NEC 2SK2857 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2857

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

The 2SK2857 is a switching device which can be driven directly
by a 5V power source.
The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as
actuator driver.

FEATURES

• Can be driven by a 5V power source.

• Low On-state resistance :

DS(on)1

R

R

= 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A)

DS(on)2

= 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation

Note1

Note2

Channel Temperature T
Storage Temperature T

DSS

GSS

D(DC)

D(pulse)

I

T

P

ch

stg

−55 to +150 °C

60 V

±20 V

±4 A

±16 A

2W

150 °C

PACKAGE DRAWING (Unit : mm)

4.5±0.1

.

0.42

±0.06

0.8MIN

1.6±0.2

2

1

1.5

3.0

0.47

±0.06

3

0.42

2.5±0.1

±0.06

1.5±0.1

4.0±0.25

+0.03

0.41

-0.05

Marking : NX

EQUIVALENT CIRCUIT

Drain

Internal

Gate

Gate
Protection
Diode

Source

Diode

Electrode
Connection

1.Souce

2.Drain

3.Gate

Notes1.

2.

Remark

PW ≤ 10

µ

s, Duty Cycle ≤ 1 %

Mounted on ceramic board of 16 cm

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D11648EJ2V0DS00 (2nd edition)
Date Published March 1999 NS CP (K)
Printed in Japan

2

× 0.7 mm

The mark

••••

shows major revised points.

©

1998,1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK2857

Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V

DSS

VDS = 60 V, VGS = 0 V 10

GSS

VGS = ±20 V, VDS = 0 V ±10

GS(off)

VDS = 10 V, ID = 1 mA 1.0 1.4 2.0 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 2 A 1 S

DS(on)1 VGS

Drain to Source On-state Resistance

R

R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DS(on)2 VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D) IF

rr

rr

= 4 V, ID = 1.5 A 150 220 m

= 10 V, ID = 2.5 A 110 150 m
VDS = 10 V
VGS = 0 V

f = 1 MHz

VDD = 25 V, ID = 1 A

V
R

GS(on)

L

= 25

= 10 V, R

G

Ω

= 10

Ω

265 pF
125 pF

56 pF

8ns
11 ns
52 ns
22 ns

VDS = 48 V
VGS = 10 V

D

= 4 A

I

10.6 nC

0.7 nC

3.5 nC

= 4 A, VGS = 0 V 0.86 V
IF = 4 A, VGS = 0 V
di/dt = 50 A /

s

µ

49 ns

26.6 nC

A

µ

A

µ

Ω
Ω

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

L

R

V

PG.

V

GS

RG = 10 Ω

0

τ

τ = 1 s

µ

Duty Cycle ≤ 1 %

RG

VDD

Wave Form

ID

Wave Form

VGS

GS

10 %

0

0

10 %

td(on)

90 %

tr

ton

D

I

V

GS(on)

ID

td(off)

90 %

90 %

10 %

tf

toff

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = 2 mA

PG.

50 Ω

RL

VDD

2

Data Sheet D11648EJ2V0DS00

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK2857

••••

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

30

TA - Ambient Temperature -

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

2.0
8 V

1.6

1.2

0.8

- Drain Current - A

D

I

0.4

6 V
4 V

60

VGS = 2 V

90

120

˚C

150

FORWARD BIAS SAFE OPERATING AREA

100

10

Limited (@V

DS(on)

R

1

- Drain Current - A

D

I

TA = 25˚C
Single Pulse
Mounted on Ceramic
Board of 16cm x 0.7mm

0.1
V

DS

TRANSFER CHARACTERISTICS

20

VDS = 10 V

10

1

- Drain Current - A

D

0.1

I

V)

0

1

=

GS

2

1

PW

=

10

ms

100 ms

DC

10 100

- Drain to Source Voltage - V

= 125˚C

A

T

75˚C
25˚C

−25˚C

1 ms

0

20

0.4

FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT

0.8

V

DS

- Drain to Source Voltage - V

1.2

VDS = 10 V

10

TA = −25

1

| - Forward Transfer Admittance - S

fs

| y

0.1

0.1

1

ID - Drain Current - A

25
75

125

1.6 2.0

˚C
˚C
˚C

˚C

0.01
1

23

54

VGS - Gate to Sorce Voltage - V

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

240

GS = 4 V

V

200

160

120

TA = 125

75

25

−25

˚C

˚C

˚C
˚C

80

40

0

10

20

0.1 10

RDS(on) - Drain to Source On-state Resistance - mΩ

1

I

D - Drain Current - A

20

Data Sheet D11648EJ2V0DS00

3