查询NE66719供应商
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH: fT = 21 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
DESCRIPTION
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT
wafer process. This device is ideal for oscillator or low noise
amplifier applications at 2 GHz and above.
NE66719
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 19
1.6±0.1
0.8±0.1
2
1.6±0.1
1.0
0.75±0.05
0.5
0.5
+0.1
1
0.6
0.2
U B
-0
3
+0.1
-0
0.3
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0 to 0.1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER NE66719
EIAJ1 REGISTERED NUMBER 2SC55667
PACKAGE OUTLINE 19
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100
DC
hFE Forward Current Gain2 at VCE = 2 V, IC = 5 mA 50 70 100
fT Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz GHz 18 21
MAG Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 12.5
MSG Maximum Stable Gain5 at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 13.5
2
|S21e|
RF
Notes:
2
|S21e|
NF Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT dB 1.1 1.5
IP3 Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz 22
Cre Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF 0.24 0.30
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG =
Insertion Power Gain at VCE = 1 V, IC = 10 mA, f = 2 GHz dB 9.0 11.0
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 9.5 11.5
S21
(K- )
S12
(K2 -1)
+0.1
-0.05
0.15
5. MSG =
S21
S12
California Eastern Laboratories
NE66719
ABSOLUTE MAXIMUM RATINGS
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 15
VCEO Collector to Emitter Voltage V 3.3
VEBO Emitter to Base Voltage V 1.5
IC Collector Current mA 35
T Total Power Dissipation
P
T
J Junction Temperature °C 150
TSTG Storage Temperature °C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy substrate.
2
1
(TA = 25°C)
mW 115
ORDERING INFORMATION
PART NUMBER QUANTITY PACKAGING
NE66719 Bulk 8 mm wide embossed taping
NE66719-T1 3k pcs/reel Pin 3 (collector) faces
the perforation
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ. NFMIN GA
(GHz) (dB) (dB) MAG ANG Rn/50
VCE = 2 V, IC = 3 mA
0.8 0.83 18.1 0.37 22.9 0.22
1.0 0.86 16.3 0.36 29.3 0.21
1.5 0.93 13.2 0.31 46.7 0.19
1.8 0.97 11.9 0.26 60.0 0.16
2.0 1.00 11.1 0.23 70.8 0.15
2.5 1.07 9.6 0.16 107.0 0.12
VCE = 2 V, IC = 5 mA
0.8 0.88 18.5 0.24 19.6 0.19
1.0 0.91 16.7 0.23 26.6 0.18
1.5 0.96 13.5 0.18 41.2 0.17
1.8 1.00 12.2 0.14 54.6 0.15
2.0 1.02 11.4 0.11 68.2 0.14
2.5 1.08 9.8 0.06 128.5 0.12
VCE = 2 V, IC = 7 mA
0.8 1.07 19.1 0.13 35.5 0.17
1.0 1.09 17.0 0.12 11.3 0.17
1.5 1.13 13.8 0.06 27.3 0.16
1.8 1.16 12.5 0.03 75.9 0.14
2.0 1.17 11.7 0.02 119.0 0.14
2.5 1.22 9.9 0.07 -115.5 0.14
VC = 2 V, IC = 10 mA
0.8 1.25 19.1 0.04 -59.8 0.16
1.0 1.27 17.4 0.03 117.5 0.15
1.5 1.31 13.9 0.04 -75.8 0.16
1.8 1.34 12.5 0.07 -88.8 0.16
2.0 1.35 11.7 0.09 -112.4 0.15
2.5 1.40 10.1 0.16 -112.0 0.15
VC = 2 V, IC = 20 mA
0.8 1.69 19.2 0.15 -146.7 0.16
1.0 1.70 17.3 0.18 -138.6 0.16
1.5 1.74 14.0 0.22 -126.0 0.18
1.8 1.77 12.6 0.24 -121.9 0.19
2.0 1.78 11.8 0.24 -119.9 0.20
2.5 1.83 10.2 0.27 -115.1 0.22
ΓΓ
ΓOPT
ΓΓ
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE66719
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
