NEC MC-4516CB646 DATA SHEET

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4516CB646

16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-4516CB646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of
128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface­mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 64 bits organization

• Clock frequency and access time from CLK

Part number /CAS latency Clock frequency Access time from CLK

(MAX.) (MAX.)

MC-4516CB646EF-A80 CL = 3 125 MHz 6 ns

CL = 2 100 MHz 6 ns

MC-4516CB646EF-A10 CL = 3 100 MHz 6 ns

CL = 2 77 MHz 7 ns

MC-4516CB646PF-A80 CL = 3 125 MHz 6 ns

★

CL = 2 100 MHz 6 ns

MC-4516CB646PF-A10 CL = 3 100 MHz 6 ns

★

CL = 2 77 MHz 7 ns

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and full page)

• Programmable wrap sequence (sequential / interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. M14334EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan

The mark

••••

shows major revised points.

©

1999

Ordering Information

MC-4516CB646

Part number Clock frequency

MHz (MAX.)
MC-4516CB646EF-A80 125 MHz 168-pin Dual In-line Memory Module 8 pieces of µPD45128841G5 (Rev. E)
MC-4516CB646EF-A10 100 MHz (Socket Type) (10.16 m m (400) TSOP (II))
MC-4516CB646PF-A80 125 MHz Edge connector : Gold plated 8 pieces of µPD45128841G5 (Rev. P)

★

★

MC-4516CB646PF-A10 100 MHz 34.93 mm height (10.16 mm (400) TSOP (II))

Package Mounted devices

2

Data Sheet M14334EJ2V0DS00

Pin Configuration

★

168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)

MC-4516CB646

100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124

125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168

85
86
87
88
89
90
91
92
93
94

95
96
97
98
99

SS

V
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39

DQ40
V

SS

DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
NC
NC
V

SS

NC
NC
Vcc
/CAS
DQMB4
DQMB5
NC
/RAS
V

SS

A1
A3
A5
A7
A9
BA0

(A13)
A11
Vcc

CLK1
NC
V

SS

CKE0
NC
DQMB6
DQMB7
NC
Vcc
NC
NC
NC
NC
V

SS

DQ48
DQ49
DQ50
DQ51
Vcc
DQ52
NC
NC
NC
V

SS

DQ53
DQ54
DQ55

SS

V
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
V

SS

CLK3
NC
SA0
SA1
SA2
Vcc

DQMB0
DQMB1

BA1

DQMB2
DQMB3

V
DQ0
DQ1
DQ2
DQ3

Vcc
DQ4
DQ5
DQ6
DQ7

DQ8

V

DQ9

DQ10
DQ11
DQ12
DQ13

Vcc

DQ14
DQ15

NC
NC
V
NC
NC

Vcc

/WE

/CS0

NC
V

A10

(A12)

Vcc

Vcc

CLK0

V
NC

/CS2

NC

Vcc

NC
NC
NC
NC

V
DQ16
DQ17
DQ18
DQ19

Vcc

DQ20

NC

NC

NC

V
DQ21
DQ22
DQ23

V
DQ24
DQ25
DQ26
DQ27

Vcc
DQ28
DQ29
DQ30
DQ31

V

CLK2

NC

WP

SDA

SCL

Vcc

SS

SS

SS

SS

A0
A2
A4
A6
A8

SS

SS

SS

SS

SS

1
2
3
4
5
6
7
8
9
10

11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40

41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84

/xxx indica tes active low signal.

A0 - A11 : Address Inputs
[Row: A0 - A11, Column: A0 - A9]

BA0

(A13), BA1 (A12) : SDRAM Bank Select
DQ0 - DQ63 : Data Inputs/Outputs
CLK0 - CLK3 : Clock Input
CKE0 : Clock Enable Input
/CS0, /CS2 : Chip Select Input
/RAS : Row Address Strobe
/CAS : Column Address Strobe
/WE : Write Enable
DQMB0

-

DQMB7 : DQ Mask Enable
SA0 - SA2 : Address Input for EEPROM
SDA : Serial Data I/O for PD
SCL : Clock Input for PD

