DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance
R
DS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge
G = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
Q
• Gate voltage rating : ±30 V
• Avalanche capability ratings
<R>
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
2SK3113B-S15-AY
2SK3113B(1)-S27-AY
2SK3113B-ZK-E1-AY
2SK3113B-ZK-E2-AY
Note
Note
Note
Note
Pure Sn (Tin)
Tube 70 p/tube TO-251 (MP-3-a) typ. 0.39 g
Tube 75 p/tube
Tape 2500 p/reel TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
DS = 0 V) VGSS ±30 V
C = 25°C) ID(DC) ±2.0 A
Note1
C = 25°C) PT1 20 W
A = 25°C)
Note3
Note3
Note2
D(pulse) ±8.0 A
I
T2 1.0 W
P
ch 150 °C
stg –55 to +150 °C
AS 2.0 A
I
AS 2.7 mJ
E
TO-251 (MP-3-b) typ. 0.34 g
600
V
(TO-251)
(TO-252)
Notes 1. PW ≤ 10
μ
s, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting T
Document No. D18061EJ3V0DS00 (3rd edition)
Date Published June 2007 NS
Printed in Japan
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
ch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
The mark <R> shows major revised points.
2006
2SK3113B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 μA
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 μA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance Ciss VDS = 10 V 290 pF
Output Capacitance Coss VGS = 0 V 75 pF
Reverse Transfer Capacitance Crss f = 1 MHz 7 pF
Turn-on Delay Time td(on) VDD = 150 V, ID = 1.0 A 10.5 ns
Rise Time tr VGS = 10 V 4.8 ns
Turn-off Delay Time td(off) RG = 10 Ω 15.8 ns
Fall Time tf RL = 10 Ω 10.5 ns
Total Gate Charge QG VDD = 450 V 7.9 nC
Gate to Source Charge QGS VGS = 10 V 2.7 nC
Gate to Drain Charge QGD ID = 2.0 A 3.2 nC
Body Diode Forward Voltage
Reverse Recovery Time trr IF = 2.0 A, VGS = 0 V 190 ns
Reverse Recovery Charge Qrr di/dt = 50 A/μs 500 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
Note
| yfs | VDS = 10 V, ID = 1.0 A 0.5 0.9 S
Note
RDS(on) VGS = 10 V, ID = 1.0 A 3.2 4.4
Note
VF( S-D) IF = 2.0 A, VGS = 0 V 0.8 V
TEST CIRCUIT 2 SWITCHING TIME
Ω
D.U.T.
RG = 25 Ω
PG.
50 Ω
VGS = 20 → 0 V
DSS
BV
I
AS
I
D
DD
V
Starting T
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
L
V
DD
PG.
V
V
DS
ch
L
R
V
DD
GS
0
μ
τ = 1 s
Duty Cycle ≤ 1%
D.U.T.
V
GS
R
L
V
GS
R
G
Wave Form
V
DD
I
D
Wave Form
τ
10%
0
I
D
10%
0
t
d(on)trtd(off)
90%
t
on
90%
V
GS
90%
I
D
10%
t
f
t
off
2
Data Sheet D18061EJ3V0DS
2SK3113B
TYPICAL CHARACTERISTICS (TA = 25°C)
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
04020 60 100 14080 120 160
T
ch - Channel Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
40
35
30
25
20
15
10
5
0
0
PT - Total Power Dissipation - W
T
C - Case Temperature - °C
8020 40 60 100 140120 160
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
100
Tc = 25°C, Single pulse
I
D(pulse)
10
D(DC)
I
1
R
DS(on)
0.1
(at V
Power Dissipation Limited
Limited
GS
= 10 V)
PW = 10 μs
100 μs
1 ms
10 ms
0.01
1 10 100 1000
DS - Drain to Source Voltage - V
V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
R
= 125°C/W
th(ch-A)
100
R
= 6.25°C/W
10
th(ch-C)
1
0.1
rth(ch-A) - Transient Thermal Resistance - °C/W
0.01
100
μ
1 m 10 m 100 m 1 10 100 1000
Single pulse
PW - Pulse Width – s
Data Sheet D18061EJ3V0DS
3
2SK3113B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
5
4.5
4
VGS = 10 V
Pulsed
3.5
3
8 V
2.5
2
1.5
1
0.5
ID - Drain Current - A
0
0 5 10 15 20 25
DS - Drain to Source Voltage - V
V
FORWARD TRANSFER CHARACTERISTICS
100
10
1
Tch = 125°C
75°C
ID - Drain Current - A
0.1
0.01
−
25°C
25°C
VDS = 10 V
Pulsed
0 5 10 15 20 25 30
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
5
4.5
4
3.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10 V
Pulsed
Tch = − 25°C
25°C
1
3
2.5
2
1.5
1
VDS = 10 V
0.5
I
= 1 mA
D
0
VGS(off) - Gate Cut-off Voltage - V
-50 0 50 100 150
ch - Channel Temperature - °C
T
| yfs | - Forward Transfer Admittance - S
