NEC 2SK3110 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3110 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.

FEATURES

•Gate voltage rating ±30 V

•Low on-state resistance

DS(on)

= 180 mΩ MAX. (VGS = 10 V, ID = 7.0 A)

R

•Low input capacitance

iss

C

= 1000 pF TYP. (VDS = 10 V, VGS = 0 V)

•Built-in gate protection diode

•Avalanche capability rated

•Isolated TO-220 package

2SK3110

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3110 Isolated TO-220

ABSOLUTE MAXIMUM RATING (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS = 0 V) V

C

Drain Current(DC) (T
Drain Current(pulse)
Total Power Dissipation (T
Total Power Dissipation (T

= 25°C) I

Note1

A

= 25°C) P

C

= 25°C) P

Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note1.

2.

PW ≤ 10

Starting T

µ

ch

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Note2

Note2

s, Duty Cycle ≤ 1 %

= 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V

DSS

GSS

D(DC)

D(pulse)

I

T1

T2

ch

stg

AS

I

AS

E

200 V

±30 V
±14 A
±42 A

2.0 W
35 W

150 °C

−55 to +150 °C
14 A
98 mJ

Document No. D13333EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan

The mark ★ shows major revised point s.

©

1998,1999, 2000

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

2SK3110

Drain Leakage Current I
Gate Leakage Current I
Gate Cut-off Voltage
Forward Transfer Admittance | yfs |V
Drain to Source On-state Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DSS

GSS

GS(off)

V

d(on)

r

d(off)

f

F(S-D)

rr

DS(on)

iss

oss

rss

G

GS

GD

rr

VDS = 200 V, VGS = 0 V 100
VGS = ±30 V, VDS = 0 V ±10
VDS = 10 V, ID = 1 mA 2.5 4.5 V

DS

= 10 V, ID = 7.0 A 3.0 S
VGS = 10 V, ID = 7.0 A 120 180
VDS = 10 V 1000 pF
VGS = 0 V 300 pF
f = 1 MHz 150 pF
VDD = 100 V, ID = 7.0 A 25 ns

GS(on)

V

= 10 V 70 ns

RG = 10 Ω

VDD = 160 V 40 nC
VGS = 10 V 7 nC
ID = 14 A 25 nC
IF = 14 A, VGS = 0 V 1.0 V
IF = 14 A, VGS = 0 V 300 ns
di/dt = 50 A/µs

mΩ

80 ns
40 ns

1.5

µ

A

µ

A

µ

C

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

VGS = 20 → 0 V

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

G

= 2 mA

PG.

I

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

R

G

= 10 Ω

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

trt

t

on

GS(on)

D

d(off)tf

%

90

90

%

%

t

off

L

R

V

DD

2

Data Sheet D13333EJ1V0DS00

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

V

GS

- Gate to Source Voltage - V

R

DS(on)

- Drain to Source On-state Resistance - mΩ

500
450
400
350
300
250
200
150
100

50

0

0

24

6

810

12 14

16 18 20

I

D

=

14 A

7.0 A

2.8 A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-state Resistance - mΩ

1

10

100

Pulsed

300

250

200

150

100

50

0

0.1

V

GS

= 10 V

V

GS

= 30 V

★

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3110

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

50
45

V

40

GS

35
30
25
20
15

- Drain Current - A

D

I

10

5
0

0

2

V

DS -

GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

4

Drain to Source Voltage - V

5.0

4.5

4.0

3.5

3.0

= 30 V

6

V
I

V

GS

DS

D

= 1 mA

= 10 V

Pulsed

8

= 10 V

10

FORWARD TRANSFER CHARACTERISTICS

100

10

1

0.1

- Drain Current - A

D

I

0.01

0.001

100

2

34

1

0

V

GS -

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

V

DS

=10 V

Pulsed

Gate to Source Voltage - V

5

67

T

ch

= 125˚C
75˚C
25˚C

-25˚C

10

Tch = -25˚C

Tch = 25˚C

1

Tch = 75˚C

T

ch = 125˚C

0.1

8

Pulsed

VDS = 10 V

910

11 12

2.5

- Gate to Source Cut-off Voltage - V

2.0

GS(off)

V

− 50

0 150

− 25 25 75

ch

- Channel Temperature - ˚C

T

50

100

125

Data Sheet D13333EJ1V0DS00

| - Forward Transfer Admittance - mΩ

0.01

fs

|y

0.01

0.1
I

1

D

- Drain Current - A

10

100

3