CC

V

SS

V

: Power Supply

: Ground
WP : Write Protect
NC : No Connection

Data Sheet M14334EJ2V0DS00

3

Block Diagram

/WE

/CS0

DQMB0

DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7

DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0

DQM

MC-4516CB646

/CS2

DQMB2

/WE

/CS

D0

DQ 16
DQ 17
DQ 18
DQ 19
DQ 20
DQ 21
DQ 22
DQ 23

DQMD2/CS /WE

DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0

DQMB1

DQ 8

DQ 9
DQ 10
DQ 11
DQ 12
DQ 13
DQ 14
DQ 15

DQMB4

DQ 32
DQ 33
DQ 34
DQ 35
DQ 36
DQ 37
DQ 38
DQ 39

DQMB5

DQ 40
DQ 41
DQ 42
DQ 43
DQ 44
DQ 45
DQ 46
DQ 47

DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0

DQ 4
DQ 7
DQ 6
DQ 5
DQ 3
DQ 2
DQ 1
DQ 0

DQ 5
DQ 7
DQ 6
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0

DQM

/CS

D1

DQM /CS

D4

DQM

/CS

D5

/WE

/WE

/WE

DQMB3

DQ 24
DQ 25
DQ 26
DQ 27
DQ 28
DQ 29
DQ 30
DQ 31

DQMB6

DQ 48
DQ 49
DQ 50
DQ 51
DQ 52
DQ 53
DQ 54
DQ 55

DQMB7

DQ 56
DQ 57
DQ 58
DQ 59
DQ 60
DQ 61
DQ 62
DQ 63

DQ 4
DQ 7
DQ 6
DQ 5
DQ 3
DQ 2
DQ 1
DQ 0

DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0

DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0

DQM

DQM

DQM

/WE

/CS

D3

/WE

/CS

D6

/CS

/WE

D7

Remarks 1.

4

CLK0

CLK2

CLK1, CLK3

V

V

CC

SS

CLK : D0, D1, D4, D5

3.3 pF

CLK : D2, D3, D6, D7

3.3 pF

10 pF

D0 - D7

C

D0 - D7

The value of all resistors is 10 Ω except WP.

2.

D0 - D7:

µ

PD45128841 (4M words × 8 bits × 4 banks)

Data Sheet M14334EJ2V0DS00

A0 - A11

SCL

BA0

BA1

/RAS

/CAS

CKE0

SERIAL PD

A0

SA1 SA2

SA0

A1 A2

A0 - A11 : D0 - D7

A13 : D0 - D7

A12 : D0 - D7
/RAS : D0 - D7

/CAS : D0 - D7

CKE : D0 - D7

SDA
WP

47 kΩ

MC-4516CB646

Electrical Specifications

• All voltages are referenced to VSS (GND).

µ

• After power up, wait more than 100

device operation is achieved.

Absolute Maximum Ratings

Parameter Symbol Condition Rating Unit
Voltage on power supply pin relative to GND V
Voltage on input pin relative to GND V
Short circuit output c urrent I
Power dissipation P
Operating ambient tem perature T
Storage temperature T

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.

s and then, execute power on sequence and CBR (Auto) refresh before proper

CC

T

O

D

A

stg

–0.5 to +4.6 V
–0.5 to +4.6 V

50 mA

8W

0 to +70

–55 to +125

C

°

C

°

Recommended Operating Conditions

Parameter Symbol Condition MIN. TYP. MAX. Unit
Supply voltage V
High level input voltage V
Low level input voltage V
Operating ambient tem perature T

Capacitance (TA = 25

C, f = 1 MHz)

°°°°

Parameter Symbol Test condition MIN. TYP. MAX. Unit
Input capacitance C

Data input/output capaci t ance C

CC

IH

IL

A

I1

I2

C

I3

C

I4

C

I5

C

I/O

3.0 3.3 3.6 V

2.0 VCC + 0.3 V

0.3 +0.8 V

−

A0 - A11, BA0(A13), BA1(A12), /RAS,

070

38 62 pF

°

/CAS, /WE
CLK0, CLK2 24 40
CKE0 32 52
/CS0, /CS2 17 29
DQMB0 - DQMB7 7 13
DQ0 - DQ63 7 13 pF

C

Data Sheet M14334EJ2V0DS00

5

DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)

Parameter Symbol Test condition Grade MIN. MAX. Unit Notes

Operating current I

Precharge standby current in I
power down mode I

★

Precharge standby current in
non power down mode

Active standby current i n I
power down mode I
Active standby current i n I
non power down mode Input signals are changed one time during 30 ns.