Mounted on Glass Epoxy Board
(mW)
tot
200
115
100
50
(1.08 cm
Total Power Dissipation, P
0
25 50 75 100 125 150
Ambient Temperature, TA (°C) Collector to BaseVoltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
40
V
CE
= 2 V
30
(mA)
C
2
x 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
re
0.4
0.3
0.2
0.1
Reverse Transfer Capacitance C
0 1234
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
B
50 µA step
I
30
(mA)
C
f = 1 MHz
5
450 µA
20
10
Collector Current, I
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to Emitter Voltage, VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
100
DC Current Gain, hFE
VCE = 2 V
20
10
Collector Current, l
0
12345
Collector to Emitter Voltage, VcE (V)
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
25
20
(GHz)
T
15
10
Gain Bandwdth, f
5
I
B
= 50 µA
f = 2 GHz
V
CE
= 1 V
250 µA
2 V
10
0.001 0.01
0
0.1
1
10
100
110
Collector Current, IC (mA) Collector Current, IC (mA)
100
NE66719
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM
STABLE POWER GAIN vs. FREQUENCY
40
35
30
(dB)
2
|
25
21e
20
15
10
5
0
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, |S
0.1 1 10
S21e
MSG
2
MAG
Frequency, f (GHz)
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM STABLE
POWER GAIN vs. COLLECTOR CURRENT
20
18
16
(dB)
2
|
21e
Insertion Power Gain, |S
Maximum Available Power Gain, MAG (dB)
MSG
14
12
10
8
6
4
2
Maximum Stable Power Gain, MSG (dB)
110
MAG
2
S
21e
Collector Current, IC (mA)
CE = 1 V
V
I
C = 20 mA
VCE = 1 V
f = 2 GHz
100
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM
STABLE POWER GAIN vs. FREQUENCY
40
35
(dB)
2
|
21e
Insertion Power Gain, |S
30
25
20
15
10
5
0
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
0.1 1 0
S21e
MSG
2
MAG
Frequency, f (GHz)
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM STABLE
POWER GAIN vs. COLLECTOR CURRENT
20
18
16
(dB)
2
|
21e
Insertion Power Gain, |S
Maximum Available Power Gain, MAG (dB)
MSG
14
12
10
8
6
4
2
Maximum Stable Power Gain, MSG (dB)
0
110
MAG
2
S
21e
Collector Current, IC (mA)
VCE = 2 V
I
C = 20 mA
CE
= 2 V
V
f = 2 GHz
100
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
30
20
10
0
-10
Output Power, Pout (dBm)
-20
-30
-20
Pout
-10
Input Power, Pin (dBm)
CE = 2 V, f = 1 GHz
V
I
cq = 5 mA (RF OFF)
I
C
10 20
0
100
80
60
40
20
0
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
30
20
10
P
out
0
-10
Output Power, Pout (dBm)
-20
-30
-20
Input Power, Pin (dBm)
-10
V
CE
= 1 V, f = 2 GHz
I
cq
= 5 mA (RF OFF)
C
I
10 20
0
100
80
60
40
20
0
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE66719
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
8
6
4
Noise Figure, NF (dB)
2
0
a
G
NF
10 1001
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
8
6
4
G
a
V
CE
= 2 V
f = 1 GHz
CE = 2 V
V
f = 2 GHz
25
20
(dB)
a
15
10
Associated Gain, G
5
0
25
20
(dB)
a
15
10
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
8
G
6
4
a
Noise Figure, NF (dB)
2
0
NF
10 1001
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
8
6
G
4
a
CE = 2 V
V
f = 1.5 GHz
CE = 2 V
V
f = 2.5 GHz
25
20
(dB)
a
15
10
Associated Gain, G
5
0
25
20
(dB)
a
15
10
Noise Figure, NF (dB)
2
0
Collector Current, I
NF
10 1001
C (mA)
5
0
Remark The graphs indicate nominal characteristics.
