NEC 2SK3298 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3298

DESCRIPTION

The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.

FEATURES

•Low gate charge

G

= 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)

Q

•Gate voltage rating ±30 V

•Low on-state resistance

DS(on)

= 0.75 Ω MAX. (VGS = 10 V, ID = 4.0 A)

R

•Avalanche capability rating s

•Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS = 0 V) V
Drain Current (DC) (TC = 25°C) I
Drain Current (Pulse)

Note1

DSS

GSS

D(DC)

D(pulse)

I

600 V

±30 V

±7.5 A

±30 A

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3298 Isolated TO-220

Total Power Dissipation (TA = 25°C) P
Total Power Dissipation (TC = 25°C) P

Channel Temperature T
Storage Temperature T

Single Avalanche Current
Single Avalanche Energy

Notes 1.

Document No. D14059EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan

PW ≤ 10
Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

2.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Note2

Note2

µ

s, Duty Cycle ≤ 1 %

T1

T2

ch

stg

AS

I

AS

E

The mark

2.0 W
40 W

150 °C

−55 to +150 °C

7.5 A

37.5 mJ

★★★★

shows major revised points.

©

1999, 2000

ELECTRICAL CHARACTERISTICS(TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Leakage Current I
Gate Leakage Current I

DSS

GSS

VDS = 600 V, VGS = 0 V 100
VGS = ±30 V, VDS = 0 V

2SK3298

µ

A

±

100

nA

Gate Cut-off Voltage V

GS(off)

VDS = 10 V, ID = 1 mA 2.5 3.5 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 4.0 A 3.2 S
Drain to Source On-state Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

TEST CIRCUIT 1 AVALANCHE CAPABILITY

DS(on)

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

rr

VGS = 10 V, ID = 4.0 A 0.67 0.75

VDS = 10 V 1580 pF

VGS = 0 V 280 pF

f = 1 MHz 25 pF

ID = 4.0 A 27 ns

GS(on)

V

= 10 V 14 ns
VDD = 150 V 66 ns
RG = 10

Ω

24 ns
ID = 7.5 A 34 nC
VDD = 450 V 8.2 nC
VGS = 10 V 12.3 nC

= 7.5 A, VGS = 0 V 1.0 V

IF = 7.5 A, VGS = 0 V 1.6
di/dt = 50 A/µs

9.0

TEST CIRCUIT 2 SWITCHING TIME

Ω

µ

s

µ

C

D.U.T.

RG = 25 Ω

PG.

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

I

D

V

DD

Starting T

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

IG = 2 mA

PG.

50 Ω

L

V

DD

PG.

V

V

DS

ch

R

L

V

DD

GS

0

τ = 1 s

µ

Duty Cycle ≤ 1 %

D.U.T.

V

GS

L

R

GS

V

G

R

Wave Form

V

DD

I

D

Wave Form

τ

10 %

0

I

90 %

D

10 %

0

t

d(on)

r

t

on

t

90 %

V

GS

(on)

90 %

I

D

10 %

t

d(off)

t

f

t

off

2

Data Sheet D14059EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

10 4020 30

5

15

20

10

0

0

25

30

6.0 V

VGS = 10 V

8.0 V

Pulsed

GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE

T

ch

- Channel Temperature - ˚C

V

GS(off)

- Gate to Source Cut-off Voltage - V

–50 0 50 100 150

5.0

4.0

3.0

2.0

1.0

0

V

DS

= 10 V

I

D

= 1 mA

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1.0 10 100
I

D

- Drain Current - A

| y

fs

| - Forward Transfer Admittance - S

10

100

0.1

1.0

0.1

V

DS

= 10 V

Pulsed

Tch = –25˚C

25˚C
75˚C

125˚C

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

15

2.0

3.0

V

GS

- Gate to Source Voltage - V

R

DS (on)

- Drain to Source On-State Resistance - Ω

1.0

0

5100

ID = 7.5 A

4.0 A

Pulsed

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

1 10 100

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-State Resistance - Ω

3.0

4.0

0

0

1.0

2.0

20 V

VGS = 10 V

2SK3298

FORWARD TRANSFER CHARACTERISTICS

100

Tch = –25˚C

10

1.0

- Drain Current - A

D

I

0.1

0

V

GS

V
Pulsed

25˚C

Tch = 75˚C

125˚C

- Gate to Source Voltage - V

DS

= 10 V

151050

Data Sheet D14059EJ1V0DS00

3