NEC NE678M04 Technical data

查询NE678M04供应商

MEDIUM POWER NPN SILICON

HIGH FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH:

T = 12 GHz

f

• HIGH OUTPUT POWER:
P-1dB = 18 dBm at 1.8 GHz

• HIGH LINEAR GAIN:

G

L

= 13 dB at 1.8 GHz

• NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance

DESCRIPTION

The NE678M04 is fabricated using NEC's HFT3 wafer pro­cess. With a transition frequency of 12 GHz, the NE678M04 is
usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.

The NE678M04 is housed in NEC's new low profile/flat lead
style "M04" package

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE678M04

PACKAGE OUTLINE M04

EIAJ3 REGISTRATION NUMBER 2SC5753

2.0±0.1

1.25

2.05±0.1

+0.30

-0.05

1.25±0.1

+0.40

2

R55

0.65

0.65

1

+0.01

+0.30

-0.05

0.59±0.05

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

NE678M04

3

0.65

1.30

0.65

4

(leads 1, 3 and ,4)

+0.1

-0.05

+0.11

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100

DC

hFE DC Current1 Gain at VCE = 3 V, IC = 30 mA 75 120 150

P1dB Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA, dBm 18.0

GL Linear Gain at VCE = 2.8 V, IC = 10 mA, f = 1.8 GHz, Pin = -5 dBm dB 13.0

MAG Maximum Available Gain4 at VCE = 3 V, IC = 30 mA, f = 2 GHz dBm 13.5

RF

|S21E|

ηc Collector Efficiency at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, % 55

NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt dB 1.7 2.5

fT Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz GHz 12.0

Cre Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz pF 0.42 0.7

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

guard pin of capacitance meter.

3. Electronic Industrail Association of Japan.

21

|

MAG =

|S
|S12|

4.

f = 1.8 GHz, Pin = 7 dBm

2

Insertion Power Gain at VCE = 3 V, IC = 30 mA, f = 2 GHz dB 8.0 10.5

Pin = 7 dBm

(K ±

2

K - 1

).

California Eastern Laboratories

NE678M04

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

VCBO Collector to Base Voltage V 9.0
VCEO Collector to Emitter Voltage V 6.0

EBO Emitter to Base Voltage V 2.0

V

IC Collector Current mA 100

P

T Total Power Dissipation

2

mW 205

TJ Junction Temperature °C 150

STG Storage Temperature °C -65 to +150

T

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.

TYPICAL PERFORMANCE CURVES (TA = 25 °C)

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

300

250

(mW)

out

205

200

150

100

50

Total Power Dissipation P

25 50

0

Ambient Temperature TA (ºC)

Mounted on Glass Epoxy PCB

2

x 1.0 mm (t) )

(1.08 cm

100

75

125 150

ORDERING INFORMATION

PART NUMBER QUANTITY

NE678M04-T2 3k pcs./reel

THERMAL RESISTANCE

SYMBOLS PARAMETERS UNITS RATINGS

Rth j-a Thermal Resistance from °C/W 600

Note:

1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.

(pF)

re

Reverse Transfer Capacitance C

Junction to Ambient

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1

2

0

3

f= 1 MHz

4

Collector to Base Voltage VCB (V)

6

5

vs. COLLECTOR TO EMITTER VOLTAGE

COLLECTOR CURRENT

100

90
80
70

(mA)

C

60
50
40

30

Collector Current I

20
10

0246

700 µA

600 µA

500 µA

400 µA

300 µA

Collector to Emitter Voltage VCE (V)

200 µA

IB =100 µA

DC CURRENT GAIN

vs. COLLECTOR CURRENT

1000

)

FE

100

VCE = 3 V

DC Current Gain (h

10

8

0.1 1

10

100

Collector Current IC (mA)

TYPICAL PERFORMANCE CURVES (TA = 25 °C)

NE678M04

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

15

VCE = 3 V
f = 2 GHz

(GHz)

T

10

5

Gain Bandwidth Product f

0

110100

Collector Current IC (mA)

INSERTION POWER GAIN,

MAG, MSG vs. COLLECTOR CURRENT

25

VCE = 3 V
f = 1 GHz

20

, (dB)

2

|

21e

15

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

, (dB)

2

|

21e

35

30

MSG

25

MAG

VCE = 3 V
I

C

= 30 mA

20

15

10

Insertion Power Gain |S

5

Maximum Stable Power Gain MSG (dB)

0

Maximum Available Power Gain MAG (dB)

0.1

2

|S

21e

|

110

Frequency f (mA)

INSERTION POWER GAIN,

MAG, MSG vs. COLLECTOR CURRENT

25

20

15

VCE = 3 V
f = 2 GHz

MSG

MAG

MSG

2

|S

21e

|

MAG

, (dB)

2

|

21e

10

5

Insertion Power Gain |S

Maximum Stable Power Gain MSG (dB)

0

Maximum Available Power Gain MAG (dB)

110100

Collector Current IC (mA)

INSERTION POWER GAIN,

MAG vs. COLLECTOR CURRENT

25

VCE = 3 V
f = 2.5 GHz

20

, (dB)

2

|

21e

15

MAG

10

2

21e

|

5

|S

Insertion Power Gain |S

0

Maximum Available Power Gain MAG (dB)

Collector Current IC (mA)

10

2

|S

21e

|

5

Insertion Power Gain |S

Maximum Stable Power Gain MSG (dB)

0

Maximum Available Power Gain MAG (dB)

100101

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

8

VCE = 3 V
f = 2 GHz

G

6

a

4

Noise Figure NF (dB)

2

NF

100101

0

110100

16

12

(dB)

a

8

4

Associated Gain G

0

Collector Current IC (mA)