NEC 2SK3110 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3110 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance
DS(on)
= 180 mΩ MAX. (VGS = 10 V, ID = 7.0 A)
R
•Low input capacitance
iss
C
= 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
•Built-in gate protection diode
•Avalanche capability rated
•Isolated TO-220 package
2SK3110
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3110 Isolated TO-220
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS = 0 V) V
C
Drain Current(DC) (T
Drain Current(pulse)
Total Power Dissipation (T
Total Power Dissipation (T
= 25°C) I
Note1
A
= 25°C) P
C
= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Note1.
2.
PW ≤ 10
Starting T
µ
ch
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Note2
Note2
s, Duty Cycle ≤ 1 %
= 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V
DSS
GSS
D(DC)
D(pulse)
I
T1
T2
ch
stg
AS
I
AS
E
200 V
±30 V
±14 A
±42 A
2.0 W
35 W
150 °C
−55 to +150 °C
14 A
98 mJ
Document No. D13333EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
The mark ★ shows major revised point s.
©
1998,1999, 2000
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
2SK3110
Drain Leakage Current I
Gate Leakage Current I
Gate Cut-off Voltage
Forward Transfer Admittance | yfs |V
Drain to Source On-state Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DSS
GSS
GS(off)
V
d(on)
r
d(off)
f
F(S-D)
rr
DS(on)
iss
oss
rss
G
GS
GD
rr
VDS = 200 V, VGS = 0 V 100
VGS = ±30 V, VDS = 0 V ±10
VDS = 10 V, ID = 1 mA 2.5 4.5 V
DS
= 10 V, ID = 7.0 A 3.0 S
VGS = 10 V, ID = 7.0 A 120 180
VDS = 10 V 1000 pF
VGS = 0 V 300 pF
f = 1 MHz 150 pF
VDD = 100 V, ID = 7.0 A 25 ns
GS(on)
V
= 10 V 70 ns
RG = 10 Ω
VDD = 160 V 40 nC
VGS = 10 V 7 nC
ID = 14 A 25 nC
IF = 14 A, VGS = 0 V 1.0 V
IF = 14 A, VGS = 0 V 300 ns
di/dt = 50 A/µs
mΩ
80 ns
40 ns
1.5
µ
A
µ
A
µ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
VGS = 20 → 0 V
V
G
R
DD
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
V
DS
Starting T
L
DD
V
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
G
= 2 mA
PG.
I
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
G
R
G
= 10 Ω
V
V
GS
Wave Form
I
D
Wave Form
GS
10 %
0
I
D
10 %10
0
t
d(on)
V
90
%
I
trt
t
on
GS(on)
D
d(off)tf
%
90
90
%
%
t
off
L
R
V
DD
2
Data Sheet D13333EJ1V0DS00
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
500
450
400
350
300
250
200
150
100
50
0
0
24
6
810
12 14
16 18 20
I
D
=
14 A
7.0 A
2.8 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
1
10
100
Pulsed
300
250
200
150
100
50
0
0.1
V
GS
= 10 V
V
GS
= 30 V
★
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK3110
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
45
V
40
GS
35
30
25
20
15
- Drain Current - A
D
I
10
5
0
0
2
V
DS -
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
Drain to Source Voltage - V
5.0
4.5
4.0
3.5
3.0
= 30 V
6
V
I
V
GS
DS
D
= 1 mA
= 10 V
Pulsed
8
= 10 V
10
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
- Drain Current - A
D
I
0.01
0.001
100
2
34
1
0
V
GS -
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
=10 V
Pulsed
Gate to Source Voltage - V
5
67
T
ch
= 125˚C
75˚C
25˚C
-25˚C
10
Tch = -25˚C
Tch = 25˚C
1
Tch = 75˚C
T
ch = 125˚C
0.1
8
Pulsed
VDS = 10 V
910
11 12
2.5
- Gate to Source Cut-off Voltage - V
2.0
GS(off)
V
− 50
0 150
− 25 25 75
ch
- Channel Temperature - ˚C
T
50
100
125
Data Sheet D13333EJ1V0DS00
| - Forward Transfer Admittance - mΩ
0.01
fs
|y
0.01
0.1
I
1
D
- Drain Current - A
10
100
3
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