NEC NE662M16 Technical data

查询NE662M16供应商

NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH: fT = 25 GHz

• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz

• NEW LOW PROFILE M16 PACKAGE:

• Flat Lead Style with a height of just 0.50mm

DESCRIPTION

The NE662M16 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.

NE662M16

M16

NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE662M16

EIAJ1 REGISTERED NUMBER 2SC5704

PACKAGE OUTLINE M16

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 200
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 200

DC

hFE Forward Current Gain2 at VCE = 2 V, IC = 5 mA 50 70 100

fT Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz GHz 20 25

MSG Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 20

2

|S21E|

RF

NF Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT dB 1.1 1.5

P1dB Output Power at 1 dB compression point at

IP3 Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz 22
Cre Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF 0.14 0.24

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 14 17

VCE = 2 V, IC = 20 mA, f = 2 GHz dBm 11

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

4. MSG =

S21
S12

NE662M16

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

VCBO Collector to Base Voltage V 15
VCEO Collector to Emitter Voltage V 3.3
VEBO Emitter to Base Voltage V 1.5

IC Collector Current mA 35

T Total Power Dissipation mW 115

P
T

J Junction Temperature °C 150

TSTG Storage Temperature °C -65 to +150

Note:

1. Operation in excess of any one of these parameters may result
in permanent damage.

ORDERING INFORMATION

PART NUMBER QUANTITY PACKAGING

NE662M16-T3 10 kpcs/reel Pin 1 (Collector), Pin 6 (Emitter)

face the perforation side on the
tape.

OUTLINE DIMENSIONS

PACKAGE OUTLINE M16

1.0±0.05

0.8

123

0.40.4

-0.05

+0.07

0.8

1.2

0.5±0.05

PIN CONNECTIONS

1. Collector

2. Emitter

3. Emitter

zC

(Units in mm)

+0.07

-0.05

654

4. Base

5. Emitter

6. Emitter

0.15±0.05

-0.05

+0.1

0.125

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE662M16

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

(mW)

tot

300

250

200

150
115

100

50

Mounted on Glass Epoxy Board
(1.08 cm

Total Power Dissipation, P

25 50 75 100 125 150

0

Ambient Temperature, TA (°C)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

35

VCE = 2 V

30

25

20

15

10

Collector Current, Ic (mA)

5

0

0.40.2 0.6 0.8 1.0

Base to Emitter Voltage, VBE (V)

2

× 1.0 mm (t) )

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

(pF)

re

0.20

0.16

0.12

0.08

0.04

f = 1 MHz

Reverse Transfer Capacitance, C

0246810

Collector to Base Voltage, VCB (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

40

µ

35
30
25
20
15
10

Collector Current, Ic (mA)

5

012

500 A

450
400
350
300
250
200

150
100

IB = 50

3

Collector to Emitter Voltage, VCE (V)

µ

A

µ

A

µ

A

µ

A

µ

A

µ

A

µ

A

µ

A

A

µ

4

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

FE

100

DC Current Gain, h

10

Collector Current, lC (mA)

VCE = 2 V

10.1 10 100

COLLECTOR CURRENT

30

VCE = 2 V
f = 2 GHz

25

20

(GHz)

T

15

10

Gain Bandwdth, f

5

0

Collector Current, IC (mA)

GAIN BANDWIDTH vs.

101 100