查询NE664M04供应商
NEC's
MEDIUM POWER NPN
SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH:
T = 20 GHz
f
• HIGH OUTPUT POWER:
P
-1dB = 26 dBm at 1.8 GHz
• HIGH LINEAR GAIN:
GL = 12 dB at 1.8 GHz
• LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
DESCRIPTION
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz f
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even
with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or fixed
wireless applications.
The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package
ELECTRICAL CHARACTERISTICS (TA = 25°C)
T wafer process. With a transition frequency of
2.0±0.1
1.25
2.05±0.1
+0.30
-0.05
1.25±0.1
+0.40
2
0.65
0.65
1
+0.01
+0.30
-0.05
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Collector
NE664M04
R57
3
0.65
0.65
4
(leads 1, 3 and ,4)
3. Emitter
4. Base
1.30
+0.1
+0.11
-0.05
PART NUMBER NE664M04
PACKAGE OUTLINE M04
EIAJ3 REGISTRATION NUMBER 2SC5754
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 1000
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 1000
DC
hFE DC Current1 Gain at VCE = 3 V, IC = 100 mA 40 60 100
P1dB Output Power at 1 dB compression point at VCE = 3.6 V, ICQ = 4 mA, dBm 26.0
GL Linear Gain at VCE = 3.6 V, ICQ = 20 mA, f = 1.8 GHz, Pin = 0 dBm, dB 12.0
MAG Maximum Available Power Gain4 at VCE = 3 V, IC = 100 mA, f = 2 GHz dBm 12.0
RF
|S21E|
ηc Collector Efficiency, 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm, % 60
fT Gain Bandwidth at VCE = 3 V, IC = 100 mA, f = 0.5 GHz GHz 16 20
Cre Feedback Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz pF 1.0 1.5
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
21
MAG =
|S
|S12|
4.
f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle
1/2 Duty Cycle
2
Insertion Power Gain at VCE = 3 V, IC = 100 mA, f = 2 GHz dB 5.0 6.5
1/2 Duty Cycle
K -
2
K - 1
).
|
(
California Eastern Laboratories
NE664M04
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 13
VCEO Collector to Emitter Voltage V 5.0
EBO Emitter to Base Voltage V 1.5
V
IC Collector Current mA 500
P
T Total Power Dissipation
2
mW 735
TJ Junction Temperature °C 150
STG Storage Temperature °C -65 to +150
T
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
APPLICATIONS
Bluetooth Power Class 1
f = 2.4 GHz
T80
0 dBm 13 dBm 22 dBm
ORDERING INFORMATION
PART NUMBER QUANTITY
NE664M04-T2 3k pcs./reel
THERMAL RESISTANCE
SYMBOLS PARAMETERS UNITS RATINGS
th j-a1 Junction to Ambient Resistance
R
R
th j-a2 Junction to Ambient Resistance
Note:
1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
2. Stand alone device in free air.
R57
1
°C/W 170
2
°C/W 570
NE663M04 NE664M04
SS Cordless Phone
f = 2.4 GHz
DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz
R55
5 dBm 16 dBm 25 dBm 35 dBm
NE678M04 NE664M04 NE5520379A
Cordless Phone
f = 0.9 GHz
R57
20 dBm 26 dBm
NE664M04
R57
(MOS FET)
A 3
9Z001
T H
ñ3 dBm 9 dBm 25 dBm
NE68019
(3-pin TUSMM)
R57
NE664M04
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE664M04
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1000
Mounted on Polyimide PCB
800
(mW)
tot
(38 x 38 mm, t = 0.4 mm)
735
600
400
Stand alone device
in free air
205
200
Total Power Dissipation, P
0255075100 125 150
Ambient Temperature, TA (ºC)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1000
CE
= 3 V
V
100
(mA)
C
10
1
0.1
Collector Current, I
0.01
0.001
0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, VBE (V)
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2.0
(pF)
re
1.5
1.0
0.5
Reverse Tramsfer Capacitance, C
0
12345
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
450
400
350
(mA)
C
300
250
200
150
100
Collector Current, I
50
0123456
7 mA
6 mA
5 mA
IB : 0.5 mA step
4 mA
3 mA
Collector to Emitter Voltage, VCE (V)
f = 1 MHz
2 mA
1 mA
I
B
= 0.5 mA
1000
FE
100
DC Current Gain h
10
110
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
Collector Current, IC (mA)
V
CE
= 3 V
1000
NE664M04
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT vs.
