NEC 2SK3108 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

FEATURES

•Gate voltage rating ±30 V

•Low on-state resistance

DS(on)

= 0.4 Ω MAX. (VGS = 10 V, ID = 4.0 A)

R

•Low input capacitance

iss

C

= 400 pF TYP. (VDS = 10 V, VGS = 0 V)

•Avalanche capability rated

•Built-in gate protection diode

•Isolated TO-220 package

2SK3108

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3108 Isolated TO-220

ABSOLUTE MAXIMUM RATING (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V Gate to Source Voltage (VDS = 0 V) V

C

Drain Current(DC) (T Drain Current(pulse) Total Power Dissipation (T Total Power Dissipation (T

= 25°C) I

Note1

A

= 25°C) P

C

= 25°C) P

Channel Temperature T Storage Temperature T Single Avalanche Current Single Avalanche Energy

Note1.

2.

PW ≤ 10

Starting T

µ

ch

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Note2

s, Duty Cycle ≤ 1%

= 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V

DSS

GSS

D(DC)

D(pulse)

I

T1

T2

ch

stg

AS

I

AS

E

200 V

±30 V

±8.0 A

±24 A

2.0 W 25 W

150 °C

−55 to +150 °C

8.0 A 51 mJ

Document No. D13331EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan

The mark ★ shows major revised point s.

©

1998,2000

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

2SK3108

Drain Leakage Current I Gate Leakage Current I Gate to Source Cut-off Voltage Forward Transfer Admittance | yfs |V Drain to Source On-state Resistance R Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t

★

Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DSS

GSS

GS(off)

V

d(on)

r

d(off)

f

F(S-D)

rr

DS(on)

iss

oss

rss

G

GS

GD

rr

VDS = 200 V, VGS = 0 V 100 VGS = ±30 V, VDS = 0 V ±10 VDS = 10 V, ID = 1 mA 2.5 4.5 V

DS

VGS = 10 V, ID = 4.0 A 0.32 0.4 VDS = 10 V 400 pF VGS = 0 V 110 pF f = 1 MHz 55 pF VDD = 100 V, ID = 4.0 A 12 ns

GS(on)

V RG = 10 Ω

VDD = 160 V 18 nC VGS = 10 V 3.5 nC ID = 8.0 A 10 nC IF = 8.0 A, VGS = 0 V 1.0 V IF = 8.0 A, VGS = 0 V 250 ns di/dt = 50 A/µs

µ µ

= 10 V, ID = 4.0 A 1.5 S

= 10 V 25 ns

40 ns 20 ns

1.0

µ

A A

Ω

C

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

VGS = 20 → 0 V

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

G

= 2 mA

PG.

I

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

V

R

L

V

Wave Form

V

DD

I

Wave Form

GS

D

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

D

trt

t

on

GS(on)

d(off)tf

t

off

%

90

%

2

Data Sheet D13331EJ1V0DS00

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

T

ch

- Channel Temperature - ˚C

V

GS(off)

- Gate to Source Cut-off Voltage - V

V

DS

= 10 V

I

D

= 1 mA

− 50

50

100

0 150

5.0

4.5

4.0

3.5

3.0

2.5

2.0

− 25 25 75

125

★

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3108

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

30

25

20

15

10

- Drain Current - A

D

I

5

0

68

2

4

V

DS -

Drain to Source Voltage - V

10

1214

V

GS

= 30 V

V

1618

GS

2022

= 10 V

Pulsed

24

26

28

30

FORWARD TRANSFER CHARACTERISTICS

100

10

1

0.1 T

ch

5

67

=125˚C 75˚C 25˚C

-25˚C

910

8

Tch = 75˚C

Tch = 125˚C

- Drain Current - A

D

I

0.01

0.001 0

2

34

1

GS -

V

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

10

VDS =10 V Pulsed

Tch = -25˚C

1

Tch = 25˚C

Gate to Source Voltage - V

0.1

1112

Pulsed

VDS = 10 V

131415

16

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

1.0

0.8

0.6

0.4

0.2

- Drain to Source On-state Resistance - Ω

0

DS(on)

R

24

6

GS

- Gate to Source Voltage - V

V

I

D

810

=

8.0 A

4.0 A

1.6 A

12 14

Pulsed

16 18 20

0.01

|yfs| - Forward Transfer Admittance - s

0.01

1.0

0.8

0.6

0.4

0.2

- Drain to Source On-state Resistance - Ω

0

0.1

DS(on)

R

0.1 I

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

D

- Drain Current - A

I

1

D- Drain Current - A

V

GS

= 10 V

1

10

V

GS

100

Pulsed

= 30 V

100

Data Sheet D13331EJ1V0DS00

3