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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3108 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter.
FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance
DS(on)
= 0.4 Ω MAX. (VGS = 10 V, ID = 4.0 A)
R
•Low input capacitance
iss
C
= 400 pF TYP. (VDS = 10 V, VGS = 0 V)
•Avalanche capability rated
•Built-in gate protection diode
•Isolated TO-220 package
2SK3108
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3108 Isolated TO-220
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS = 0 V) V
C
Drain Current(DC) (T
Drain Current(pulse)
Total Power Dissipation (T
Total Power Dissipation (T
= 25°C) I
Note1
A
= 25°C) P
C
= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Note1.
2.
PW ≤ 10
Starting T
µ
ch
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Note2
Note2
s, Duty Cycle ≤ 1%
= 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V
DSS
GSS
D(DC)
D(pulse)
I
T1
T2
ch
stg
AS
I
AS
E
200 V
±30 V
±8.0 A
±24 A
2.0 W
25 W
150 °C
−55 to +150 °C
8.0 A
51 mJ
Document No. D13331EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
The mark ★ shows major revised point s.
©
1998,2000
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
2SK3108
Drain Leakage Current I
Gate Leakage Current I
Gate to Source Cut-off Voltage
Forward Transfer Admittance | yfs |V
Drain to Source On-state Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
★
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DSS
GSS
GS(off)
V
d(on)
r
d(off)
f
F(S-D)
rr
DS(on)
iss
oss
rss
G
GS
GD
rr
VDS = 200 V, VGS = 0 V 100
VGS = ±30 V, VDS = 0 V ±10
VDS = 10 V, ID = 1 mA 2.5 4.5 V
DS
VGS = 10 V, ID = 4.0 A 0.32 0.4
VDS = 10 V 400 pF
VGS = 0 V 110 pF
f = 1 MHz 55 pF
VDD = 100 V, ID = 4.0 A 12 ns
GS(on)
V
RG = 10 Ω
VDD = 160 V 18 nC
VGS = 10 V 3.5 nC
ID = 8.0 A 10 nC
IF = 8.0 A, VGS = 0 V 1.0 V
IF = 8.0 A, VGS = 0 V 250 ns
di/dt = 50 A/µs
µ
µ
= 10 V, ID = 4.0 A 1.5 S
= 10 V 25 ns
40 ns
20 ns
1.0
µ
A
A
Ω
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
VGS = 20 → 0 V
V
G
R
DD
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
V
DS
Starting T
L
DD
V
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
G
= 2 mA
PG.
I
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
G
V
R
L
V
Wave Form
V
DD
I
Wave Form
GS
GS
D
10 %
0
I
D
10 %10
0
t
d(on)
V
90
%
I
D
trt
t
on
GS(on)
d(off)tf
t
off
%
90
90
%
%
2
Data Sheet D13331EJ1V0DS00
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GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
− 50
50
100
0 150
5.0
4.5
4.0
3.5
3.0
2.5
2.0
− 25 25 75
125
★
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK3108
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
25
20
15
10
- Drain Current - A
D
I
5
0
0
68
2
4
V
DS -
Drain to Source Voltage - V
10
1214
V
GS
= 30 V
V
1618
GS
2022
= 10 V
Pulsed
24
26
28
30
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
T
ch
5
67
=125˚C
75˚C
25˚C
-25˚C
910
8
Tch = 75˚C
Tch = 125˚C
- Drain Current - A
D
I
0.01
0.001
0
2
34
1
GS -
V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS =10 V
Pulsed
Tch = -25˚C
1
Tch = 25˚C
Gate to Source Voltage - V
0.1
1112
Pulsed
VDS = 10 V
131415
16
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.0
0.8
0.6
0.4
0.2
- Drain to Source On-state Resistance - Ω
0
0
DS(on)
R
24
6
GS
- Gate to Source Voltage - V
V
I
D
810
=
8.0 A
4.0 A
1.6 A
12 14
Pulsed
16 18 20
0.01
|yfs| - Forward Transfer Admittance - s
0.01
1.0
0.8
0.6
0.4
0.2
- Drain to Source On-state Resistance - Ω
0
0.1
DS(on)
R
0.1
I
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
D
- Drain Current - A
I
1
D- Drain Current - A
V
GS
= 10 V
1
10
10
V
GS
100
Pulsed
= 30 V
100
Data Sheet D13331EJ1V0DS00
3