NEC NE650R279A-T1, NE650R279A Datasheet

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE650R279A

0.2 W L, S-BAND POWER GaAs MES FET

DESCRIPTION

The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• High Output Power : P

• High Linear Gain : 16 dB typ.

• High Power Added Efficiency: 45% typ. @VDS = 6 V, I

O (1 dB)

= +23 dBm typ.

Dset

= 50 mA, f = 1.9 GHz

ORDERING INFORMATION (PLAN)

Part Number Package Supplying Form

NE650R279A-T1 79A 12 mm tape width, 1 kpcs / reel

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE650R279A)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit Drain to Source Voltage V Gate to Source Voltage V Drain Current I Gate Forward Current I Gate Reverse Current I Total Power Dissipat i on P Channel Temperature T Storage Temperature T

GSO

stg

15 V –7 V

0.3 A 8mA 8mA

2.1 W

150 °C

–65 to +150 °C

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

Document No. P13678EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan

The information in this document is subject to change without notice.

1998©

RECOMMENDED OPERATING LIMITS

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

NE650R279A

Drain to Source Voltage V

6.0 6.0 V Gain Compression Gcomp 3.0 dB Channel Temperature T

+125 °C

ELECTRICAL CHARACTERISTICS

(TA = 25°C, Unless otherwise specified, using NEC standard test fixture.)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

O (1 dB)

DSS

add

VDS = 2.5 V, VGS = 0 V 150 mA

VDS = 2.5 V, ID = 1 mA –2.5 –0.5 V

Igd = 1 mA 13 V

Channel to Case 40 60 °C/W f = 1.9 GHz, VDS = 6.0 V

= 30 Ω

Dset

= 50 mA (RF OFF)

Note 2

23.0 dBm

72 mA 45 %

15.0 16.0 dB

Saturated Drain Current I Pinch-off Voltage V Gate to Drain Break Down

Voltage Thermal Resistance R Output Power at 1 dB Gain

Compression Point Drain Current I Power Added Efficiency Linear Gain

Note 1

Notes 1.

Pin = 0 dBm DC performance is 100% testing. RF performance is testing several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

Preliminary Data Sheet2

NE650R279A

NE650R279A S-PARAMETERS TEST CONDITIONS: VDS = 6.0 V, I

Dset

= 50 mA (Preliminary Data)

freq. (MHz) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.)

1400 0.865 –103.4 5.788 133.2 0.070 53.2 0.403 –73.5 1500 0.861 –108.0 5.593 131.9 0.072 51.5 0.397 –76.7 1600 0.850 –112.1 5.439 130.8 0.073 51.1 0.392 –79.2 1700 0.839 –116.0 5.182 129.1 0.075 50.9 0.387 –82.1 1800 0.833 –120.5 5.026 129.1 0.078 50.6 0.382 –84.9 1900 0.827 –124.9 4.992 128.4 0.081 49.2 0.376 –87.5 2000 0.817 –129.4 4.888 125.6 0.082 47.2 0.368 –90.2 2100 0.809 –133.1 4.739 124.9 0.082 45.8 0.360 –93.0 2200 0.806 –137.7 4.628 123.6 0.081 45.6 0.349 –95.7 2300 0.795 –143.0 4.518 121.8 0.081 46.2 0.336 –98.5 2400 0.789 –148.3 4.403 119.9 0.083 46.5 0.325 –101.6 2500 0.781 –153.4 4.383 118.2 0.086 46.0 0.311 –104.9 2600 0.778 –157.5 4.348 116.6 0.087 44.3 0.300 –107.6 2700 0.779 –162.9 4.065 115.8 0.087 42.7 0.288 –110.5 2800 0.778 –167.0 3.910 113.8 0.085 42.2 0.276 –113.5 2900 0.778 –172.1 3.763 113.1 0.084 42.1 0.264 –117.3 3000 0.781 –176.7 3.632 112.8 0.083 41.4 0.256 –121.0

Preliminary Data Sheet 3

+ 5 hidden pages