25
VCE = 3 V
f = 0.5 GHz
20
(GHz)
T
15
10
5
Gain Bandwidth Product, f
0
110100 1000
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V
2
I
21e
f = 1 GHz
15
10
COLLECTOR CURRENT
Collector Current, IC (mA)
MSG MAG
|
S
21e
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
35
2
I
21e
30
25
MSG
MAG
VCE = 3 V
C = 100 mA
I
20
15
10
Insertion Power Gain, IS
5
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
0
|S
21e
|
2
101
Frequency, f (Hz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V
15
f = 2 GHz
MSG
MAG
2
I
21e
2
|
10
5
Insertion Power Gain, IS
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
0
1
10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V
2
I
21e
f = 2.5 GHz
15
MSG
10
MAG
5
Insertion Power Gain, IS
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
0
10 100 10001
Collector Current, IC (mA)
|
S21e
2
|
S
21e
5
|
Insertion Power Gain, IS
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
1000
0
1
10 100
1000
Collector Current, IC (mA)
2
|
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE664M04
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
VCE = 3.2 V, f = 0.9 GHz
I
Cq
= 20 mA, 1/2 Duty
25
20
(dBm)
(dB)
out
p
G
P
15
10
Power Gain, G
Output Power, P
5
Pout
300
250
IC
200
(mA)
C
150
100
Collector Current, I
50
ηc
0
-15 -10
-5
05
10
15
0
Input Power, Pin (dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
VCE = 3.2 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
25
300
250
Pout
20
(dBm)
(dB)
p
out
15
G
10
Power Gain, G
Output Power, P
5
IC
P
(mA)
200
C
150
100
Collector Current, I
50
ηc
0
-10 -5
0
510
15
20
0
Input Power, Pin (dBm)
(%)
C
Collector Efficiency, η
(%)
C
Collector Efficiency, η
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
(dBm)
(dB)
p
out
30
VCE = 3.2 V, f = 2.4 GHz
I
Cq
= 20 mA, 1/2 Duty
25
20
15
GP
10
Pout
I
C
300
250
200
150
100
Power Gain, G
Output Power, P
5
50
ηc
0
-5 0
5
10 15
20
25
0
Input Power, Pin (dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
(dBm)
(dB)
p
out
30
VCE = 3.2 V, f = 1.8 GHz
I
Cq = 20 mA, 1/2 Duty
25
20
15
G
P
10
P
out
300
250
200
I
C
150
100
Power Gain, G
Output Power, P
5
0
-10 -5
0
η
c
510
15
20
50
0
Input Power, Pin (dBm)
(%)
C
(mA)
C
Collector Current, I
Collector Efficiency, η
(%)
C
(mA)
C
Collector Current, I
Collector Efficiency, η
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
VCE = 3.6 V, f = 1.8 GHz
Cq
= 4 mA, 1/2 Duty
I
25
20
(dBm)
(dB)
p
out
15
P
G
10
Power Gain, G
Output Power, P
5
0
-10 -5
0
P
out
η
c
510
15
300
250
(mA)
C
200
I
C
150
100
Collector Current, I
50
0
20
Input Power, Pin (dBm)
(%)
C
Collector Efficiency, η
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
VCE = 3.6 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
25
300
250
Pout
(dBm)
(dB)
p
out
20
15
10
G
P
200
IC
150
100
Power Gain, G
Output Power, P
5
50
ηc
0
-10 -5
0
510
15
20
0
Input Power, Pin (dBm)
(%)
C
(mA)
C
Collector Current, I
Collector Efficiency, η
NE664M04
LARGE SIGNAL IMPEDANCES
FREQUENCY COLLECTOR TO EMITTER SOURCE IMPEDANCE LOAD IMPEDANCE
f (GHz) VOLTAGE VCE (V) ZS (
ΩΩ
Ω)ZL (
ΩΩ
0.9 2.8 to 3.6 8.4 - 5.2j 15.1- 4.3j
1.8 2.8 to 3.6 6.3 - 16.4j 15.8- 6.9j
2.4 2.8 to 3.6 5.9 - 22.1j 15.2- 17.9j
Z
L
Z
S
ΩΩ
Ω)
ΩΩ
f = 0.9 GHz
Z
S
Tr.
