NEC 2SK3056-ZJ, 2SK3056 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3056

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Low On-State Resistance

DS(on)1

R

= 34 mΩ MAX. (VGS = 10 V, ID = 16 A)

DS(on)2

R

= 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A)

iss

• Low C

iss

: C

= 920 pF TYP.

• Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage (VGS = 0 V) V Gate to Source Voltage (V Gate to Source Voltage (V

DS

= 0 V) V

DS

= 0 V) V Drain Current (DC) I Drain Current (Pulse) Total Power Dissipation (T Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P Channel Temperature T Storage Temperature T Single Avalanche Current Single Avalanche Energy

Note2

DSS

GSS(AC)

GSS(DC)

D(DC)

D(pulse)

I

T

ch

stg

AS

I

AS

E

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3056

2SK3056-S

2SK3056-ZJ TO-263

60 V

±20 V

+20, −10 V

±32 A

±100 A

34 W

1.5 W

150 °C

–55 to +150 °C

16 A

25.6 mJ

TO-220AB

TO-262

Notes 1.

2.

PW ≤ 10 Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V

µ

s, Duty cycle ≤ 1 %

THERMAL RESISTANCE

Channel to Case R Channel to Ambient R

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D13095EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan

th(ch-C)

th(ch-A)

3.68 °C/W

83.3 °C/W

©

1998,1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3056

Drain to Source On-state Resi stance R

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= 10 V, ID = 16 A 24 34 m = 4.0 V, ID = 16 A 35 50 m

= 10 V, ID = 1 mA 1.0 1.5 2. 0 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 16 A 8.0 20 S Drain Leakage Current I Gate to Source Leakage Current I Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Body Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DSS

VDS = 60 V, VGS = 0 V 10

GSS

VGS = ±20 V, VDS = 0 V ±10

iss

VDS = 10 V 920 pF

oss

VGS = 0 V 280 pF

rss

f = 1 MHz 120 pF

d(on)ID

d(off)

F(S-D)IF

= 16 A 25 ns

r

GS(on)

V

= 10 V 300 ns

VDD = 30 V 70 ns

f

RG = 10

G

ID = 32 A 25 nC

GS

VDD = 48 V 3.3 nC

GD

VGS = 10 V 7.0 nC

Ω

120 ns

= 32 A, VGS = 0 V 1.0 V

rr

If = 32A, VGS = 0 V 50 ns

rr

di/dt = 100A/µs68nC

Ω Ω

A

µ

A

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

VGS = 20 → 0 V

PG.

V

R

G

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

R

G

= 10 Ω

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

0

%

90

10 %10

t

d(on)

trt

t

on

V

GS(on)

I

D

d(off)tf

90

%

90

%

t

off

R

L

V

DD

2

Data Sheet D13095EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK3056

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C - Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

1000

I

100

Limited (V

DS(on)

10

- Drain Current - A

D

I

R

=10 V)

GS

ID

(DC) = 32 A

D(pulse) = 100 A

Power Dissipation Limited

100 ms DC

10 ms

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

70

60

50

40

30

20

- Total Power Dissipation - W

10

T

P

0

40 60 80 100 120 140 160

20

C

- Case Temperature - ˚C

T

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

80

PW = 10 µs

100 µs

60

V

GS

=10 V

40

1 ms

- Drain Current - A

D

20

I

V

GS

= 4.0 V

TC = 25

˚C

Single Pulse

1

0.1

1 10 100

DS -

Drain to Source Voltage - V

V

FORWARD TRANSFER CHARACTERISTICS

100

10

TA = -25˚C

- Drain Current - A

1

D

I

25˚C 75˚C

125˚C

0.1 20468

GS

- Gate to Source Voltage - V

V

Pulsed V

DS

= 10 V

Pulsed

0

12 3

DS

- Drain to Source Voltage - V

V

Data Sheet D13095EJ1V0DS00

3