Associated Gain, G
Noise Figure, NF (dB)
2
0
Collector Current, IC (mA)
5
Associated Gain, G
NF
10 1001
0
NE66719
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 1 V, IC = 5 mA, ZO = 50
FREQUENCY S11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.1 0.822 -12.2 12.268 167.4 0.016 83.6 0.970 -8.8
0.2 0.793 -21.9 11.711 156.4 0.030 76.8 0.933 -17.5
0.3 0.738 -31.8 10.871 146.2 0.043 71.4 0.878 -25.2
0.4 0.678 -39.8 10.101 136.6 0.054 67.3 0.816 -32.0
0.5 0.614 -48.4 9.228 128.3 0.062 64.0 0.753 -37.6
0.6 0.553 -54.5 8.389 121.1 0.070 61.5 0.692 -42.4
0.7 0.501 -60.3 7.694 115.3 0.077 59.8 0.637 -46.3
0.8 0.449 -65.5 7.051 110.0 0.083 58.9 0.592 -49.7
0.9 0.409 -70.1 6.534 104.8 0.089 58.1 0.552 -52.7
1.0 0.369 -75.3 6.062 100.4 0.094 57.9 0.516 -55.3
1.1 0.340 -79.2 5.677 96.3 0.100 57.6 0.486 -57.8
1.2 0.312 -83.2 5.310 92.4 0.105 57.5 0.460 -60.0
1.3 0.285 -88.5 4.979 88.7 0.110 57.4 0.435 -62.1
1.4 0.261 -92.3 4.694 85.3 0.116 57.4 0.413 -64.5
1.5 0.241 -97.8 4.421 82.2 0.122 57.4 0.396 -66.6
1.6 0.223 -101.6 4.224 79.1 0.128 57.5 0.379 -68.8
1.7 0.210 -107.6 4.011 76.1 0.134 57.6 0.364 -70.9
1.8 0.187 -113.6 3.825 73.3 0.140 57.6 0.350 -73.1
1.9 0.180 -119.9 3.653 70.4 0.147 57.2 0.337 -75.5
2.0 0.170 -127.5 3.513 67.5 0.154 57.3 0.326 -78.1
2.1 0.167 -134.5 3.392 65.1 0.160 57.4 0.315 -80.6
2.2 0.162 -140.7 3.255 62.8 0.167 57.1 0.306 -83.5
2.3 0.160 -146.2 3.142 59.9 0.174 57.0 0.298 -86.4
2.4 0.163 -154.2 3.041 57.4 0.182 56.7 0.289 -89.7
2.5 0.165 -158.4 2.938 55.2 0.189 56.2 0.280 -93.3
2.6 0.167 -163.3 2.853 52.7 0.197 55.8 0.275 -97.1
2.7 0.174 -169.0 2.774 50.6 0.204 55.4 0.269 -101.3
2.8 0.175 -173.8 2.687 48.2 0.212 54.8 0.265 -105.0
2.9 0.178 -179.0 2.616 46.0 0.220 54.1 0.259 -108.6
3.0 0.182 173.3 2.548 43.9 0.229 53.6 0.253 -113.3
4.0 0.339 139.7 2.015 21.3 0.321 43.7 0.301 -166.8
5.0 0.530 117.8 1.546 -0.8 0.398 30.5 0.451 154.0
6.0 0.623 103.9 1.261 -14.3 0.443 17.7 0.585 130.4
7.0 0.713 90.6 0.996 -30.5 0.476 5.6 0.693 112.1
8.0 0.772 85.2 0.828 -33.0 0.495 -2.3 0.752 99.3
ΩΩ
Ω
ΩΩ
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 2 V, IC = 5 mA, ZO = 50
FREQUENCY S11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.1 0.845 -9.9 11.956 168.4 0.014 86.8 0.978 -7.7
0.2 0.821 -19.3 11.451 158.1 0.027 79.0 0.947 -15.3
0.3 0.769 -27.8 10.734 148.4 0.039 73.5 0.901 -22.3
0.4 0.712 -35.8 10.039 139.3 0.049 69.2 0.846 -28.4
0.5 0.654 -43.2 9.282 131.4 0.057 66.3 0.789 -33.6
0.6 0.596 -48.8 8.499 124.2 0.065 63.6 0.734 -38.0
0.7 0.539 -53.8 7.844 118.2 0.071 62.1 0.682 -41.8
0.8 0.492 -58.6 7.217 113.2 0.077 60.9 0.637 -45.0
0.9 0.450 -62.4 6.715 107.9 0.083 60.4 0.600 -47.6
1.0 0.409 -66.4 6.309 103.5 0.088 59.9 0.564 -50.1
1.1 0.378 -70.4 5.886 99.4 0.093 59.7 0.533 -52.4
1.2 0.347 -73.8 5.532 95.4 0.098 59.5 0.507 -54.5
1.3 0.322 -77.2 5.212 91.8 0.103 59.5 0.484 -56.6
1.4 0.295 -80.9 4.914 88.4 0.109 59.5 0.461 -58.6
1.5 0.272 -84.3 4.645 85.0 0.114 59.6 0.443 -60.5
1.6 0.254 -87.4 4.437 81.8 0.120 59.7 0.426 -62.3
1.7 0.233 -91.3 4.220 79.0 0.126 59.9 0.411 -64.2
1.8 0.212 -96.3 4.028 76.0 0.131 60.0 0.397 -66.2
1.9 0.200 -100.3 3.851 73.2 0.138 59.9 0.384 -68.2
2.0 0.183 -106.4 3.710 70.5 0.145 60.0 0.373 -70.4
2.1 0.177 -113.6 3.579 67.9 0.151 60.2 0.361 -72.5
2.2 0.168 -118.9 3.441 65.6 0.158 60.1 0.352 -75.2
2.3 0.163 -121.6 3.319 62.9 0.165 59.9 0.344 -77.6
2.4 0.160 -130.8 3.222 60.4 0.172 59.7 0.335 -80.3
2.5 0.156 -137.4 3.120 58.1 0.179 59.4 0.324 -83.4
2.6 0.157 -140.2 3.031 55.8 0.187 59.2 0.319 -86.8
2.7 0.158 -146.1 2.945 53.5 0.194 58.7 0.312 -90.3
2.8 0.154 -153.9 2.861 51.3 0.202 58.3 0.306 -93.3
2.9 0.151 -158.8 2.781 49.1 0.210 57.6 0.299 -96.5
3.0 0.156 -167.1 2.705 46.8 0.219 57.1 0.290 -100.5
4.0 0.297 149.1 2.171 24.0 0.316 47.7 0.312 -152.1
5.0 0.504 123.2 1.700 1.0 0.401 34.0 0.448 163.8
6.0 0.605 107.5 1.371 -13.7 0.453 20.3 0.587 136.6
7.0 0.704 93.5 1.082 -30.8 0.488 7.3 0.701 116.1
8.0 0.767 87.3 0.877 -33.9 0.506 -1.2 0.760 102.0
ΩΩ
Ω
ΩΩ
NE66719
NE66719
.
