NEC 2SK3355-ZJ, 2SK3355-Z, 2SK3355-S, 2SK3355 Datasheet

DATA SHEET

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

•Super low on-state resistance:

DS(on)1

= 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A)

R

DS(on)2

= 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A)

R

iss

: C

•Low C

•Built-in gate protection diode

= 9800 pF TYP.

MOS FIELD EFFECT TRANSISTOR

2SK3355

★

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3355

2SK3355-S

2SK3355-ZJ

2SK3355-Z

Note

TO-220SMD package is produced only

in Japan.

TO-220AB

TO-262 TO-263

TO-220SMD

(TO-220AB)

Note

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation (T Total Power Dissipation (T Channel Temperature T Storage Temperature T

Single Avalanche Current Single Avalanche Energy

Notes 1.

PW ≤ 10

2.

Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V

Note1

C

= 25°C) P

A

= 25°C) P

Note2

µ

s, Duty cycle ≤ 1 %

DSS

GSS(AC)

D(DC)

D(pulse)

I

stg

AS

I

AS

E

T

ch

THERMAL RESISTANCE

Channel to Case R Channel to Ambient R

th(ch-C)

th(ch-A)

60 V

20 V

±

83 A

±

332 A

±

100 W

1.5 W

150 °C

–55 to +150 °C

75 A

562 mJ

1.25

83.3

C/W

°

C/W

°

(TO-262)

(TO-263, TO-220SMD)

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D14132EJ2V0DS00 (2nd edition) Date Published May 2000 NS CP(K) Printed in Japan

The mark ★ shows major revised points.

©

1999, 2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3355

Drain to Source On-state Resi stance R

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= 10 V, ID = 42 A4.65.8m = 4.0 V, ID = 42 A6.18.8m

Ω Ω

= 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 42 A3977S Drain Leakage Current I Gate to Source Leakage Current I Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Body Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DSS

VDS = 60 V, VGS = 0 V10

GSS

VGS = ±20 V, VDS = 0 V

iss

VDS = 10 V, VGS = 0 V, f = 1 MHz 9800 pF

oss

rss

d(on)ID

d(off)

GS

GD

F(S-D)IF

rr

= 42 A, V

r

RG = 10

f

G

ID = 83 A , VDD = 48 V, VGS = 10 V 170 nC

= 83 A, VGS = 0 V0.99V

IF = 83 A, VGS = 0 V, 64 ns

rr

di/dt = 100 A/µs 130 nC

GS(on)

= 10 V, VDD = 30 V, 130 ns

Ω

1500 pF

1450 ns

±

630 pF

510 ns 510 ns

28 nC 46 nC

10

A

µ

A

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

BV

DSS

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

PG.

GS

V

0

τ = 1 s Duty Cycle ≤ 1 %

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10 %

0

90 %

I

D

10 %

0

t

d(on)

r

t

on

t

90 %

V

GS

(on)

90 %

I

D

10 %

t

d(off)

t

f

t

off

2

Data Sheet D14132EJ2V0DS00

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

T

ch

- Channel Temperature -

˚C

dT - Percentage of Rated Power - %

04020 60 100 14080 120 160

100

80

60

40

20

0

TC - Case Temperature - ˚C

P

T

- Total Power Dissipation - W

0

8020 40 60 100 140120 160

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

20

40

60

80

100

140 120

FORWARD BIAS SAFE OPERATING AREA

1 10 100

I

D

- Drain Current - A

0.1 V

DS

- Drain to Source Voltage - V

1000

100

10

1

100

µs

1

ms

PW

=

10

µs

ID(pulse)

I

D(DC)

10

ms

DC Dissipation Limited

TC = 25˚C Single Pulse

R

DS(on)

Limited

(at V

GS

= 10 V)

★

TYPICAL CHARACTERISTICS (TA = 25 °C )

2SK3355

1000

100

10

1

0.1

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.01

µ

10

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 m 10 m 100 m 1 10 100 1000

100

µ

PW - Pulse Width - s

Data Sheet D14132EJ2V0DS00

Single Pulse

R

th(ch-A)

th(ch-C)

= 83.3 ˚C/W

= 1.25 ˚C/W

3