f = 1.8 GHz
RF input line
GND
B
E
GND
E
C
Z
L
RF output line
Z
L
Z
S
f = 2.4 GHz
Z
L
Z
S
ZL
ZS
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE664M04
0
-j10
j10
j25
10 25
-j25
j50
S
11
100
50
S
22
-j50
j100
0
0
0.200 to 12.000GHz by 0.100
-j100
180˚
120˚
150˚
-150˚
-120˚
90˚
60˚
30˚
0˚
-30˚
0.200 to 12.000GHz by 0.100
-60˚
-90˚
NE664M04
VC = 1 V, IC = 10 mA
FREQUENCY S11 S21 S12 S22 K MAG
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.50 0.784 -161.6 6.573 95.1 0.075 19.0 0.491 -138.6 0.32 19.44
1.00 0.801 178.1 3.389 77.6 0.081 16.3 0.454 -164.9 0.60 16.23
1.50 0.810 166.2 2.271 65.1 0.084 18.9 0.460 -178.3 0.85 14.33
2.00 0.812 157.2 1.710 54.4 0.090 18.1 0.467 172.5 1.03 11.77
2.50 0.820 149.0 1.378 44.3 0.097 20.8 0.476 165.3 1.16 9.14
3.00 0.827 141.5 1.163 35.2 0.109 20.6 0.482 158.0 1.20 7.60
3.50 0.834 133.6 1.013 26.1 0.119 18.7 0.498 151.0 1.22 6.47
4.00 0.838 125.9 0.901 17.1 0.133 16.2 0.508 143.9 1.22 5.49
4.50 0.845 118.0 0.816 8.6 0.146 11.6 0.525 136.4 1.19 4.84
5.00 0.850 110.4 0.743 0.1 0.160 8.6 0.546 128.9 1.17 4.15
5.50 0.855 102.3 0.678 - 7.5 0.170 5.7 0.570 121.9 1.19 3.40
6.00 0.861 95.2 0.624 - 14.9 0.175 0.9 0.599 115.4 1.18 2.93
6.50 0.866 88.6 0.573 - 21.9 0.190 - 3.9 0.625 108.6 1.15 2.44
7.00 0.874 82.3 0.530 - 28.0 0.195 - 7.7 0.650 102.4 1.14 2.05
7.50 0.881 76.5 0.485 - 34.0 0.198 - 12.6 0.676 95.6 1.14 1.58
8.00 0.889 72.0 0.451 - 38.9 0.203 - 17.2 0.696 89.6 1.13 1.29
8.50 0.898 67.3 0.422 - 44.1 0.211 - 21.6 0.716 83.0 1.09 1.14
9.00 0.905 63.5 0.391 - 48.5 0.205 - 25.6 0.733 76.4 1.11 0.76
9.50 0.911 60.2 0.360 - 52.4 0.208 - 30.2 0.740 70.9 1.11 0.34
10.00 0.916 56.1 0.337 - 56.3 0.208 - 33.9 0.768 63.4 1.12 0.01
10.50 0.917 52.2 0.321 - 60.0 0.209 - 38.7 0.782 58.1 1.12 - 0.24
11.00 0.926 48.4 0.305 - 64.1 0.210 - 42.2 0.793 53.2 1.09 - 0.27
11.50 0.923 44.4 0.295 - 66.4 0.208 - 46.5 0.811 49.2 1.11 - 0.52
12.00 0.931 40.0 0.290 - 69.9 0.221 - 50.7 0.816 46.3 1.06 - 0.27
1
Note:
1. Gain Calculations:
MAG =
|S
21|
(K ±
12|
|S
2
K - 1 ).
