NEC 2SK3326 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3326

DESCRIPTION

The 2SK3326 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.

FEATURES

• Low gate charge :
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

DS(on)

R

= 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A)

• Avalanche capability ratings

• Isolated TO-220(MP-45F) package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V

DS

= 0 V) V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note2

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

ch

stg

AS

I

AS

E

T

T

–55 to +150 °C

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3326 Isolated TO-220

(Isolated TO-220)

500 V

±30 V
±10 A
±40 A

40 W

2.0 W

150 °C

10 A

10.7 mJ

Notes 1.

Document No. D14204EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan

PW ≤ 10

2.

Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

µ

s, Duty Cycle ≤ 1 %

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

©

2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TE ST CONDITIONS MIN. TYP. MAX. UNIT

2SK3326

Drain Leakage Current I
Gate to Source Leakage Current I
Gate to Source Cut-off Voltage V

DSS

VDS = 500 V, VGS = 0 V 100

GSS

VGS = ±30 V, VDS = 0 V

GS(off)VDS

= 10 V, ID = 1 mA 2.5 3.5 V

100 nA

±

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 5.0 A 2.0 4.0 S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V

Reverse Recovery Time t
Reverse Recovery Charge Q

DS(on)VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

rr

= 10 V, ID = 5.0 A 0.68 0.85

VDS = 10 V, VGS = 0 V, f = 1 MHz

VDD = 150 V, ID = 5.0 A, V

G

Ω,

R

L

= 60

R

= 10

VDD = 400 V, VGS = 10 V, ID = 10 A

= 10 A, VGS = 0 V1.0V

IF = 10 A, VGS = 0 V, di/dt = 50 A /

1200 pF

190 pF

10 pF

GS(on)

= 10 V,

Ω

21 ns
11 ns
40 ns

9.5 ns
22 nC

6.5 nC

7.5 nC

s

µ

0.5

2.6

A

µ

Ω

s

µ

C

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

VGS = 20 → 0 V

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

V

L

R

V

Wave Form

V

DD

I

Wave Form

GS

GS

D

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

trt

t

on

GS(on)

D

d(off)tf

t

%

90

90

%

%

off

2

Data Sheet D14204EJ1V0DS00

TYPICAL CHARACTERISTICS(TA = 25 °C)

2SK3326

Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

020 80

40 60 100 120 140 160
T

c

- Case Temperature - ˚C

Figure3. FORWARD BIAS SAFE OPERATING AREA

100

I

D (pulse)

PW = 10 µs

Limited

I

D (DC)

10

1

- Drain Current - A

D

I

Tc = 25 ˚C
Single Pulse

0.1
1

V

= 10 V)

DS(on)

GS

R

(at V

Power Dissipation Limited

100 ms

10 100 1000

DS

- Drain to Source Voltage - V

100 µs

1ms

10 ms

Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

100

Pulsed

Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

50

40

30

20

10

- Total Power Dissipation - W

T

P

20 40 60 80 100 120 140 160

0

c

- Case Temperature - ˚C

T

Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

20

Pulsed

10

ID - Drain Current - A

0

4 8 12 16

DS - Drain to Source Voltage - V

V

VGS = 20 V

10 V

8.0 V

VGS = 6.0 V

10

1

0.1

0.01

- Drain Current - A

D

I

0.001

0.0001
0

V

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

51015

GS

- Gate to Source Voltage - V

Data Sheet D14204EJ1V0DS00

3