0.1
0.01
0.01 0.1 1 10
ID - Drain Current - A
125°C
75°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8.0
7.0
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
6.0
5.5
5.0
6.0
5.0
4.0
ID = 2.0 A
4.5
4.0
3.5
VGS = 10 V
3.0
3.0
1.0 A
2.0
RDS(on) - Drain to Source On-state Resistance - Ω
0 5 10 15 20 25
GS – Gate to Source Voltage - V
V
2.5
2.0
0.01 0.1 1 10
RDS(on) - Drain to Source On-state Resistance - Ω
20 V
Pulsed
ID - Drain Current - A
4
Data Sheet D18061EJ3V0DS
2SK3113B
)
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
ID = 2.0 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
6
1.0 A
4
2
VGS = 10 V
Pulsed
0
-50 0 50 100 150
RDS(on) - Drain to Source On-state Resistance - Ω
T
ch - Channel Temperature - °C
1
VGS = 10 V
0.1
0 V
IF – Diode Forward Current - A
0.01
0.0 0.5 1.0
V
F(S-D) – Source to Drain Voltage - V
Pu ls ed
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
C
iss
100
C
oss
SWITCHING CHARACTERISTICS
1000
100
VDD = 150 V
V
= 10 V
GS
Ω
= 10
R
G
t
f
t
d(off)
10
VGS = 0 V
C
rss
10
t
d(on
t
r
f = 1 MHz
1
Ciss, Coss, Crss - Capacitance - pF
0.1 1 10 100
DS - Drain to Source Voltage – V
V
td(on), tr, td(off), tf - Switching Time - ns
1
0.1 1 10
I
D - Drain Current - A
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
1000
di/dt = 50 A/μs
GS
= 0 V
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
VDD = 450 V
500
300 V
150 V
400
10
9
8
V
GS
7
6
100
300
5
4
200
100
trr – Reverse Recovery Time - ns
10
0.1 1 10
D - Drain Current - A
I
VDS – Drain to Source Voltage - V
0
0246810
QG – Gate Chage - nC
V
DS
3
2
ID = 2.0 A
1
0
VGS – Gate to Source Voltage - V
Data Sheet D18061EJ3V0DS
5
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
10
2SK3113B
SINGLE AVALANCHE ENERGY
120
100
80
DERATING FACTOR
VDD = 150 V
G
= 25 Ω
R
V
GS
= 20 → 0 V
AS
≤ 2.0 A
I
IAS - Single Avalanche Current - A
1.0
RG = 25 Ω
VDD = 150 V
V
GS
= 20
Starting Tch = 25
0.1
10 μ
IAS = 2.0 A
EAS = 2.7 mJ
→ 0 V
˚C
100 μ 1 m 10 m
L - Inductive Load - H
60
40
20
Energy Derating Factor - %
0
Starting Tch - Starting Channel Temperature - °C
75 15012550 10025
6
Data Sheet D18061EJ3V0DS
<R>
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a) 2) TO-251 (MP-3-b)
Mold Area
4.0 MIN.
6.6 ±0.2
5.3 TYP.
4.3 MIN.
0.7 TYP.6.1 ±0.21.8 ±0.2
2.3 ±0.1
0.5 ±0.1
6.6±0.2
5.3 TYP.
4
1.06 TYP.
2SK3113B
2.3±0.1
0.5±0.1
1423
16.1 TYP.
1.14 MAX.
0.76 ±0.1
2.3 TYP. 2.3 TYP.
No Plating
1.02 TYP.
9.3 TYP.
0.5 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3) TO-252 (MP-3ZK)
2.3±0.1
0.5±0.1
No Plating
0.51 MIN.
No Plating
0 to 0.25
0.5±0.1
4.0 MIN.0.8
1.14 MAX.
6.5±0.2
5.1 TYP.
4.3 MIN.
1423
0.76±0.12
2.3 2.3
1.0 TYP.6.1±0.2
10.4 MAX. (9.8 TYP.)
213
1.14 MAX.
0.76±0.12
2.3 TYP. 2.3 TYP.
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Drain
Source
Body
Diode
6.1±0.21.1±0.13
11.25 TYP.
0.5±0.1
1.04 TYP.
4.13 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D18061EJ3V0DS
7
2SK3113B
•
The information in this document is current as of June, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
•
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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Descriptions of circuits, software and other related information in this document are provided for illustrative
•
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customers or third parties arising from the use of these circuits, software and information.
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"Special":
"Specific":
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
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for life support).
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
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(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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