NEC 2SK3061 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK3061
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
• Low on-state resistance
DS(on)1
R
= 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
DS(on)2
R
= 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
iss
• Low C
iss
: C
= 5200 pF TYP.
• Built-in gate protection diode
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Note1
C
= 25°C) P
A
= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
DSS
GSS(AC)
GSS(DC)
D(DC)
D(pulse)
I
T
T
ch
stg
AS
I
AS
E
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3061 Isolated TO-220
60 V
±20 V
+20, –10 V
±70 A
±280 A
35 W
2.0 W
150 °C
–55 to +150 °C
35 A
122.5 mJ
Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 %
2.
Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V
THERMAL RESISTANCE
Channel to Case R
Channel to Ambient R
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13100EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
th(ch-C)
th(ch-A)
3.57 °C/W
62.5 °C/W
©
1998,1999
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3061
Drain to Source On-state Resi stance R
Gate to Source Cut-off Voltage V
DS(on)1VGS
DS(on)2VGS
R
GS(off)VDS
= 10 V, ID = 35 A6.38.5m
= 4.0 V, ID = 35 A8.212m
= 10 V, ID = 1 mA 1.0 1.5 2.0 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 35 A 20 87 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DSS
VDS = 60 V, VGS = 0 V10
GSS
VGS = ±20 V, VDS = 0 V
iss
VDS = 10 V 5200 pF
oss
VGS = 0 V 1300 pF
rss
f = 1 MHz 480 pF
d(on)ID
d(off)
GS
GD
F(S-D)IF
rr
= 35 A75ns
r
GS(on)
V
= 10 V 1150 ns
VDD = 30 V 360 ns
f
G
RG = 10
Ω
480 ns
ID = 70 A95nC
VDD = 48 V13nC
GS(on)
V
= 10 V30nC
= 70 A, VGS = 0 V0.97V
IF = 70 A, VGS = 0 V70ns
rr
di/dt = 100 A /
s 140 nC
µ
10
±
Ω
Ω
A
µ
A
µ
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
VGS = 20 → 0 V
V
G
R
DD
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
V
DS
Starting T
L
V
DD
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
PG.
= 2 mA
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
G
R
G
= 10 Ω
V
V
GS
Wave Form
I
D
Wave Form
GS
10 %
0
I
D
10 %10
0
t
d(on)
V
90
%
I
trt
t
on
GS(on)
D
d(off)tf
%
90
90
%
%
t
off
L
R
V
DD
2
Data Sheet D13100EJ1V0DS00
TYPICAL CHARACTERISTICS (TA = 25 °C)
2SK3061
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
C
- Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)=280 A
= 10V)
100
DS(on)
R
10
- Drain Current - A
D
I
GS
I
D(DC)=70 A
Limited(@V
DC Dissipation Limited
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
- Total Power Dissipation - W
T
10
P
0
20 40 60 80 100 120 140 160
T
C
- Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
P
W
=
10
100
µs
µs
1
ms
10
ms
ms
200
100
- Drain Current - A
D
I
VGS =
10 V
VGS =
4.0 V
TC = 25
˚C
Single Pulse
1
0.1
1 10 100
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
TA = 125˚C
10
75˚C
25˚C
−25˚C
1
- Drain Current - A
D
I
0.1
Pulsed
DS
V
012345
V
GS
- Gate to Source Voltage - V
= 10 V
0
1
V
DS
- Drain to Source Voltage - V
2
3
4
Data Sheet D13100EJ1V0DS00
3
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