NEC NE651R479A-T1, NE651R479A Datasheet

DATA SHEET

©

N-CHANNEL GaAs HJ-FET

NE651R479A

0.4 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear
gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• GaAs HJ-FET structure

• High output power : P

out

= +27.0 dBm TYP. @ VDS = 3.5 V, I

out

P

= +27.0 dBm TYP. @ VDS = 3.5 V, I

out

P

= +29.5 dBm TYP. @ VDS = 5.0 V, I

• High linear gain : GL = 14.0 dB TYP. @ VDS = 3.5 V, I

GL = 12.0 dB TYP. @ VDS = 3.5 V, I
GL = 12.0 dB TYP. @ VDS = 5.0 V, I

• High power added efficiency : 60 % TYP. @ VDS = 3.5 V, I

60 % TYP. @ VDS = 3.5 V, I
58 % TYP. @ VDS = 5.0 V, I

Dset

= 50 mA, f = 900 MHz, Pin = +13 dBm

Dset

= 50 mA, f = 1.9 GHz, Pin = +15 dBm

Dset

= 50 mA, f = 1.9 GHz, Pin = +15 dBm

Dset

= 50 mA, f = 900 MHz, Pin = +13 dBm

Dset

= 50 mA, f = 1.9 GHz, Pin = +15 dBm

Dset

= 50 mA, f = 1.9 GHz, Pin = +15 dBm

Dset

= 50 mA, f = 900 MHz, Pin = 0 dBm

Dset

= 50 mA, f = 1.9 GHz, Pin = 0 dBm

Dset

= 50 mA, f = 1.9 GHz, Pin = 0 dBm

ORDERING INFORMATION

Part Number Package Supplying Form

NE651R479A-T1 79A • 12 mm wide embossed taping

• Qty 1 kpcs/reel

Remark

Document No. P13670EJ2V0DS00 (2nd edition)
Date Published June 2000 NS CP(K)
Printed in Japan

To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE651R479A).

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

The mark

••••

shows major revised points.

1998, 2000

ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

NE651R479A

Drain to Source Voltage V
Gate to Source Voltage V
Drain Current I
Gate Forward Current I
Gate Reverse Current I
Total Power Dissipation P
Channel Temperature T
Storage Temperature T

DS

GSO

D

GF

GR

tot

ch

stg

8V

−

4V

1.0 A
10 mA
10 mA

2.5 W

150

−

65 to +150

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Drain to Source Voltage V

DS

Gain Compression Gcomp
Channel Temperature T

Recommended maximum Gain Compression is 3.0 dB at V

Note

ch

DS

> 4.2 V

ELECTRICAL CHARACTERISTICS

A

(T

= +25 °C, unless otherwise specified, using NEC standard test fixture.)

°

C

°

C

−

−−

−−

3.5 5.5 V

Note

5.0
+110

dB

°

C

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Saturated Drain Current I
Pinch-off Voltage V
Gate to Drain Break Down Voltage BV
Thermal Resistance R
Output Power P
Drain Current I
Power Added Efficiency
Linear Gain

Notes 1.

Note 1

in

= 0 dBm

P
DC performance is 100 % testing. RF performance is testing several samples per wafer.

2.

η

Wafer rejection criteria for standard devices is 1 reject for several samples.

DSS

VDS = 2.5 V, VGS = 0 V

p

VDS = 2.5 V, ID = 14 mA

gdIgd

= 14 mA 12

th

Channel to Case

out

f = 1.9 GHz, VDS = 3.5 V, 26.0 27.0

D

Pin = +15 dBm, Rg = 1 kΩ,

addIDset

L

G

= 50 mA (RF OFF) 52 60

Note 2

−

−

2.0

0.7

−−

−−

−

−

−

30 50

220

12.0

−

0.4 V

°

C/W

−

−

dBm

mA

−

−

dB

A

V

%

2

Data Sheet P13670EJ2V0DS00

TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)

A

(T

= +25 °C, unless otherwise specified, using NEC standard test fixture.)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

NE651R479A

Output Power P
Drain Current I
Power Added Efficiency

Note

Linear Gain

Note

in

= 0 dBm

P

out

f = 900 MHz, VDS = 3.5 V,

D

Pin = +13 dBm, Rg = 1 kΩ,

η

addIDset

L

G

= 50 mA (RF OFF)

TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)

A

(T

= +25 °C, unless otherwise specified, using NEC standard test fixture.)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Output Power P
Drain Current I
Power Added Efficiency

Note

Linear Gain

Note

in

= 0 dBm

P

out

f = 1.9 GHz, VDS = 5.0 V,

D

Pin = +15 dBm, Rg = 1 kΩ,

η

addIDset

L

G

= 50 mA (RF OFF)

TYPICAL CHARACTERISTICS (TA = +25 °°°°C)

−

−

−

−

−

−

−

−

27.0
230

60

14.0

29.5
350

58

12.0

−

−

−

−

−

−

−

−

dBm

mA

%

dB

dBm

mA

%

dB

OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER

30

VDS = 3.5 V
I

Dset

= 50 mA (RF OFF)

R

g

= 1 kΩ, f = 1.9 GHz

25

(dBm)

out

20

15

Output Power P

10

5

Remark

The graph indicates nominal characteristics.

P

out

Input Power Pin (dBm)

500

400

(mA)

D

300

I

D

200

Drain Current I

100

0

2520151050–5

Data Sheet P13670EJ2V0DS00

3