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
When K ≤ 1, MAG is undefined and MSG values are used.
MSG =
21|
|S
, K =
|S
12|
2
1 + | ∆ | - |S
2 |S12 S21|
11| - |S22|
2
2
∆ = S
,
11 S22 - S21 S12
NE664M04
120˚
90˚
60˚
30˚
150˚
180˚
-150˚
-120˚
-90˚
-60˚
-30˚
0˚
0.200 to 12.000GHz by 0.100
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
j25
11
S
j100
j10
0
-j10
10 25
-j25
S
22
100
50
-j50
0
0
0.200 to 12.000GHz by 0.100
-j100
NE664M04
VC = 2 V, IC = 100 mA
FREQUENCY S11 S21 S12 S22 K MAG
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.50 0.808 177.3 9.415 90.1 0.027 50.0 0.652 -167.8 0.87 25.50
1.00 0.812 167.0 4.762 77.9 0.046 62.1 0.650 176.3 1.04 18.88
1.50 0.819 158.7 3.176 68.6 0.065 57.6 0.657 166.5 1.07 15.33
2.00 0.822 151.3 2.387 60.0 0.083 53.6 0.662 158.5 1.08 12.85
2.50 0.830 143.8 1.925 51.6 0.106 48.0 0.666 151.4 1.06 11.12
3.00 0.831 137.2 1.616 43.8 0.123 43.3 0.670 144.1 1.07 9.60
3.50 0.834 129.9 1.410 36.0 0.140 37.1 0.669 137.0 1.07 8.45
4.00 0.837 122.8 1.256 27.7 0.159 30.9 0.672 129.3 1.06 7.52
4.50 0.836 115.1 1.138 19.7 0.175 25.2 0.680 121.7 1.06 6.61
5.00 0.843 107.7 1.035 12.1 0.188 18.1 0.691 114.7 1.06 5.96
5.50 0.843 100.1 0.945 4.4 0.197 11.6 0.701 108.2 1.06 5.25
6.00 0.851 93.1 0.868 - 2.5 0.207 6.4 0.715 101.9 1.06 4.71
6.50 0.857 86.5 0.800 - 9.0 0.212 - 0.2 0.731 95.8 1.06 4.23
7.00 0.865 80.8 0.742 - 15.3 0.222 - 4.7 0.745 90.2 1.06 3.80
7.50 0.866 75.4 0.688 - 21.2 0.225 - 10.8 0.751 84.5 1.07 3.29
8.00 0.874 70.6 0.641 - 26.6 0.225 - 15.7 0.761 78.7 1.07 2.94
8.50 0.883 66.5 0.591 - 32.4 0.227 - 19.8 0.772 72.4 1.07 2.56
9.00 0.891 62.6 0.551 - 37.1 0.231 - 25.9 0.774 66.3 1.06 2.24
9.50 0.900 59.2 0.517 - 43.0 0.221 - 30.6 0.788 60.8 1.06 2.17
10.00 0.902 55.6 0.491 - 47.2 0.226 - 34.5 0.796 54.7 1.07 1.80
10.50 0.914 51.8 0.456 - 52.1 0.219 - 39.4 0.805 49.5 1.06 1.69
11.00 0.918 48.1 0.435 - 56.2 0.219 - 43.8 0.810 45.5 1.05 1.54
11.50 0.917 44.1 0.419 - 60.1 0.219 - 47.4 0.822 41.9 1.06 1.31
12.00 0.917 39.7 0.413 - 63.7 0.229 - 50.6 0.822 38.8 1.05 1.13
1
Note:
1. Gain Calculations:
MAG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
|S
21
|
(
12
|
|S
2
K ±
K - 1
).