CC1

Burst length = 1

RC ≥ tRC(MIN.)

t

CC2

P CKE ≤ V

CC2

PS CKE ≤ V

CC2

I

NCKE

, IO = 0 mA -A10 800

IL(MAX.)

CK = 15

IL(MAX.)

≥ VIH(MIN.)

, t
, t

, t

ns 8 mA

CK =

∞

CK = 15

ns, /CS

Input signals are changed one time during 30

CC2

I

NS CKE ≥ V

IH(MIN.)

CK =

, t

∞

Input signals are stable.

CC3

P CKE ≤ V

CC3

PS CKE ≤ V

CC3

NCKE

CC3

I

NS CKE ≥ V

IL(MAX.)

IL(MAX.)

≥ VIH(MIN.)

IH(MIN.)

CK = 15

, t

CK =

, t

CK = 15

, t

CK =

, t

ns 40 mA

∞

ns, /CS

∞

Input signals are stable.

≥ VIH(MIN.)

≥ VIH(MIN.)

/CAS latency = 2

/CAS latency = 3

,

, 240 mA

MC-4516CB646

-A80 800 mA 1

-A80 800

-A10 800

8

160 mA

ns.

64

32

160

Operating current I

CC4tCK ≥ tCK(MIN.)

/CAS latency = 2

-A80 960 mA 2

(Burst mode) IO = 0 mA -A10 760

/CAS latency = 3

-A80 1,160

-A10 1,000

CBR (Auto) refresh current I

★

CC5tRC ≥ tRC(MIN.)

/CAS latency = 2

-A80 1,840 mA 3

-A10 1,840

★

/CAS latency = 3

-A80 1,840

-A10 1,840
Self refresh current I
Input leakage current I
Output leakage current I

CC6

CKE ≤ 0.2 V16mA

=

I(L)VI

O(L)DOUT

0 to 3.6 V, All other pins not under test = 0 V – 8+ 8µA

is disabled, VO = 0 to 3.6 V–

1.5 + 1.5µA
High level output voltage VOHIO = – 4.0 mA 2.4 V
Low level output voltage VOLIO = + 4.0 mA 0.4 V

Notes 1.

CC1

I

depends on output loading and cycle rates. Specified values are obtained with the output open. In

CC1

addition to this, I

CC4

2

.I

depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, I

CC5

3

.I

is measured on condition that addresses are changed only one time during t

is measured on condition that addresses are changed only one time during t

CC4

is measured on condition that addresses are changed only one time during t

CK (MIN.)

.

CK (MIN.)

CK (MIN.)

.

.

6

Data Sheet M14334EJ2V0DS00

AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)

Test Conditions

★

Parameter Value Unit
AC high level input voltage / low level input voltage 2.4 / 0.4 V
Input timing measurement ref erence level 1.4 V
Transition time (Input rise and fall time) 1 ns
Output timing measurement ref erence level 1.4 V

t

CK

t

CH

2.4 V

CLK

Input

1.4 V

0.4 V

2.4 V

1.4 V

0.4 V

t

SETUPtHOLD

t

AC

t

OH

MC-4516CB646

Notes

t

CL

Output

Data Sheet M14334EJ2V0DS00

7

Synchronous Characteristics

Parameter Symbol -A80 -A 10 Unit Note

Clock cycle time /CAS latency = 3 t

/CAS latency = 2 t

Access time from CLK /CAS latency = 3 t

/CAS latency = 2 t
CLK high level width t
CLK low level width t
Data-out hold time t
Data-out low-impedance tim e t
Data-out high-impedance time /CAS latency = 3 t

/CAS latency = 2 t
Data-in setup time t
Data-in hold time t
Address setup time t
Address hold time t
CKE setup time t
CKE hold time t
CKE setup time (P ower down exit) t
Command (/CS0, /CS2, /RAS, /CAS, /WE,
DQMB0 - DQMB7) setup time
Command (/CS0, /CS2, /RAS, /CAS, /WE,
DQMB0 - DQMB7) hold time

CK3

CK2

AC3

AC2

CH

CL

OH

LZ

HZ3

HZ2

DS

DH

AS

AH

CKS

CKH

CKSP

CMS

t

CMH

t

MC-4516CB646

MIN. MAX. MIN. MAX.