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 2 V, IC = 20 mA, ZO = 50
FREQUENCY S11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.1 0.660 -16.7 21.907 161.6 0.012 80.0 0.931 -11.7
0.2 0.585 -28.5 19.701 146.5 0.024 76.1 0.852 -22.2
0.3 0.505 -39.1 17.100 134.4 0.033 73.2 0.761 -30.0
0.4 0.444 -46.6 14.863 124.2 0.041 70.8 0.678 -35.3
0.5 0.381 -53.2 12.907 116.5 0.048 70.0 0.607 -38.9
0.6 0.328 -57.1 11.320 110.0 0.055 69.3 0.551 -41.6
0.7 0.287 -60.5 10.052 105.0 0.062 69.3 0.505 -43.4
0.8 0.255 -63.8 9.004 100.7 0.069 69.3 0.470 -44.9
0.9 0.228 -66.4 8.170 96.5 0.076 69.2 0.442 -46.2
1.0 0.202 -69.7 7.508 93.0 0.083 69.1 0.419 -47.4
1.1 0.181 -72.3 6.927 89.8 0.090 69.0 0.399 -48.7
1.2 0.161 -74.2 6.421 86.5 0.097 68.8 0.382 -50.0
1.3 0.148 -77.6 5.974 83.8 0.104 68.4 0.367 -51.3
1.4 0.135 -82.0 5.611 81.0 0.111 68.0 0.352 -52.8
1.5 0.117 -83.8 5.262 78.5 0.119 67.6 0.341 -54.4
1.6 0.106 -87.9 4.994 75.9 0.126 67.2 0.330 -55.9
1.7 0.098 -94.4 4.720 73.7 0.134 66.7 0.320 -57.4
1.8 0.085 -101.7 4.482 71.2 0.142 66.2 0.309 -59.2
1.9 0.074 -108.3 4.274 68.8 0.150 65.4 0.301 -61.2
2.0 0.070 -118.5 4.102 66.4 0.158 64.9 0.293 -63.4
2.1 0.071 -131.9 3.958 64.3 0.166 64.3 0.284 -65.5
2.2 0.066 -145.1 3.794 62.5 0.174 63.6 0.277 -68.1
2.3 0.071 -147.6 3.648 60.1 0.182 62.9 0.271 -70.7
2.4 0.079 -160.0 3.531 58.0 0.190 62.0 0.263 -73.6
2.5 0.079 -168.3 3.406 56.0 0.198 61.1 0.253 -76.9
2.6 0.087 -169.9 3.301 53.8 0.207 60.2 0.248 -80.5
2.7 0.094 -176.2 3.212 52.2 0.215 59.4 0.241 -84.3
2.8 0.098 176.4 3.110 50.1 0.223 58.4 0.235 -87.7
2.9 0.102 170.7 3.024 48.1 0.231 57.4 0.228 -91.3
3.0 0.111 161.5 2.945 46.0 0.240 56.5 0.219 -95.6
4.0 0.279 137.1 2.345 26.1 0.329 44.7 0.238 -155.9
5.0 0.484 117.4 1.854 5.5 0.402 31.3 0.375 159.4
6.0 0.577 104.4 1.555 -8.8 0.446 18.6 0.515 135.1
7.0 0.684 92.6 1.265 -26.0 0.480 6.6 0.641 116.5
8.0 0.757 86.6 1.058 -31.5 0.499 -1.5 0.709 103.3
ΩΩ
Ω
ΩΩ
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd
10/23/02
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