DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
2SK2858
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK2858 SC-70(SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation P
★
Note
Channel Temperature T
Storage Temperature T
Note
PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
DSS
GSS
D(DC)
D(pulse)
I
ch
stg
±20 V
±0.1 A
±0.4 A
T
150 mW
150 °C
–55 to +150 °C
30 V
PACKAGE DRAWING (Unit : mm)
0.65
2.0 ± 0.2
0.65
0.9 ± 0.1
+0.1
–0
0.3
0.3
2
1
2.1 ± 0.1
1.25 ± 0.1
3
Marking
0 to 1.1
+0.1
0.15
–0.05
+0.1
–0
0.3
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Marking: G24
Drain
Internal
Diode
Source
Electrode
Connection
1.Source
2.Gate
3.Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11706EJ2V0DS00 (2nd edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The mark
★★★★
shows major revised points.
©
1996, 1999
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK2858
Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = 30 V, VGS = 0 V1
GSS
VGS = ±20 V, VDS = 0 V±10
GS(off)VDS
= 3 V, ID = 10 µA 1.0 1.4 1.8 V
A
µ
A
µ
Forward Transfer Admittance | yfs |VDS = 3 V, ID = 10 m A20mS
DS(on)1VGS
Drain to Source On-state Resi stance
R
R
R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
DS(on)2VGS
DS(on)3VGS
iss
oss
rss
d(on)
r
d(off)
f
= 2.5 V, ID = 1 m A815
= 4 V, ID = 10 mA 4 8
= 10 V, ID = 10 mA 3 5
Ω
Ω
Ω
VDS = 3 V9pF
VGS = 0 V12pF
f = 1 MHz 2.1 pF
VDD = 3 V40ns
ID = 10 mA 55 ns
GS(on)
V
= 4 V68ns
Ω,
L
= 300
R
Ω
64 ns
RG = 10
2
Data Sheet D11706EJ2V0DS00
TYPICAL CHARACTERISTICS (TA = 25 °C)
2SK2858
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
1
VDS = 3 V
0.1
0.01
0.001
- Drain Current - A
0.0001
D
I
0.00001
0.000001
1.0
30
60
90
TA - Ambient Temperature -
120
˚C
TRANSFER CHARACTERISTICS
= 125˚C
A
T
75˚C
25˚C
−25˚C
2.0
3.0
4.0 5.0
VGS - Gate to Sorce Voltage - V
150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
200
- Drain Current - mA
D
I
100
0
1000
2
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
V
DS
= 3 V
100
★
10
| - Forward Transfer Admittance - mS
fs
| y
1
GS
V
TA = −25
25˚C
75˚C
125˚C
6
˚C
4
DS
- Drain to Source Voltage - V
V
0.01 0.10.0010.0001
ID - Drain Current - A
= 4 V
3.5 V
3 V
2.5 V
810
1
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
VGS = 2.5 V
15
T
A
= 125
˚C
75
˚C
25
10
−25
˚C
˚C
5
- Drain to Source On-state Resistance - Ω
10
0.0001 0.001 0.1
DS(on)
R
D
- Drain Current - A
I
0.01
15
10
★
5
- Drain to Source On-state Resistance - Ω
0
0.0001 0.1 1
DS(on)
R
Data Sheet D11706EJ2V0DS00
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
VGS = 4 V
T
A
= 125
˚C
75
˚C
25
˚C
−25
˚C
0.010.001
D
- Drain Current - A
I
3
2SK2858
★
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
VGS = 10 V
8
6
4
2
- Drain to Source On-state Resistance - Ω
0
DS(on)
R
100
f = 1 MHz
V
GS
= 0 V
10
- Capacitance - pF
rss
, C
oss
1
, C
iss
C
0.1
T
A
= 125
˚C
75
˚C
25
˚C
−25
˚C
0.010.0010.0001
D
- Drain Current - A
I
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1
VDS - Drain to Source Voltage - V
100.01 0.1 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
ID = 1 mA
10 mA
20
100 mA
★
10
- Drain to Source On-state Resistance - Ω
DS (on)
0
10.1
R
48
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
C
iss
C
oss
100
C
rss
, tf - Swwitchig Time - ns
(off)
V
DD
, tr, td
(on)
td
= 3 V
V
GS(on)
= 4V
R
G
= 10 Ω
10
0.1 1 10
I
D
- Drain Current - A
12 16
t
r
t
f
t
d(on)
t
d(off)
20
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
0.1
0.01
0.001
- Source to Drain Current - A
F
I
0.0001
0.60.4
V
F(S-D)
- Source to Drain Voltage - V
0.8
4
1.0
1.2
Data Sheet D11706EJ2V0DS00
[MEMO]
2SK2858
Data Sheet D11706EJ2V0DS00
5
[MEMO]
2SK2858
6
Data Sheet D11706EJ2V0DS00
[MEMO]
2SK2858
Data Sheet D11706EJ2V0DS00
7
2SK2858
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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M7 98. 8
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