When K ≤ 1, MAG is undefined and MSG values are used.
MSG =
|S
, K =
|S
12
|
21
|
2
1 + | ∆ | - |S
2 |S
12 S21
11
2
| - |S22|
|
2
,
∆ = S
11 S22
- S21 S
12
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
.
NE664M04
j10
0
-j10
j25
10 25
-j25
j50
11
S
S
22
100
50
-j50
j100
0
0
0.200 to 12.000GHz by 0.100
-j100
180˚
120˚
150˚
-150˚
-120˚
90˚
60˚
30˚
0˚
-30˚
0.200 to 12.000GHz by 0.100
-60˚
-90˚
NE664M04
VC = 3 V, IC = 200 mA
FREQUENCY S11 S21 S12 S22 K MAG
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.50 0.801 175.9 9.856 89.7 0.024 66.8 0.624 -169.4 1.01 25.43
1.00 0.808 166.3 4.975 77.5 0.044 68.0 0.632 175.5 1.07 18.85
1.50 0.815 158.4 3.310 68.2 0.066 62.1 0.633 166.7 1.07 15.41
2.00 0.819 150.9 2.483 59.8 0.084 57.6 0.638 158.1 1.08 12.95
2.50 0.822 143.9 1.996 51.6 0.102 52.3 0.644 150.8 1.09 11.11
3.00 0.830 136.8 1.676 43.6 0.122 43.9 0.648 144.1 1.07 9.80
3.50 0.832 129.7 1.461 35.8 0.138 39.2 0.653 136.7 1.07 8.62
4.00 0.831 122.5 1.299 27.6 0.156 32.6 0.656 129.3 1.07 7.59
4.50 0.835 115.0 1.171 19.8 0.173 26.9 0.662 122.1 1.07 6.75
5.00 0.837 107.6 1.069 12.0 0.187 19.5 0.672 114.9 1.06 6.05
5.50 0.842 100.2 0.979 4.4 0.198 11.8 0.683 108.2 1.06 5.44
6.00 0.848 93.0 0.896 - 2.8 0.211 7.0 0.698 102.1 1.06 4.83
6.50 0.853 86.4 0.828 - 9.1 0.214 1.2 0.711 96.2 1.06 4.32
7.00 0.862 80.5 0.764 - 15.4 0.216 - 4.7 0.724 90.6 1.06 3.92
7.50 0.868 75.4 0.707 - 21.5 0.226 - 9.8 0.736 85.1 1.06 3.47
8.00 0.873 70.4 0.660 - 26.8 0.231 - 15.6 0.748 78.9 1.06 3.08
8.50 0.881 66.5 0.611 - 32.7 0.223 - 20.4 0.750 72.7 1.07 2.72
9.00 0.890 62.7 0.572 - 36.9 0.226 - 24.0 0.764 67.2 1.07 2.45
9.50 0.895 59.3 0.532 - 42.0 0.226 - 30.2 0.771 61.0 1.07 2.11
10.00 0.903 55.7 0.498 - 47.9 0.219 - 33.8 0.779 55.0 1.07 1.91
10.50 0.911 52.0 0.466 - 51.7 0.224 - 38.3 0.793 48.9 1.06 1.64
11.00 0.915 48.3 0.445 - 56.3 0.219 - 43.0 0.794 45.8 1.06 1.53
11.50 0.919 44.1 0.430 - 60.1 0.226 - 46.2 0.810 41.6 1.05 1.40
12.00 0.918 39.8 0.426 - 64.6 0.229 - 49.5 0.811 39.3 1.05 1.34
1
Note:
1. Gain Calculations:
MAG =
K ±
2
K - 1
).
When K ≤ 1, MAG is undefined and MSG values are used.
|S
21
|
(
12
|
|S
MSG =
|S
, K =
|S
12
|
21
|
2
1 + | ∆ | - |S
2 |S
12 S21
11
2
| - |S22|
|
2
∆ = S
,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd
11 S22
- S21 S
04/04/2003
12
Loading...