8 (125 MHz) 10 (100 MHz) ns

10 (100 MHz) 13 (77 MHz) ns

66ns1

67ns1
33ns
33ns
33ns1
00ns
3636ns
3637ns
22ns
11ns
22ns
11ns
22ns
11ns
22ns
22ns

11ns

Note 1.

Remark

Output load

Z = 50 Ω

Output

50 pF

These specifications are applied to the monolithic device.

8

Data Sheet M14334EJ2V0DS00

Asynchronous Characteristics

Parameter Symbol -A80 -A10 Unit Note

ACT to REF/ACT comm and peri od (Operat i on) t
REF to REF/ACT command period (Refresh) t
ACT to PRE command period t
PRE to ACT command period t
Delay time ACT to READ/WRITE command t
ACT(one) to ACT(another) command period t
Data-in to PRE command period t
Data-in to ACT(REF) command /CAS latency = 3 t
period (Auto precharge) /CAS latency = 2 t
Mode register set cycle time t
Transition time t
Refresh time (4,096 refres h cycles) t

MIN. MAX. MIN. MAX.

RC

RC1

RAS

RP

RCD

RRD

DPL

DAL3

DAL2

RSC

T

REF

70 70 ns
70 78 ns
48 120,000 50 120,000 ns
20 20 ns
20 20 ns
16 20 ns

810ns

1CLK+20 1CLK+20 ns
1CLK+20 1CLK+20 ns

22CLK

0.5 30 1 30 ns
64 64 ms

MC-4516CB646

Data Sheet M14334EJ2V0DS00

9

MC-4516CB646

Serial PD

Byte No. Function Described Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Notes

0 Defines the number of bytes written into

serial PD memory
1 Total number of bytes of serial PD memory
2 Fundamental mem ory type
3 Number of rows
4 Number of columns
5 Number of banks
6 Data width
7 Data width (continued)
8 Voltage interface
9 CL = 3 Cycle time -A80 80H 1 0 0 0 0 0 0 0 8 ns

-A10 A0H 1 0 1 0 0 0 0 0 10 ns

10 CL = 3 Access tim e -A 80 60H 0 1 1 0 0 0 0 0 6 ns

-A10 60H 0 1 1 0 0 0 0 0 6 ns
11 DIMM configuration type
12 Refresh rate/type
13 SDRAM width
14 Error checking SDRAM width
15 Minimum clock del ay
16 Burst length supported
17 Number of banks on each SDRAM
18 /CAS latency supported
19 /CS latency supported
20 /WE lat ency supported
21 SDRAM module attributes
22 SDRAM device attributes : General
23 CL = 2 Cycle time -A80 A0H 1 0 1 0 0 0 0 0 10 ns

-A10 D0H 1 1 0 1 0 0 0 0 13 ns
24 CL = 2 Access tim e -A 80 60H 0 1 1 0 0 0 0 0 6 ns

-A10 70H 0 1 1 1 0 0 0 0 7 ns

25-26 00H 0 0 0 0 0 0 0 0

RP(MIN.)

-A80 14H 0 0 0 1 0 1 0 0 20 ns27 t

-A10 14H 0 0 0 1 0 1 0 0 20 ns

RRD(MIN.)

28 t

-A80 10H 0 0 0 1 0 0 0 0 16 ns

-A10 14H 0 0 0 1 0 1 0 0 20 ns

RCD(MIN.)

-A80 14H 0 0 0 1 0 1 0 0 20 ns29 t

-A10 14H 0 0 0 1 0 1 0 0 20 ns

RAS(MIN.)

