NEC 2SK3054 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

2SK3054

DESCRIPTION

The 2SK3054 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3054 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.

FEATURES

•Can be driven by a 2.5-V power source

•Low gate cut-off voltage

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS= 0 V) V

DS

Gate to Source Voltage (V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation P Channel Temperature T Storage Temperature T

Note

PW ≤ 10 ms, Duty cycle ≤ 50 %

= 0 V) V

Note

DSS

GSS

D(DC)

D(pulse)

I

ch

stg

T

–55 to +150 °C

50 V

±7V ±0.1 A ±0.2 A

150 mW 150 °C

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3054 SC-70

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D14209EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan

The mark

★★★★

shows major revised points.

©

1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3054

Drain Cut-off Current I Gate Leakage Current I Gate to Source Cut-off Voltage V

DSS

VDS = 50 V, VGS = 0 V 1

GSS

VGS = ±7 V, VDS = 0 V

GS(off)VDS

5

±

= 3 V, ID = 1 µA 0.9 1.2 1.5 V

Forward Transfer Admittance | yfs |VDS = 3 V, ID = 10 mA 20 38 mS Drain to Source On-state Resi stance R

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t

DS(on)1VGS

DS(on)2VGS

R

iss

oss

rss

d(on)

r

d(off)

f

= 2.5 V, ID = 10 mA 22 40 = 4.0 V, ID = 10 mA 14 20

VDS = 3 V 8 pF VGS = 0 V 7 pF f = 1 MHz 3 pF VDD = 3 V 15 ns ID = 20 mA 100 ns

GS(on)

V

= 3 V 30 ns

RG = 10 Ω, RL = 150

Ω

35 ns

TEST CIRCUIT SWITCHING TIME

D.U.T.

V

GS

10 %

0

D

I

10 %

0

t

d(on)

90 %

t

on

V

t

r

GS(on)

I

D

t

d(off)

t

off

90 %

10 %

t

f

PG.

GS

V

RG = 10 Ω

0

τ

τ = 1 s

µ

Duty Cycle ≤ 1 %

L

R

V

R

G

Wave Form

V

DD

I

D

Wave Form

A

µ

A

µ

Ω Ω

2

Data Sheet D14209EJ2V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - mA

0

1.0

1.5

2.0

40

0.5

Pulsed

V

GS

= 4.5 V

80

100

60

20

V

GS

= 4.0 V

V

GS

= 2.5 V

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

I

D

- Drain Current - mA

| y

fs

| - Forward Transfer Admittance - mS

V

DS

= 5 V

f = 1 kHz

10

100

200

100 200

1

2SK3054

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

300

250

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

200

60

150

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

A

- Ambient Temperature - ˚C

100

- Total Power Dissipation - mW

50

T

P

0

30 60 90 120 150 180

T

A

- Ambient Temperature - ˚C

FORWARD TRANSFER CHARACTERISTICS

Pulsed

100

10

T

A

★

1

= 150 ˚C

75 ˚C

25 ˚C

- Drain Current - mA

D

I

0.1

−25 ˚C

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

2.0

1.5

1.0

- Gate to Source Cut-off Voltage - V

GS(off)

V

0.5 0 50 100 150

T

ch

- Channel Temperature - ˚C

VDS = 3 V

D

= 1 µA

I

★

Data Sheet D14209EJ2V0DS00

0.01

V

DS

= 3 V

0

2

1

V

GS

34567

-

Gate to Source Voltage - V

3