NEC 2SK2858 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

2SK2858

DESCRIPTION

The 2SK2858 is a switching device which can be driven directly by a

2.5-V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.

FEATURES

• Can be driven by a 2.5-V power source

• Low gate cut-off voltage

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK2858 SC-70(SSP)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation P

★

Note

Channel Temperature T Storage Temperature T

Note

PW ≤ 10

µ

s, Duty Cycle ≤ 1 %

DSS

GSS

D(DC)

D(pulse)

I

ch

stg

±20 V ±0.1 A ±0.4 A

T

150 mW 150 °C

–55 to +150 °C

30 V

PACKAGE DRAWING (Unit : mm)

0.65

2.0 ± 0.2

0.65

0.9 ± 0.1

+0.1

–0

0.3

2

1

2.1 ± 0.1

1.25 ± 0.1

3

Marking

0 to 1.1

+0.1

0.15

–0.05

+0.1

–0

0.3

EQUIVALENT CIRCUIT

Gate

Gate Protection Diode

Marking: G24

Drain

Internal Diode

Source

Electrode Connection

1.Source

2.Gate

3.Drain

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D11706EJ2V0DS00 (2nd edition) Date Published August 1999 NS CP(K) Printed in Japan

The mark

★★★★

shows major revised points.

©

1996, 1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK2858

Drain Cut-off Current I Gate Leakage Current I Gate Cut-off Voltage V

DSS

VDS = 30 V, VGS = 0 V1

GSS

VGS = ±20 V, VDS = 0 V±10

GS(off)VDS

= 3 V, ID = 10 µA 1.0 1.4 1.8 V

A

µ

A

µ

Forward Transfer Admittance | yfs |VDS = 3 V, ID = 10 m A20mS

DS(on)1VGS

Drain to Source On-state Resi stance

R R

R Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t

DS(on)2VGS

DS(on)3VGS

iss

oss

rss

d(on)

r

d(off)

f

= 2.5 V, ID = 1 m A815 = 4 V, ID = 10 mA 4 8 = 10 V, ID = 10 mA 3 5

Ω Ω Ω

VDS = 3 V9pF VGS = 0 V12pF f = 1 MHz 2.1 pF VDD = 3 V40ns ID = 10 mA 55 ns

GS(on)

V

= 4 V68ns

Ω,

L

= 300

R

Ω

64 ns

RG = 10

2

Data Sheet D11706EJ2V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK2858

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

1

VDS = 3 V

0.1

0.01

0.001

- Drain Current - A

0.0001

D

I

0.00001

0.000001

1.0

30

60

90

TA - Ambient Temperature -

120

˚C

TRANSFER CHARACTERISTICS

= 125˚C

A

T

75˚C 25˚C

−25˚C

2.0

3.0

4.0 5.0

VGS - Gate to Sorce Voltage - V

150

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

400

300

200

- Drain Current - mA

D

I

100

0

1000

2

FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT

V

DS

= 3 V

100

★

10

| - Forward Transfer Admittance - mS

fs

| y

1

GS

V

TA = −25

25˚C 75˚C

125˚C

6

˚C

4

DS

- Drain to Source Voltage - V

V

0.01 0.10.0010.0001

ID - Drain Current - A

= 4 V

3.5 V

3 V

2.5 V

810

1

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

20

VGS = 2.5 V

15

T

A

= 125

˚C

75

˚C

25

10

−25

˚C ˚C

5

- Drain to Source On-state Resistance - Ω

10

0.0001 0.001 0.1

DS(on)

R

D

- Drain Current - A

I

0.01

15

10

★

5

- Drain to Source On-state Resistance - Ω

0

0.0001 0.1 1

DS(on)

R

Data Sheet D11706EJ2V0DS00

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

VGS = 4 V

T

A

= 125

˚C

75

˚C

25

˚C

−25

˚C

0.010.001

D

- Drain Current - A

I

3