NEC NE661M04-T2, NE661M04 Datasheet

DATA SHEET

NPN SILICON RF TRANSISTOR

NE661M04

NPN SILICON RF TRANSISTOR FOR LOW CURRENT,

LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

• Low noise and high gain with low collector current

• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA

• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

•fT = 25 GHz technology

• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number Quantity Packaging Style
NE661M04 Loose product (50 pcs)
NE661M04-T2 Taping product (3 kpcs/reel)

Remark

To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipat i on
Junction Temperature T
Storage Temperature T

A

= +25°C (free air)

T

Note

THERMAL RESISTANCE

Item Symbol Value Unit

• 8 mm wide emboss taping

• 1 pin (emitter), 2 pin (collector) feed hole direction

CBO

CEO

EBO

C

Note

tot

P

j

stg

15 V

3.3 V

1.5 V
12 mA
39 mW

150 °C

–65 to +150 °C

Junction to Case Resis tance R
Junction to Ambient Resistance R

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14909EJ1V0DS00 (1st edition)
Date Published June 2000 N CP(K)
Printed in Japan

th j-c

th j-a

240 °C/W
650 °C/W

©

2000

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Condi tions MIN. TYP. MAX. Unit

DC characteristic s

FE

h

re

C

|

S

MSG

P

OIP

CBO

EBO

21e

VCB = 5 V, IE = 0 – – 100 nA
VEB = 1 V, IC = 0 – – 100 nA

Note 1

VCE = 2 V, IC = 5 mA 50 70 100 –

Note 2

VCB = 2 V, IE = 0, f = 1 MHz – 0.08 0.12 pF

T

VCE = 3 V, IC = 10 mA, f = 2 GHz 20 25 – GHz

2

|

VCE = 2 V, IC = 5 mA, f = 2 GHz 14 17 – dB

Note 3

VCE = 2 V, IC = 5 mA, f = 2 GHz – 22 – dB
VCE = 2 V, IC = 5 mA

-1

VCE = 2 V, IC = 5 mA

3

Note 4

, f = 2 GHz

Note 4

, f = 2 GHz

Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Reverse Transfer Capacitance
Gain Bandwidth Product f
Noise Figure NF VCE = 2 V, IC = 2 mA, f = 2 GHz, ZS = Z
Insertion Power Gain
Maximum Stable Power Gain
Output Power at 1 dB

Compression Point
Output Power at Third Order

Intercept Point

NE661M04

opt

–1.21.5dB

–5–dBm

–15– –

Notes 1.

Pulse measurement PW ≤ 350
Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when

2.

the emitter is connected to the guard pin

S
MSG =

3.

S

Collector current when P

4.

21
12

hFE CLASSIFICATION

Rank FB

Marking T78

FE

h

-1

50 to 100

s, Duty cycle ≤ 2%

µ

is output

2

Data Sheet P14909EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25°C)

Thermal/DC Characteristics

Total Power Dissipation vs.
Ambient Temperature, Case Temperature

250

200

(mW)

T

150

PT-TA: Free air

T-TA

:

Mounted on ceramic board

P

(15 mm × 15 mm, t = 0.6 mm)

T-TC

: When case temperature

P

is specified

50

40

(mA)

C

30

NE661M04

Collector Current vs. DC Base Voltage

VCE = 2 V

100

50

20

10

Collector Current I

Total Power Dissipation P

0

0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient Temperature TA (°C), Case Temperature TC (°C)

Collector Current vs. Collector to Emitter Voltage

25

20

(mA)

C

15

10

5

Collector Current I

300 A

µ
µ

280 A

µ

260 A

µ

240 A

µ

220 A

µ

200 A

µ

180 A

µ

160 A

µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ
µ

60 A

µ

40 A

IB = 20 A

200
100

FE

10

µ

DC Current Gain h

DC Base Voltage VBE (V)

DC Current Gain vs. Collector Current

1

012345

CE

Collector to Emitter Voltage V

(V)

0.001

0.01 0.1 1 10 100
Collector Current I

C

(mA)

VCE = 2 V

Capacitance/fT Characteristics

Reverse Transfer Capacitance vs. Collector to Base Voltage

0.30

0.25

0.20

0.15

0.10

0.05

Reverse Transfer Capacitance Cre (pF)

0 1.0 2.0 3.0 4.0

Collector to Base Voltage VCB (V)

f = 1 MHz

5.0

Data Sheet P14909EJ1V0DS00

Gain Bandwidth Product vs. Collector Current

30

25

20

15

10

5

Gain Bandwidth Product fT (GHz)

0

1

10 100

Collector Current IC (mA)

VCE = 3 V
f = 2 GHz

3

Gain Characteristics

Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency

40
35
30

(dB)

2

|

25

21e

20
15
10

5

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0

0.1 1.0 10.0

MSG

2

|S

21e

|

Frequency f (GHz)

NE661M04

VCE = 2 V
IC = 5 mA

MAG

Insertion Power Gain, Maximum Stable Power Gain
vs. Collector Current

30

MSG

(dB)

2

|

21e

|S

25

20

15

10

5

Insertion Power Gain

Maximum Stable Power Gain MSG (dB)

0

1 10 100 1 10 100

Collector Current IC (mA)

Output Characteristics

Output Power, Collector Current vs. Input Power

10

f = 1 GHz
VCE = 2 V

5

(dBm)

out

0

Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current

(dB)

2

|

21e

30

25

20

15

MSG

MAG

2

|S

21e

|

f = 1 GHz

CE

= 2 V

V

2

|S

21e

|

f = 2 GHz
VCE = 2 V

10

5

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0

Collector Current I

C

(mA)

Output Power, Collector Current vs. Input Power

25

P

out

20

(mA)

C

15

10

(dBm)

out

5

0

f = 2 GHz
VCE = 2 V

25

P

out

20

(mA)

C

15

–5

Output Power P

–10

–15

–30 –25 –20 –15 –10 –5

Input Power Pin (dBm)

4

10

I

C

5

Collector Current I

0

Data Sheet P14909EJ1V0DS00

–5

Output Power P

–10

–15

–30 –25 –20 –15 –10 –5

Input Power P

in

(dBm)

10

I

C

Collector Current I

5

0