NEC 2SK3357 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK3357
DESCRIPTION
The 2SK3357 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•Super low on-state resistance:
DS(on)1
= 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A)
R
DS(on)2
= 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A)
R
iss
iss
: C
•Low C
= 9800 pF TYP.
•Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Note1
C
= 25°C) P
A
= 25°C) P
Note2
Note2
DSS
GSS(AC)
D(DC)
D(pulse)
I
stg
AS
I
AS
E
±
T
T
ch
–55 to +150 °C
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3357
60 V
20 V
±
75 A
±
300 A
150 W
3.0 W
150 °C
75 A
562 mJ
TO-3P
(TO-3P)
Notes 1.
PW ≤ 10
2.
Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V → 0 V
µ
s, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to Case R
Channel to Ambient R
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14134EJ2V0DS00 (2nd edition)
Date Published May 2000 NS CP(K)
Printed in Japan
th(ch-C)
th(ch-A)
0.83 °C/W
41.7 °C/W
The mark ★ shows major revised points.
©
1999, 2000
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3357
Drain to Source On-state Resi stance R
Gate to Source Cut-off Voltage V
DS(on)1VGS
DS(on)2VGS
R
GS(off)VDS
= 10 V, ID = 38 A4.65.8m
= 4.0 V, ID = 38 A6.18.8m
Ω
Ω
= 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 38 A3872S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DSS
VDS = 60 V, VGS = 0 V10
GSS
VGS = ±20 V, VDS = 0 V
iss
VDS = 10 V, VGS = 0 V, f = 1 MHz 9800 pF
oss
rss
d(on)ID
d(off)
GS
GD
F(S-D)IF
rr
= 38 A, V
r
RG = 10
f
G
ID = 75 A , VDD = 48 V, VGS = 10 V 170 nC
= 75 A, VGS = 0 V0.96V
IF = 75 A, VGS = 0 V, 64 ns
rr
di/dt = 100 A/µs 130 nC
GS(on)
= 10 V, VDD = 30 V, 105 ns
Ω
1500 pF
1350 ns
±
630 pF
500 ns
480 ns
28 nC
46 nC
10
A
µ
A
µ
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
L
V
DD
PG.
RG = 25 Ω
50 Ω
VGS = 20 → 0 V
BV
DSS
I
AS
V
I
D
V
DD
DS
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
IG = 2 mA
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
R
G
PG.
GS
V
0
τ = 1 s
Duty Cycle ≤ 1 %
R
V
DD
τ
µ
GS
V
Wave Form
I
D
Wave Form
V
GS
10 %
0
90 %
I
D
10 %
0
t
d(on)
r
t
on
t
90 %
V
GS
(on)
90 %
I
D
10 %
t
d(off)
t
f
t
off
2
Data Sheet D14134EJ2V0DS00
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
100
80
60
40
20
0
TC - Case Temperature - ˚C
P
T
- Total Power Dissipation - W
0
0
8020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
50
75
100
125
175
150
FORWARD BIAS SAFE OPERATING AREA
1 10 100
I
D
- Drain Current - A
0.1
V
DS
- Drain to Source Voltage - V
1000
100
10
1
100
µs
10
ms
1
ms
PW
=
10
µs
ID(pulse)
I
D(DC)
Power Dissipation Limited
TC = 25˚C
Single Pulse
R
DS(on)
Limited
(at V
GS
= 10 V)
★
TYPICAL CHARACTERISTICS (TA = 25 °C )
2SK3357
1000
100
10
1
0.1
- Transient Thermal Resistance - ˚C/W
th(t)
r
0.01
µ
10
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 m 10 m 100 m 1 10 100 1000
µ
PW - Pulse Width - s
Data Sheet D14134EJ2V0DS00
Single Pulse
R
R
th(ch-A)
th(ch-C)
= 41.7 ˚C/W
= 0.83 ˚C/W
3
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