NEC 2SK3055 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK3055
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-State Resistance
DS(on)1
R
= 34 mΩ MAX. (VGS = 10 V, ID = 15 A)
DS(on)2
R
= 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
iss
• Low C
iss
: C
= 920 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage V
Gate to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Note1
C
= 25°C) P
A
= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
DSS
GSS(AC)
GSS(DC)
D(DC)
D(pulse)
I
T
T
ch
stg
AS
I
AS
E
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3055
60 V
±20 V
+20, −10 V
±30 A
±100 A
25 W
2.0 W
150 °C
–55 to +150 °C
15 A
22.5 mJ
Isolated TO-220
Notes 1.
2.
PW ≤ 10
Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
µ
s, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to Case R
Channel to Ambient R
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13094EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
th(ch-C)
th(ch-A)
5.0 °C/W
62.5 °C/W
©
1997,1999
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3055
Drain to Source On-state Resi stance R
Gate to Source Cut-off Voltage V
DS(on)1VGS
DS(on)2VGS
R
GS(off)VDS
= 10 V, ID = 15 A 24 34 m
= 4.0 V, ID = 15 A 35 50 m
= 10 V, ID = 1 mA 1.0 1.6 2.0 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 15 A 8.0 20 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DSS
VDS = 60 V, VGS = 0 V 10
GSS
VGS = ±20 V, VDS = 0 V ±10
iss
VDS = 10 V 920 pF
oss
VGS = 0 V 280 pF
rss
f = 1 MHz 120 pF
d(on)ID
d(off)
F(S-D)IF
= 15 A 25 ns
r
GS(on)
V
= 10 V 300 ns
VDD = 30 V 70 ns
f
RG = 10
G
ID = 30 A 25 nC
GS
VDD = 48 V 3.3 nC
GD
V
Ω
GS(on)
= 10 V 7.0 nC
120 ns
= 30 A, VGS = 0 V 1.0 V
rr
If = 30 A, VGS = 0 V 45 ns
rr
di/dt = 100 A/µs60nC
µ
µ
Ω
Ω
A
A
TEST CIRCUIT 1 AVALANCHE CAPABILITY
VGS = 20 → 0 V
PG.
V
R
G
DD
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
V
DS
Starting T
L
DD
V
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
PG.
= 2 mA
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
G
R
G
= 10 Ω
V
V
GS
Wave Form
I
D
Wave Form
GS
10 %
0
I
D
0
%
90
10 %10
t
d(on)
trt
t
on
V
GS(on)
I
D
d(off)tf
90
%
%
90
%
t
off
R
L
V
DD
2
Data Sheet
D13094EJ1V0DS00
TYPICAL CHARACTERISTICS (TA = 25 °C)
2SK3055
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
C - Case Temperature - ˚C
T
FORWARD BIAS SAFE OPERATING AREA
1000
I
100
Limited (V
DS(on)
R
ID
10
- Drain Current - A
D
I
(DC) = 30 A
=10 V)
GS
D(pulse) = 100 A
Power Dissipation Limited
100 ms
DC
10 ms
1 ms
100 µs
PW = 10 µs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
30
25
20
15
10
- Total Power Dissipation - W
5
T
P
0
40 60 80 100 120 140 160
20
C
- Case Temperature - ˚C
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
60
V
GS
=10 V
40
- Drain Current - A
D
20
I
V
GS
= 4.0 V
TC = 25
˚C
Single Pulse
1
0.1
1 10 100
DS -
Drain to Source Voltage - V
V
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = -25˚C
- Drain Current - A
1
D
I
25˚C
75˚C
125˚C
0.1
20468
GS
- Gate to Source Voltage - V
V
Pulsed
V
DS
= 10 V
Pulsed
0
12 3
DS
- Drain to Source Voltage - V
V
Data Sheet
D13094EJ1V0DS00
3
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