NEC 2SK3305-S, 2SK3305, 2SK3305-ZJ Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3305

DESCRIPTION

The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low gate charge: QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)

• Gate voltage rating: ±30 V

• Low on-state resistance

DS(on)

R

= 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)

• Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V Gate to Source Voltage (V

DS

= 0 V) V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation (T Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P Channel Temperature T Storage Temperature T Single Avalanche Current Single Avalanche Energy

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

ch

stg

AS

I

AS

E

500 V

±30 V

±5A

±20 A

T

75 W

1.5 W

150 °C

–55 to +150 °C

5.0 A

125 mJ

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3305

2SK3305-S

2SK3305-ZJ

(TO-220AB)

(TO-262)

(TO-263)

TO-220AB

TO-262 TO-263

Notes 1.

Document No. D14003EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan

PW ≤ 10

2.

Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

µ

s, Duty Cycle ≤ 1 %

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

©

1998,2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3305

Drain Leakage Current I Gate to Source Leakage Current I Gate to Source Cut-off Voltage V

DSS

VDS = 500 V, VGS = 0 V 100

GSS

VGS = ±30 V, VDS = 0 V

GS(off)VDS

= 10 V, ID = 1 mA 2.5 3.5 V

100 nA

±

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 2.5 A 1.0 3.0 S Drain to Source On-state Resi stance R Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Body Diode Forward Voltage V

Reverse Recovery Time t Reverse Recovery Charge Q

DS(on)VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

= 10 V, ID = 2.5 A 1.3 1.5

VDS = 10 V, VGS = 0 V, f = 1 MHz

VDD = 150 V, ID = 2.5 A, V

G

R

= 10

RL = 60

Ω,

VDD = 400 V, VGS = 10 V, ID = 5.0 A

= 5.0 A, VGS = 0 V 0.9 V

IF = 5.0 A, VGS = 0 V, di/dt = 50 A /

700 pF 115 pF

6pF

GS(on)

= 10 V,

Ω

16 ns

3ns

33 ns

5.5 ns 13 nC

4nC

4.5 nC

s

µ

0.6

3.3

A

µ

Ω

s

µ

C

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

VGS = 20 → 0 V

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

trt

t

on

GS(on)

D

d(off)tf

%

90

%

t

off

L

R

V

DD

2

Data Sheet D14003EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3305

Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

020 80

40 60 100 120 140 160 T

c

- Case Temperature - ˚C

Figure3. FORWARD BIAS SAFE OPERATING AREA

100

PW = 10 µs

I

D (pulse)

10

R

DS (on)

Limited

I

D (DC)

Power Dissipation Limited

100 µs

1ms

10 ms

Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

100

80

60

40

20

- Total Power Dissipation - W

T

P

20 40 60 80 100 120 140 160

0

c

- Case Temperature - ˚C

T

Figure4. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

10

8

VGS = 20 V

6

Pulsed

10 V

8.0 V

1

- Drain Current - A

D

I

Tc = 25 ˚C Single Pulse

0.1 1

V

Figure5. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE

1000

100

10

1

0.1

- Drain Current - A

D

I

0.01

0.001 0

GS

V

10 100 1000

DS

- Drain to Source Voltage - V

Pulsed

TA = –25 ˚C

25 ˚C 75 ˚C

125 ˚C

51015

- Gate to Source Voltage - V

4

ID - Drain Current - A

2

0

DS - Drain to Source Voltage - V

V

VGS = 6.0 V

4 8 12 16

Data Sheet D14003EJ1V0DS00

3