NEC NE66719 Technical data

查询NE66719供应商

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH: fT = 21 GHz

• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

• HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz

DESCRIPTION

NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT
wafer process. This device is ideal for oscillator or low noise
amplifier applications at 2 GHz and above.

NE66719

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 19

1.6±0.1

0.8±0.1

2

1.6±0.1

1.0

0.75±0.05

0.5

0.5

+0.1

1

0.6

0.2

U B

-0

3

+0.1

-0

0.3

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

0 to 0.1

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE66719

EIAJ1 REGISTERED NUMBER 2SC55667

PACKAGE OUTLINE 19

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100

DC

hFE Forward Current Gain2 at VCE = 2 V, IC = 5 mA 50 70 100

fT Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz GHz 18 21
MAG Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 12.5
MSG Maximum Stable Gain5 at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 13.5

2

|S21e|

RF

Notes:

2

|S21e|

NF Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT dB 1.1 1.5
IP3 Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz 22
Cre Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF 0.24 0.30

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

4. MAG =

Insertion Power Gain at VCE = 1 V, IC = 10 mA, f = 2 GHz dB 9.0 11.0
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 9.5 11.5

S21

(K- )

S12

(K2 -1)

+0.1

-0.05

0.15

5. MSG =

S21
S12

California Eastern Laboratories

NE66719

ABSOLUTE MAXIMUM RATINGS

SYMBOLS PARAMETERS UNITS RATINGS

VCBO Collector to Base Voltage V 15
VCEO Collector to Emitter Voltage V 3.3
VEBO Emitter to Base Voltage V 1.5

IC Collector Current mA 35

T Total Power Dissipation

P
T

J Junction Temperature °C 150

TSTG Storage Temperature °C -65 to +150

Note:

1. Operation in excess of any one of these parameters may result
in permanent damage.

2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy substrate.

2

1

(TA = 25°C)

mW 115

ORDERING INFORMATION

PART NUMBER QUANTITY PACKAGING

NE66719 Bulk 8 mm wide embossed taping
NE66719-T1 3k pcs/reel Pin 3 (collector) faces

the perforation

TYPICAL NOISE PARAMETERS (TA = 25˚C)

FREQ. NFMIN GA

(GHz) (dB) (dB) MAG ANG Rn/50

VCE = 2 V, IC = 3 mA

0.8 0.83 18.1 0.37 22.9 0.22

1.0 0.86 16.3 0.36 29.3 0.21

1.5 0.93 13.2 0.31 46.7 0.19

1.8 0.97 11.9 0.26 60.0 0.16

2.0 1.00 11.1 0.23 70.8 0.15

2.5 1.07 9.6 0.16 107.0 0.12

VCE = 2 V, IC = 5 mA

0.8 0.88 18.5 0.24 19.6 0.19

1.0 0.91 16.7 0.23 26.6 0.18

1.5 0.96 13.5 0.18 41.2 0.17

1.8 1.00 12.2 0.14 54.6 0.15

2.0 1.02 11.4 0.11 68.2 0.14

2.5 1.08 9.8 0.06 128.5 0.12

VCE = 2 V, IC = 7 mA

0.8 1.07 19.1 0.13 35.5 0.17

1.0 1.09 17.0 0.12 11.3 0.17

1.5 1.13 13.8 0.06 27.3 0.16

1.8 1.16 12.5 0.03 75.9 0.14

2.0 1.17 11.7 0.02 119.0 0.14

2.5 1.22 9.9 0.07 -115.5 0.14

VC = 2 V, IC = 10 mA

0.8 1.25 19.1 0.04 -59.8 0.16

1.0 1.27 17.4 0.03 117.5 0.15

1.5 1.31 13.9 0.04 -75.8 0.16

1.8 1.34 12.5 0.07 -88.8 0.16

2.0 1.35 11.7 0.09 -112.4 0.15

2.5 1.40 10.1 0.16 -112.0 0.15

VC = 2 V, IC = 20 mA

0.8 1.69 19.2 0.15 -146.7 0.16

1.0 1.70 17.3 0.18 -138.6 0.16

1.5 1.74 14.0 0.22 -126.0 0.18

1.8 1.77 12.6 0.24 -121.9 0.19

2.0 1.78 11.8 0.24 -119.9 0.20

2.5 1.83 10.2 0.27 -115.1 0.22

ΓΓ

ΓOPT

ΓΓ

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE66719

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

200

Mounted on Glass Epoxy Board

(mW)

tot

200

115

100

50

(1.08 cm

Total Power Dissipation, P

0

25 50 75 100 125 150

Ambient Temperature, TA (°C) Collector to BaseVoltage VCB (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

40

V

CE

= 2 V

30

(mA)

C

2

x 1.0 mm (t) )

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

0.5

re

0.4

0.3

0.2

0.1

Reverse Transfer Capacitance C

0 1234

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

40

B

50 µA step

I

30

(mA)

C

f = 1 MHz

5

450 µA

20

10

Collector Current, I

0 0.2 0.4 0.6 0.8 1.0 1.2

Base to Emitter Voltage, VBE (V)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1000

100

DC Current Gain, hFE

VCE = 2 V

20

10

Collector Current, l

0

12345

Collector to Emitter Voltage, VcE (V)

GAIN BANDWIDTH vs.

COLLECTOR CURRENT

25

20

(GHz)

T

15

10

Gain Bandwdth, f

5

I

B

= 50 µA

f = 2 GHz

V

CE

= 1 V

250 µA

2 V

10

0.001 0.01

0

0.1

1

10

100

110

Collector Current, IC (mA) Collector Current, IC (mA)

100