NEC NE6510379A-T1, NE6510379A Datasheet
PRELIMINARY DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510379A
3 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear
gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET Structure
• High Output Power :
PO = +35 dBm typ. @VDS = 3.5 V, I
PO = +32.5 dBm typ. @VDS = 3.5 V, I
• High Linear Gain : GL = 13 dB typ. @VDS = 3.5 V, I
GL = 8 dB typ. @VDS = 3.5 V, I
• High Power Added Efficiency: 58% typ. @VDS = 3.5 V, I
52% typ. @VDS = 3.5 V, I
Dset
Dset
Dset
= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
Dset
= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
Dset
= 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty
Dset
= 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty
= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
ORDERING INFORMATION (PLAN)
Part Number Package Supplying Form
NE6510379A-T1 79A 12 mm tape width, 1 kpcs / reel
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE6510379A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Symbol Ratings Unit
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current I
Gate Forward Current I
Gate Reverse Current I
Total Power Dissipat i on P
Channel Temperature T
Storage Temperature T
DS
GSO
D
GF
GR
stg
6V
–4 V
4.2 A
38 mA
38 mA
T
ch
18 W
150 °C
–65 to +150 °C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
Document No. P13677EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
The information in this document is subject to change without notice.
1998©
RECOMMENDED OPERATING LIMITS
Characteristics Symbol Test Conditions MIN. TYP. MAX. Uni t
NE6510379A
Drain to Source Voltage V
DS
3.5 4.2 V
Operating Duty Cycle – Pulse width = 0.577 ms 1/3 –
Gain Compression Gcomp 5.0 dB
Channel Temperature T
ch
+110 °C
ELECTRICAL CHARACTERISTICS
(TA = 25°C, Unless otherwise specified, using NEC standard test fixture.
All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Uni t
BV
η
DSS
G
add
VDS = 2.5 V, VGS = 0 V 3.7 A
p
VDS = 2.5 V, ID = 21 mA –2.0 –0.4 V
gd
Igd = 21 mA 11 V
th
Channel to Case 4 7 °C/W
O
f = 1.9 GHz, VDS = 3.5 V
D
Pin = +26 dBm, Rg = 100 Ω
Dset
= 200 mA (RF OFF)
I
Note 2
L
31.5 32.5 dBm
760 mA
44 52 %
8.0 dB
Saturated Drain Current I
Pinch-off Voltage V
Gate to Drain Break Down
Voltage
Thermal Resistance R
Output Power P
Drain Current I
Power Added Efficiency
Linear Gain
Note 1
Notes 1.
Pin = 0 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
2.
Wafer rejection criteria for standard devices is 1 reject for several samples.
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(TA = 25°C, Unless otherwise specified, using NEC standard test fixture.
All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Uni t
Output Power P
Drain Current I
Power Added Efficiency
Linear Gain
Note
Note
Pin = 0 dBm
O
f = 900 MHz, VDS = 3.5 V
D
add
η
G
Pin = +24 dBm, Rg = 100 Ω
Dset
= 200 mA (RF OFF)
I
L
35.0 dBm
1.40 A
58 %
13.0 dB
Preliminary Data Sheet2
NE6510379A
NE6510379A S-PARAMETERS TEST CONDITIONS: VDS = 3.5 V, I
11
S
21
S
Dset
= 200 mA (Preliminary Data)
12
S
22
S
freq. (MHz) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.)
600 0.958 178.7 1.601 91.9 0.017 23.4 0.848 177.3
700 0.956 178.1 1.374 91.8 0.017 26.2 0.847 176.6
800 0.954 177.1 1.210 90.7 0.017 29.7 0.845 176.1
900 0.956 176.0 1.087 90.8 0.017 33.6 0.846 175.3
1000 0.953 175.3 0.966 89.9 0.018 36.6 0.847 174.6
1100 0.952 174.4 0.869 89.7 0.018 41.0 0.848 173.8
1200 0.951 173.9 0.818 89.5 0.018 43.9 0.849 172.9
1300 0.949 173.2 0.747 88.9 0.019 45.9 0.848 172.1
1400 0.949 172.2 0.694 89.7 0.020 47.4 0.846 171.3
1500 0.952 170.6 0.656 90.0 0.020 50.2 0.846 170.4
1600 0.954 169.4 0.625 88.9 0.020 53.1 0.844 169.6
1700 0.945 168.3 0.584 90.7 0.021 56.1 0.844 168.5
1800 0.947 166.9 0.595 89.0 0.022 57.9 0.844 167.4
1900 0.949 165.0 0.570 86.1 0.022 60.3 0.846 166.1
2000 0.946 163.5 0.515 86.3 0.022 61.6 0.846 164.9
2100 0.947 161.2 0.505 85.2 0.022 64.2 0.846 163.7
2200 0.949 160.1 0.479 92.7 0.023 67.0 0.842 162.1
Preliminary Data Sheet 3
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