NEC NE650R479A-T1, NE650R479A Datasheet

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE650R479A

0.4 W L, S-BAND POWER GaAs MES FET

DESCRIPTION

The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• High Output Power : P

• High Linear Gain : 14 dB typ.

• High Power Added Efficiency: 45% typ. @VDS = 6 V, I

O (1 dB)

= +26 dBm typ.

Dset

= 100 mA, f = 1.9 GHz

ORDERING INFORMATION (PLAN)

Part Number Package Supplying Form

NE650R479A-T1 79A 12 mm tape width, 1 kpcs / reel

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE650R479A)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit Drain to Source Voltage V Gate to Source Voltage V Drain Current I Gate Forward Current I Gate Reverse Current I Total Power Dissipat i on P Channel Temperature T Storage Temperature T

GSO

stg

15 V –7 V

0.6 A 12 mA 12 mA

2.5 W

150 °C

–65 to +150 °C

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

Document No. P13671EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan

The information in this document is subject to change without notice.

1998©

RECOMMENDED OPERATION LIMITS

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

NE650R479A

Drain to Source Voltage V

6.0 6.0 V Gain Compression Gcomp 3.0 dB Channel Temperature T

+125 °C

ELECTRICAL CHARACTERISTICS

(TA = 25°C, Unless otherwise specified, using NEC standard test fixture.)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

O (1 dB)

DSS

add

VDS = 2.5 V, VGS = 0 V 0.35 A

VDS = 2.5 V, ID = 2 mA –2.5 –0.5 V

Igd = 2 mA 13 V

Channel to Case 30 50 °C/W f = 1.9 GHz, VDS = 6.0 V

26.0 dBm

Rg = 30 Ω

Dset

= 100 mA (RF OFF)

Note 2

140 mA

45 %

13.0 14.0 dB

Saturated Drain Current I Pinch-off Voltage V Gate to Drain Break Down

Voltage Thermal Resistance R Output Power at 1 dB Gain

Compression Point Drain Current I Power Added Efficiency Linear Gain

Note 1

Notes 1.

Pin = 0 dBm DC performance is 100% testing. RF performance is testing several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

Preliminary Data Sheet2

NE650R479A

NE650R479A S-PARAMETERS TEST CONDITIONS: VDS = 6.0 V, I

Dset

= 100 mA (Preliminary Data)

freq. (MHz) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.)

1400 0.850 –129.3 5.286 120.2 0.062 42.6 0.293 –132.5 1500 0.849 –134.0 5.066 119.1 0.063 41.6 0.294 –136.0 1600 0.840 –137.0 4.837 118.4 0.063 41.5 0.294 –138.1 1700 0.837 –141.4 4.634 116.8 0.065 41.5 0.299 –140.6 1800 0.833 –145.9 4.519 115.0 0.067 40.9 0.298 –143.4 1900 0.826 –150.0 4.404 114.3 0.068 39.4 0.296 –146.1 2000 0.817 –153.3 4.159 112.7 0.068 37.8 0.299 –149.2 2100 0.817 –157.9 4.073 111.3 0.067 37.4 0.296 –152.8 2200 0.808 –161.5 3.926 109.9 0.066 37.9 0.294 –155.6 2300 0.810 –167.1 3.795 108.1 0.066 38.8 0.290 –160.2 2400 0.810 –171.9 3.687 105.3 0.067 39.1 0.289 –164.1 2500 0.805 –176.6 3.545 104.0 0.069 38.3 0.286 –168.7 2600 0.806 179.1 3.306 102.6 0.069 36.5 0.285 –171.9 2700 0.806 175.8 3.216 102.0 0.067 35.7 0.285 –175.5 2800 0.809 172.0 3.129 101.9 0.066 35.8 0.286 –179.3 2900 0.816 167.8 3.023 101.4 0.065 36.3 0.291 176.6 3000 0.817 164.2 2.956 101.3 0.063 35.9 0.298 172.4

Preliminary Data Sheet 3

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