NEC 2SK3053 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK3053
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor
designed for high current switching applications in consumer
instruments.
FEATURES
• Low On-State Resistance
= 45 mΩ MAX. (VGS = 10 V, ID = 13 A)
RDS(on)1
R
= 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A)
DS(on)2
• Low C
: C
iss
iss
= 790 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage V
Gate to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Note1
= 25°C) P
C
= 25°C) P
A
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
DSS
GSS(AC)
GSS(DC)
D(DC)
I
D(pulse)
T
T
ch
stg
I
AS
E
AS
+20, −10 V
–55 to +150 °C
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3053 Isolated TO-220
(Isolated TO-220)
60 V
±20 V
±25 A
±75 A
30 W
2.0 W
150 °C
12.5 A
15.6 mJ
Notes 1.
!
Document No. D12912EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
PW ≤ 10
Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
2.
s, Duty cycle ≤ 1 %
µ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
shows major revised points.
!!!!
©
1999, 2000
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3053
Drain to Source On-state Resi stance R
Gate to Source Cut-off Voltage V
DS(on)1VGS
DS(on)2VGS
R
GS(off)VDS
= 10 V, ID = 13 A 28 45 mΩ
= 4.0 V, ID = 13 A 46 70 mΩ
= 10 V, ID = 1 mA 1.0 1.6 2.0 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 13 A 8.0 16 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
!
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
!
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DSS
VDS = 60 V, VGS = 0 V 10
GSS
VGS = ±20 V, VDS = 0 V ±10
iss
VDS = 10 V 790 pF
oss
VGS = 0 V 240 pF
rss
f = 1 MHz 100 pF
d(on)ID
d(off)
GS
GD
F(S-D)IF
rr
= 13 A 20 ns
r
VGS = 10 V 200 ns
VDD = 30 V 65 ns
f
RG = 10 Ω 95 ns
G
ID = 25 A 20 nC
VDD = 48 V 3.0 nC
VGS = 10 V 6.5 nC
= 25 A, VGS = 0 V 1.0 V
IF = 25 A, VGS = 0 V 40 ns
rr
di/dt = 100 A/µs45nC
A
µ
A
µ
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
L
V
DD
PG.
RG = 25 Ω
50 Ω
VGS = 20 → 0 V
DSS
BV
I
AS
V
I
D
V
DD
DS
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
IG = 2 mA
50 Ω
R
L
V
DD
!
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
G
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
V
GS
L
R
V
GS
Wave Form
V
DD
I
D
Wave Form
10 %
0
90 %
I
D
10 %
0
t
d(on)
r
t
on
t
I
D
t
d(off)
t
off
90 %
90 %
10 %
t
f
2
Data Sheet D12912EJ3V0DS
TYPICAL CHARACTERISTICS (TA = 25 °C )
2SK3053
!
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
04020 60 100 14080 120 160
T
ch
- Channel Temperature -
FORWARD BIAS SAFE OPERATING AREA
1000
100
I
D(pulse)
100
ms
Power Dissipation Limited
10
ms
10
R
DS(on)
(at V
Limited
= 10 V)
GS
I
D(DC)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
30
25
20
15
10
- Total Power Dissipation - W
T
5
P
0
0
˚C
PW
=
10
µs
100
µs
1
ms
TC - Case Temperature - ˚C
8020 40 60 100 140120 160
- Drain Current - A
- Drain Current - A
D
D
I
I
1
C
= 25˚C
T
Single Pulse
0.1
0.1
DS
V
1000
100
10
1
0.1
- Transient Thermal Resistance - ˚C/W
th(t)
r
0.01
10
1 10 100
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
µ
100
1 m 10 m 100 m 1 10 100 1000
µ
PW - Pulse Width - s
Single Pulse
R
R
th(ch-A)
th(ch-C)
= 62.5 ˚C/W
= 4.17 ˚C/W
Data Sheet D12912EJ3V0DS
3
Loading...