NEC NE664M04 Technical data

查询NE664M04供应商

NEC's

MEDIUM POWER NPN

SILICON HIGH FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH:

T = 20 GHz

f

• HIGH OUTPUT POWER:
P

-1dB = 26 dBm at 1.8 GHz

• HIGH LINEAR GAIN:

GL = 12 dB at 1.8 GHz

• LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance

DESCRIPTION

NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz f
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even
with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or fixed
wireless applications.

The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package

ELECTRICAL CHARACTERISTICS (TA = 25°C)

T wafer process. With a transition frequency of

2.0±0.1

1.25

2.05±0.1

+0.30

-0.05

1.25±0.1

+0.40

2

0.65

0.65

1

+0.01

+0.30

-0.05

0.59±0.05

PIN CONNECTIONS

1. Emitter

2. Collector

NE664M04

R57

3

0.65

0.65

4

(leads 1, 3 and ,4)

3. Emitter

4. Base

1.30

+0.1

+0.11

-0.05

PART NUMBER NE664M04

PACKAGE OUTLINE M04

EIAJ3 REGISTRATION NUMBER 2SC5754

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 1000
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 1000

DC

hFE DC Current1 Gain at VCE = 3 V, IC = 100 mA 40 60 100

P1dB Output Power at 1 dB compression point at VCE = 3.6 V, ICQ = 4 mA, dBm 26.0

GL Linear Gain at VCE = 3.6 V, ICQ = 20 mA, f = 1.8 GHz, Pin = 0 dBm, dB 12.0

MAG Maximum Available Power Gain4 at VCE = 3 V, IC = 100 mA, f = 2 GHz dBm 12.0

RF

|S21E|

ηc Collector Efficiency, 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm, % 60

fT Gain Bandwidth at VCE = 3 V, IC = 100 mA, f = 0.5 GHz GHz 16 20

Cre Feedback Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz pF 1.0 1.5

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

guard pin of capacitance meter.

3. Electronic Industrail Association of Japan

21

MAG =

|S
|S12|

4.

f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle

1/2 Duty Cycle

2

Insertion Power Gain at VCE = 3 V, IC = 100 mA, f = 2 GHz dB 5.0 6.5

1/2 Duty Cycle

K -

2

K - 1

).

|

(

California Eastern Laboratories

NE664M04

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

VCBO Collector to Base Voltage V 13
VCEO Collector to Emitter Voltage V 5.0

EBO Emitter to Base Voltage V 1.5

V

IC Collector Current mA 500

P

T Total Power Dissipation

2

mW 735

TJ Junction Temperature °C 150

STG Storage Temperature °C -65 to +150

T

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.

APPLICATIONS

Bluetooth Power Class 1
f = 2.4 GHz

T80

0 dBm 13 dBm 22 dBm

ORDERING INFORMATION

PART NUMBER QUANTITY

NE664M04-T2 3k pcs./reel

THERMAL RESISTANCE

SYMBOLS PARAMETERS UNITS RATINGS

th j-a1 Junction to Ambient Resistance

R
R

th j-a2 Junction to Ambient Resistance

Note:

1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.

2. Stand alone device in free air.

R57

1

°C/W 170

2

°C/W 570

NE663M04 NE664M04

SS Cordless Phone
f = 2.4 GHz

DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz

R55

5 dBm 16 dBm 25 dBm 35 dBm

NE678M04 NE664M04 NE5520379A

Cordless Phone
f = 0.9 GHz

R57

20 dBm 26 dBm

NE664M04

R57

(MOS FET)

A 3

9Z001

T H

ñ3 dBm 9 dBm 25 dBm

NE68019

(3-pin TUSMM)

R57

NE664M04

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE664M04

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

1000

Mounted on Polyimide PCB

800

(mW)

tot

(38 x 38 mm, t = 0.4 mm)

735

600

400

Stand alone device
in free air

205

200

Total Power Dissipation, P

0255075100 125 150

Ambient Temperature, TA (ºC)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

1000

CE

= 3 V

V

100

(mA)

C

10

1

0.1

Collector Current, I

0.01

0.001

0.5 0.6 0.7 0.8 0.9 1.0

Base to Emitter Voltage, VBE (V)

REVERSE TRANSFER CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

2.0

(pF)

re

1.5

1.0

0.5

Reverse Tramsfer Capacitance, C

0

12345

Collector to Base Voltage, VCB (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

450
400
350

(mA)

C

300
250
200
150
100

Collector Current, I

50

0123456

7 mA

6 mA

5 mA

IB : 0.5 mA step

4 mA

3 mA

Collector to Emitter Voltage, VCE (V)

f = 1 MHz

2 mA

1 mA

I

B

= 0.5 mA

1000

FE

100

DC Current Gain h

10

110

DC CURRENT GAIN vs.

COLLECTOR CURRENT

100

Collector Current, IC (mA)

V

CE

= 3 V

1000