONS (Unit : mm) [NE71383B]

1.88 ± 0.3 1

1.88 ± 0.3

4.0 MIN. 2

4.0 MIN.

3

1.0 ± 0.1

1.

2.

3.

4.

Source Drain Source Gate

4.0 MIN.

1.45 MAX.

+0.07

−0.03

0.1

0.5 ± 0.1

4

2

CHIP DIMENSIONS (Unit: µµm) [NE71300]

64123 76



122

Drain Drain

450

NE713

60



54

52

120

70



400

GateGate



67



Source Source

48

18

52445657



40



118

Thickness = 140 µm

: BONDING AREA

3

TYPICAL CHARACTERISTICS (TA = 25 °°C)

NE713

400

300

200

100

Ptot − Total Power Dissipation − mW

50

40

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

VGS = 0 V

40

NE71300

−0.2 V

30

NE71383B

20

D − Drain Current − mA

I

10

0

50 100 150 200

TA − Ambient Temperature − °C

DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE

0 12345

DS − Drain to Source Voltage − V

V

NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY

−0.4 V

−0.6 V

24

VDS = 3 V

VDS = 3 V ID = 10 mA

20

30

20

D − Drain Current − mA

I

10

0

−2.0 −1.0 0 V

GS − Gate to Source Voltage − V

3.0

a

G

2.0

NF − Noise Figure − dB

1.0

NF

0

1246

f − Frequency − GHz

810 14 20 30

16

12

Ga - Associated Gain - dB

8

4

S-PARAMETER [NE71383B]

DS = 3 V, ID = 10 mA

V START 500 MHz, STOP 18 GHz, STEP 500 MHz

0

NE713

S11

1.0

2.00.5

5

Marker 1 : 2 GHz 2 : 4 GHz

∞

4

3 : 8 GHz 4 : 12 GHz 5 : 16 GHz

3

− 0.5

2

− 1.0

S

22

1.0

5

0

1

− 2.0

2.00.5

∞

− 0.5

4

2

3

− 1.0

1

− 2.0

5