NEC NE6510179A-T1, NE6510179A Datasheet

DATA SHEET

N-CHANNEL GaAs HJ-FET

NE6510179A

1 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear
gain, high efficiency and excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• GaAs HJ-FET structure

• High output power : P

out

= +31.5 dBm TYP. @VDS = 3.5 V, I

out

P

= +32.5 dBm TYP. @VDS = 3.5 V, I

out

P

= +35.0 dBm TYP. @VDS = 5.0 V, I

• High linear gain : GL = 15 dB TYP. @VDS = 3.5 V, I

GL = 10 dB TYP. @VDS = 3.5 V, I
GL = 10 dB TYP. @VDS = 5.0 V, I

• High power added efficiency : 70% TYP. @VDS = 3.5 V, I

58% TYP. @VDS = 3.5 V, I
56% TYP. @VDS = 5.0 V, I

Dset

= 200 mA, f = 900 MHz, Pin = +20 dBm

Dset

= 200 mA, f = 1 900 MHz, Pin = +25 dBm

Dset

= 200 mA, f = 1 900 MHz, Pin = +25 dBm

Dset

= 200 mA, f = 900 MHz, Pin = +20 dBm

Dset

= 200 mA, f = 1 900 MHz, Pin = +25 dBm

Dset

= 200 mA, f = 1 900 MHz, Pin = +25 dBm

Dset

= 200 mA, f = 900 MHz, Pin = 0 dBm

Dset

= 200 mA, f = 1 900 MHz, Pin = 0 dBm

Dset

= 200 mA, f = 1 900 MHz, Pin = 0 dBm

ORDERING INFORMATION

Part Number Package Supplying Form

NE6510179A-T1 79A

Remark

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

Document No. P13496EJ4V0DS00 (4th edition)
Date Published August 2000 N CP(K)
Printed in Japan

To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE6510179A).

device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

•

12 mm wide embossed taping

•

Qty 1 kpcs/reel

The mark shows major revised points.

©

1998, 2000

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

Drain to Source Voltage V
Gate to Source Voltage V
Drain Current I
Gate Forward Current I
Gate Reverse Current I
Total Power Dissipat i on P
Channel Temperature T
Storage Temperature T

DS

GSO

D

GF

GR

tot

ch

stg

8V

–4 V

2.8 A
25 mA
25 mA
15 W

150 °C

–65 to +150 °C

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Condition MIN. TYP. MAX. Unit

NE6510179A

Drain to Source Voltage V

DS

Gain Compression Gcomp
Channel Temperature T

Recommended maximum Gain Compression is 3.0 dB at V

Note

ch

DS

> 4.2 V

ELECTRICAL CHARACTERISTICS

(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

BV

η

DSS

add

G

VDS = 2.5 V, VGS = 0 V

p

VDS = 2.5 V, ID = 14 mA –2.0

gd

Igd = 14 mA 12

th

Channel to Case

out

D

f = 1.9 GHz, VDS = 3.5 V,

in

= +25 dBm, Rg = 100 Ω,

P

Dset

= 200 mA (RF OFF)

I

Note 2

L

Saturated Drain Current I
Pinch-off Voltage V
Gate to Drain Break Down

Voltage
Thermal Resistance R
Output Power P
Drain Current I
Power Added Efficiency
Linear Gain

Note 1

−

3.5 5.5 V

−−

−−

−

2.4

−

−−

−

58°C/W

31.5 32.5

−

0.72

50 58

−

10.0

Note

5.0
+110 °C

−

–0.4 V

−

dBm

−

−

−

dB

A

V

A

%

dB

Notes 1.

2

in

= 0 dBm

P
DC performance is 100% testing. RF performance is testing several samples per wafer.

2.

Wafer rejection criteria for standard devices is 1 reject for several samples.

Data Sheet P13496EJ4V0DS00

TYPICAL RF PERFORMANCE FOR REFERENCE

(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

NE6510179A

Output Power P
Drain Current I
Power Added Efficiency
Linear Gain

Note

Note

in

= 0 dBm

P

out

D

η

add

G

f = 900 MHz, VDS = 3.5 V,

in

= +20 dBm, Rg = 100 Ω,

P

Dset

= 200 mA (RF OFF)

I

L

TYPICAL RF PERFORMANCE FOR REFERENCE

(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Output Power P
Drain Current I
Power Added Efficiency
Linear Gain

Note

Note

in

= 0 dBm

P

out

D

η

add

G

f = 1.9 GHz, VDS = 5.0 V,

in

= +25 dBm, Rg = 100 Ω,

P

Dset

= 200 mA (RF OFF)

I

L

TYPICAL CHARACTERISTICS (TA = +25°°°°C)

−

−

−

−

−

−

−

−

31.5

0.53
70

15.0

35.0

1.2
56

10.0

−

−

−

−

−

−

−

−

dBm

A

%

dB

dBm

A

%

dB

(dBm)

out

Output Power P

Remark

OUTPUT POWER, DRAIN CURRENT AND GATE CURRENT vs. INPUT POWER

35

VDS = 3.5 V

Dset

= 200 mA (RF OFF)

I

g

= 100 Ω

R
f = 1.9 GHz

30

P

out

25

20

15

10

Input Power Pin (dBm)

I

D

I

G

The graph indicates nominal characteristics.

8

6

4

2

0

–2

302520151050

1 500

1 000

(mA)

G

Gate Current I

500

0

(mA)

D

Drain Current I

Data Sheet P13496EJ4V0DS00

3