NEC 2SK3306 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3306

DESCRIPTION

The 2SK3306 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.

FEATURES

• Low gate charge :

★★★★

QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

DS(on)

R

= 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)

• Avalanche capability ratings

• Isolated TO-220(MP-45F) package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V

DS

= 0 V) V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note2

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

T

T

ch

stg

AS

I

AS

E

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3306 Isolated TO-220 (MP-45F)

(Isolated TO-220)

500 V

±30 V

±5A

±20 A

35 W

2.0 W

150 °C

–55 to +150 °C

5.0 A

125 mJ

Notes 1.

Document No. D14004EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan

PW ≤ 10

2.

Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

µ

s, Duty Cycle ≤ 1 %

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

The mark

★★★★

shows major revised points.

©

1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TE ST CONDITIONS

2SK3306

Drain Leakage Current I

★★★★

Gate to Source Leakage Current I
Gate to Source Cut-off Voltage V

★★★★

Forward Transfer Admittance | yfs | 1.0 3.0 S VDS = 10 V, ID = 2.5 A

★★★★

Drain to Source On-state Resi stance R
Input Capacitance C

★★★★

Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t

★★★★

Total Gate Charge Q

★★★★

Gate to Source Charge Q

★★★★

Gate to Drain Charge Q

★★★★

Body Diode Forward Voltage V
Reverse Recovery Time t

★★★★

Reverse Recovery Charge Q

DSS

GSS

GS(off)

DS(on)

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)

rr

rr

100

100 nA V

±

AVDS = 500 V, VGS = 0 V

µ

GS

= ±30 V, VDS = 0 V

2.5 3.5 V VDS = 10 V, ID = 1 mA

1.35 1.5

VGS = 10 V, ID = 2.5 A

Ω

700 pF VDS = 10 V, VGS = 0 V, f = 1 MHz
115 pF

6pF

16 ns VDD = 150 V, ID = 2.5 A, V

3nsR

G

= 10

33 ns

5.5 ns
13 nC VDD = 400 V, V

4nC

4.5 nC

1.0 V IF = 5.0 A, VGS = 0 V

0.7

3.3

sIF = 5.0 A, VGS = 0 V, di/dt = 50 A /

µ

C

µ

Ω,

R

L

= 60

GS(on)

GS(on)

= 10 V,

Ω

= 10 V, ID = 5.0 A

µ

s

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

BV

DSS

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

PG.

GS

V

0

τ = 1 s
Duty Cycle ≤ 1 %

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10 %

0

90 %

I

D

10 %

0

t

t

d(on)

t

on

90 %

V

GS

(on)

90 %

I

D

10 %

r

t

d(off)

t

f

t

off

2

Data Sheet D14004EJ2V0DS00

TYPICAL CHARACTERISTICS(TA = 25 °C)

2SK3306

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

020

40 60 100 120 140 160

c

- Case Temperature - ˚C

T

80

FORWARD BIAS SAFE OPERATING AREA

100

Limited

= 10 V)

DS (on)

GS

I

D (DC)

R

(at V

Power Dissipation Limited

100 ms

10

1

- Drain Current - A

D

I

Tc = 25 ˚C
Single Pulse

0.1
1

10 100 1000

DS

- Drain to Source Voltage - V

V

I

D (pulse)

10 ms

1ms

PW = 10 µs

100 µs

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

50

40

30

20

10

- Total Power Dissipation - W

T

P

20 40 60 80 100 120 140 160

0

c

- Case Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

10

8

VGS = 20 V

6

4

- Drain Current - A

D

I

2

0

4 8 12 16

DS

- Drain to Source Voltage - V

V

Pulsed

10 V

8.0 V

VGS = 6.0 V

1000

100

10

1

0.1

- Drain Current - A

D

I

0.01

0.001
0

GS

V

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

Pulsed

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

51015

- Gate to Source Voltage - V

Data Sheet D14004EJ2V0DS00

3