NEC 2SK2826-ZJ, 2SK2826-S Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK2826

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Super Low On-State Resistance

DS(on)1

R

= 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A)

DS(on)2

R

= 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)

iss

• Low C

iss

: C

= 7200 pF (TYP.)

• Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage (VGS = 0 V) V Gate to Source Voltage (V Gate to Source Voltage (V

DS

= 0 V) V

DS

= 0 V) V

Drain Current (DC) I

Note1

Drain Current (Pulse) Total Power Dissipation (T Total Power Dissipation (T

C

= 25°C) P

A

= 25°C) P Channel Temperature T Storage Temperature T

Note2

Single Avalanche Current Single Avalanche Energy

Note2

DSS

GSS(AC)

GSS(DC)

D(DC)

D(pulse)

I

T

ch

stg

AS

I

AS

E

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK2826

2SK2826-S

2SK2826-ZJ TO-263

60 V

±20 V

+20, –10 V

±70 A

±280 A

100 W

1.5 W

150 °C

–55 to + 150 °C

70 A

490 mJ

TO-220AB

TO-262

Notes 1.

PW ≤ 10

2.

Starting Tch = 25 °C, R

µ

s, Duty cycle ≤ 1 %

A

= 25 Ω, VGS = 20 V → 0 V

THERMAL RESISTANCE

Channel to Case Rth(ch-C) 1.25 °C/W Channel to Ambient R

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D11273EJ2V0DS00 (2nd edition) Date Published April 1999 NS CP(K) Printed in Japan

th

(ch-A) 83.3 °C/W

The mark

••••

shows major revised points.

©

1998

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK2826

Drain to Source On-state Resi stance R

•

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= 10 V, ID = 35 A 5.5 6.5 m = 4.0 V, ID = 35 A 7.0 9.7 m

= 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 35 A 20 94 S Drain Leakage Current I Gate to Source Leakage Current I Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t

•

Rise Time t

•

Turn-off Delay Time t

•

Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Body Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DSS

VDS = 60 V, VGS = 0 V 10

GSS

VGS = ±20 V, VDS = 0 V ±10

iss

VDS = 10 V 7200 pF

oss

VGS = 0 V 2000 pF

rss

f = 1 MHz 700 pF

d(on)ID

d(off)

GS

GD

F(S-D)IF

rr

= 35 A 100 ns

r

GS(on)

V

= 10 V 1200 ns

VDD = 30 V 440 ns

f

RG = 10

G

ID = 70 A 150 nC

Ω

520 ns

VDD = 48 V 20 nC VGS = 10 V 40 nC

= 70 A, VGS = 0 V 0.97 V

IF = 70 A, VGS = 0 V 80 ns

rr

di/dt = 100A/µ s 250 nC

Ω Ω

A

µ

A

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

VGS = 20V → 0 V

PG.

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

G

= 2 mA

PG.

I

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

PG.

V

GS

0

t

t = 1 µs Duty Cycle ≤ 1 %

G

R

D.U.T.

R

G

= 10 Ω

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

trt

t

on

GS(on)

D

d(off)tf

%

90

%

t

off

L

R

V

DD

2

Data Sheet D11273EJ2V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK2826

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C - Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

1000

I

D(pulse)

100

10

- Drain Current - A

D

I

1

0.1

Limited

DS(on)

R

(at VGS =10 V)

TC = 25

˚C

Single Pulse

DS -

V

I

D(DC)

Power Dissipation Limited

100 ms

DC

1 10 100

Drain to Source Voltage - V

10 ms

1 ms

PW = 10 µs

100 µs

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

140

120

100

80

60

40

- Total Power Dissipation - W

20

T

P

0

40 60 80 100 120 140 160

20

C

- Case Temperature - ˚C

T

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

100

80

60

V

GS

=10 V

40

- Drain Current - A

D

I

V

GS

= 4.0 V

20

0

0.2

DS

- Drain to Source Voltage - V

V

0.4

0.6

Pulsed

0.8

FORWARD TRANSFER CHARACTERISTICS

1000

100

10

- Drain Current - A

D

I

1

TA = -25˚C

25˚C 75˚C

125˚C

0

2

GS

- Gate to Source Voltage - V

V

4

Pulsed

V

DS

= 10 V

68

Data Sheet D11273EJ2V0DS00

3