30 t

-A80 30H 0 0 1 1 0 0 0 0 48 ns

-A10 32H 0 0 1 1 0 0 1 0 50 ns
31 Module bank density 20H 0 0 1 0 0 0 0 0 128M bytes

80H 1 0 0 0 0 0 0 0 128 bytes

08H 0 0 0 0 1 0 0 0 256 bytes

04H00000100SDRAM
0CH0000110012 rows
0AH0000101010 columns

01H 0 0 0 0 0 0 0 1 1 bank

40H0100000064 bits

00H000000000

01H00000001LVTTL

00H 0 0 0 0 0 0 0 0 Non-parity

80H10000000Normal

08H00001000×8

00H00000000None

01H000000011 clock
8FH 1 0 0 0 1 1 1 1 1, 2, 4, 8, F

04H 0 0 0 0 0 1 0 0 4 banks

06H000001102, 3

01H000000010

01H000000010

00H00000000
0EH00001110

(1/2)

10

Data Sheet M14334EJ2V0DS00

MC-4516CB646

(2/2)

Byte No. Function Described Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Notes

32 Command and address signal input

setup time

33 Command and address signal input

hold time
34 Data signal input setup time 20H 0 0 1 0 0 0 0 0 2 ns
35 Data signal input hold time 10H 0 0 0 1 0 0 0 0 1 ns

36-61 00H 0 0 0 0 0 0 0 0

62 SPD revision 12H 0 0 0 1 0 0 1 0 1.2
63 Checksum for bytes 0 - 62 -A80 F0H 1 1 1 1 0 0 0 0

-A1056H01010110

64-71 Manufacture’s JEDEC ID code

72 Manufacturing location

73-90 Manufacture’s P/N
91-92 Revision code
93-94 Manufacturing date
95-98 Assembly serial number

99-125 Mfg specif i c

126 Intel specification frequency 64H 0 1 1 0 0 1 0 0 100 MHz
127 Intel specification /CAS -A80 A7H 1 0 1 0 0 1 1 1

latency support -A10 A5H 1 0 1 0 0 1 0 1

20H001000002 ns

10H000100001 ns

Timing Chart

Refer to the

SYNCHRONOUS DRAM MODULE TIMING CHART Information (M13348E)

.

Data Sheet M14334EJ2V0DS00

11

Package Drawing

★

168-PIN DUAL IN-LINE MODULE (SOCKET TYPE)

F1

R2

Y1
Y2

A (AREA B)

Z1

Z2

MC-4516CB646

N

F2

Q

M

R1

M2 (AREA A)

M1 (AREA B)

L

A

J

B

H

K
C

I G

B

S

(OPTIONAL HOLES)

E

U

T

D

A1 (AREA A)

ITEM MILLIMETERS

A

133.35

133.35±0.13

A1

11.43

B

36.83

C

6.35

D

2.0

D1

3.125

D2

54.61

E

2.44

F1
F2

3.18
G 6.35
H

detail of A part

W

V

detail of B part

D2

P

X

D1

1.27 (T.P.)

8.89

I

J 24.495

42.18K

17.78

L

34.93±0.13

M

15.15

M1

19.78

M2

3.0 MAX.

N

1.0

P

R2.0

Q

4.0±0.10

R1
R2

9.53

φ

S 3.0
T

1.27±0.1

4.0 MIN.

U
V 0.2±0.15

1.0±0.05W
X

2.54±0.10
Y1 3.0 MIN.
Y2

2.26

3.0 MIN.Z1
Z2 2.26

M168S-50A110

12

Data Sheet M14334EJ2V0DS00

[MEMO]

MC-4516CB646

Data Sheet M14334EJ2V0DS00

13

[MEMO]

MC-4516CB646

14

Data Sheet M14334EJ2V0DS00

MC-4516CB646

NOTES FOR CMOS DEVICES

1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.

2 HANDLING OF UNUSED INPUT PINS FOR CMOS

Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused

DD

pin should be connected to V
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.

or GND with a resistor, if it is considered to have a possibility of

3 STATUS BEFORE INITIALIZATION OF MOS DEVICES

Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.

Data Sheet M14334EJ2V0DS00

15

MC-4516CB646

CAUTION FOR HANDLING MEMORY MODULES

When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these
components to prevent damaging them.

When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact
with other modules may cause excessive mechanical stress, which may damage the modules.

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.

M7 98. 8