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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK3306
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
• Low gate charge :
★★★★
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
DS(on)
R
= 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Avalanche capability ratings
• Isolated TO-220(MP-45F) package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V
DS
= 0 V) V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Note1
C
= 25°C) P
A
= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
DSS
GSS(AC)
D(DC)
D(pulse)
I
T
T
ch
stg
AS
I
AS
E
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3306 Isolated TO-220 (MP-45F)
(Isolated TO-220)
500 V
±30 V
±5A
±20 A
35 W
2.0 W
150 °C
–55 to +150 °C
5.0 A
125 mJ
Notes 1.
Document No. D14004EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
PW ≤ 10
2.
Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
µ
s, Duty Cycle ≤ 1 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
★★★★
shows major revised points.
©
1999
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ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TE ST CONDITIONS
2SK3306
Drain Leakage Current I
★★★★
Gate to Source Leakage Current I
Gate to Source Cut-off Voltage V
★★★★
Forward Transfer Admittance | yfs | 1.0 3.0 S VDS = 10 V, ID = 2.5 A
★★★★
Drain to Source On-state Resi stance R
Input Capacitance C
★★★★
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
★★★★
Total Gate Charge Q
★★★★
Gate to Source Charge Q
★★★★
Gate to Drain Charge Q
★★★★
Body Diode Forward Voltage V
Reverse Recovery Time t
★★★★
Reverse Recovery Charge Q
DSS
GSS
GS(off)
DS(on)
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)
rr
rr
100
100 nA V
±
AVDS = 500 V, VGS = 0 V
µ
GS
= ±30 V, VDS = 0 V
2.5 3.5 V VDS = 10 V, ID = 1 mA
1.35 1.5
VGS = 10 V, ID = 2.5 A
Ω
700 pF VDS = 10 V, VGS = 0 V, f = 1 MHz
115 pF
6pF
16 ns VDD = 150 V, ID = 2.5 A, V
3nsR
G
= 10
33 ns
5.5 ns
13 nC VDD = 400 V, V
4nC
4.5 nC
1.0 V IF = 5.0 A, VGS = 0 V
0.7
3.3
sIF = 5.0 A, VGS = 0 V, di/dt = 50 A /
µ
C
µ
Ω,
R
L
= 60
GS(on)
GS(on)
= 10 V,
Ω
= 10 V, ID = 5.0 A
µ
s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
L
V
DD
PG
RG = 25 Ω
50 Ω
VGS = 20 → 0 V
BV
DSS
I
AS
V
I
D
V
DD
DS
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
IG = 2 mA
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
R
G
PG.
GS
V
0
τ = 1 s
Duty Cycle ≤ 1 %
R
V
DD
τ
µ
GS
V
Wave Form
I
D
Wave Form
V
GS
10 %
0
90 %
I
D
10 %
0
t
t
d(on)
t
on
90 %
V
GS
(on)
90 %
I
D
10 %
r
t
d(off)
t
f
t
off
2
Data Sheet D14004EJ2V0DS00
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TYPICAL CHARACTERISTICS(TA = 25 °C)
2SK3306
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
020
40 60 100 120 140 160
c
- Case Temperature - ˚C
T
80
FORWARD BIAS SAFE OPERATING AREA
100
Limited
= 10 V)
DS (on)
GS
I
D (DC)
R
(at V
Power Dissipation Limited
100 ms
10
1
- Drain Current - A
D
I
Tc = 25 ˚C
Single Pulse
0.1
1
10 100 1000
DS
- Drain to Source Voltage - V
V
I
D (pulse)
10 ms
1ms
PW = 10 µs
100 µs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
- Total Power Dissipation - W
T
P
20 40 60 80 100 120 140 160
0
c
- Case Temperature - ˚C
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
8
VGS = 20 V
6
4
- Drain Current - A
D
I
2
0
4 8 12 16
DS
- Drain to Source Voltage - V
V
Pulsed
10 V
8.0 V
VGS = 6.0 V
1000
100
10
1
0.1
- Drain Current - A
D
I
0.01
0.001
0
GS
V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Pulsed
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
51015
- Gate to Source Voltage - V
Data Sheet D14004EJ2V0DS00
3