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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK3305
DESCRIPTION
The 2SK3305 is N-Channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
• Low gate charge:
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
DS(on)
R
= 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V
DS
= 0 V) V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Note1
C
= 25°C) P
A
= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
DSS
GSS(AC)
D(DC)
D(pulse)
I
ch
stg
AS
I
AS
E
500 V
±30 V
±5A
±20 A
T
T
75 W
1.5 W
150 °C
–55 to +150 °C
5.0 A
125 mJ
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3305
2SK3305-S
2SK3305-ZJ
(TO-220AB)
(TO-262)
(TO-263)
TO-220AB
TO-262
TO-263
Notes 1.
Document No. D14003EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
PW ≤ 10
2.
Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
µ
s, Duty Cycle ≤ 1 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
1998,2000
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ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3305
Drain Leakage Current I
Gate to Source Leakage Current I
Gate to Source Cut-off Voltage V
DSS
VDS = 500 V, VGS = 0 V 100
GSS
VGS = ±30 V, VDS = 0 V
GS(off)VDS
= 10 V, ID = 1 mA 2.5 3.5 V
100 nA
±
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 2.5 A 1.0 3.0 S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DS(on)VGS
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
rr
rr
= 10 V, ID = 2.5 A 1.3 1.5
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 150 V, ID = 2.5 A, V
G
R
= 10
RL = 60
Ω,
VDD = 400 V, VGS = 10 V, ID = 5.0 A
= 5.0 A, VGS = 0 V 0.9 V
IF = 5.0 A, VGS = 0 V, di/dt = 50 A /
700 pF
115 pF
6pF
GS(on)
= 10 V,
Ω
16 ns
3ns
33 ns
5.5 ns
13 nC
4nC
4.5 nC
s
µ
0.6
3.3
A
µ
Ω
s
µ
C
µ
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
VGS = 20 → 0 V
V
G
R
DD
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
V
DS
Starting T
L
DD
V
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
PG.
= 2 mA
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
G
V
V
GS
Wave Form
I
D
Wave Form
GS
10 %
0
I
D
10 %10
0
t
d(on)
V
90
%
I
trt
t
on
GS(on)
D
d(off)tf
%
90
90
%
%
t
off
L
R
V
DD
2
Data Sheet D14003EJ1V0DS00
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TYPICAL CHARACTERISTICS (TA = 25°C)
2SK3305
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
020 80
40 60 100 120 140 160
T
c
- Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
PW = 10 µs
I
D (pulse)
10
R
DS (on)
Limited
I
D (DC)
Power Dissipation Limited
100 µs
1ms
10 ms
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
- Total Power Dissipation - W
T
P
20 40 60 80 100 120 140 160
0
c
- Case Temperature - ˚C
T
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
8
VGS = 20 V
6
Pulsed
10 V
8.0 V
1
- Drain Current - A
D
I
Tc = 25 ˚C
Single Pulse
0.1
1
V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1000
100
10
1
0.1
- Drain Current - A
D
I
0.01
0.001
0
GS
V
10 100 1000
DS
- Drain to Source Voltage - V
Pulsed
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
51015
- Gate to Source Voltage - V
4
ID - Drain Current - A
2
0
DS - Drain to Source Voltage - V
V
VGS = 6.0 V
4 8 12 16
Data Sheet D14003EJ1V0DS00
3