NEC 2SK2724 Datasheet

DATA SHEET

Drain

Gate

Gate Protection Diode

Source

Body Diode

MOS FIELD EFFECT POWER TRANSISTORS

2SK2724

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Low On-Resistance

DS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A)

R RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)

• Low Ciss Ciss =1 200 pF Typ.

• Built-in G-S Protection Diode

• Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PACKAGE DIMENSIONS (in millimeter)

10.0 ±0.3

15.0 ±0.3

123

MP-45F (ISOLATED TO-220)

3.2 ±0.2

3 ±0.1

4 ±0.2

1.3 ±0.20.7 ±0.1

1.5 ±0.2

2.542.54

4.5 ±0.2

12.0 ±0.213.5 MIN.

0.65 ±0.1

Gate

1. Drain

2. Source

3.

2.7 ±0.2

2.5 ±0.1

Document No. D10515EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan

Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±35 A Drain Current (Pulse)* I Total Power Dissipation (TA = 25 ˚C) Total Power Dissipation (TC = 25 ˚C) Channel Temperature T Storage Temperature Tstg –55 to +150 ˚C

µ

* PW ≤ 10

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device.

s, duty cycle ≤ 1 %

The information in this document is subject to change without notice.

D(pulse) ±140 A

PT 2.0 W PT 30 W

ch 150 ˚C

©

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Drain to Source On-State Resistance

Gate to Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance |yfs|VDS = 10 V, ID = 18 A 10 23 S Drain Leakage Current IDSS VDS = 60 V, VGS = 0 10 Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 Input Capacitance Ciss VDS = 10 V, 1 200 pF Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) ID = 18 A, 35 ns Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Total Gate Charge QG ID = 35 A, 50 nC Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) IF = 35 A, VGS = 0 1.0 V Reverse Recovery Time trr IF = 35 A, VGS = 0, 70 ns Reverse Recovery Charge Qrr

RDS(on)1 VGS = 10 V, ID = 18 A 20 27 mΩ RDS(on)2 VGS = 4 V, ID = 18 A 33 40 mΩ

VGS = 0, f = 1 MHz

570 pF 270 pF

VGS(on) = 10 V, VDD = 30 V,

RG = 10 Ω

280 ns 160 ns 170 ns

VDD = 48 V, VGS = 10 V

5.0 nC 22 nC

di/dt = 100 A/µs

130 nC

2SK2724

µ

A

µ

A

Test Circuit 1 Switching Time Test Circuit 2 Gate Charge

PG.

V

GS

0

t

t = 1 s

µ

Duty Cycle ≤ 1 %

R

G

D.U.T.

R

G

= 10 Ω

L

R

V

DD

V

GS

Wave Form

I

D

Wave Form

V

I

D

GS

0

10 %

t

d(on)tr

90 %

t

on

V

GS(on)

I

D

t

d(off)tf

90 %

t

off

90 %

10 %

PG.

D.U.T.

IG = 2 mA

50 Ω

R

L

V

DD

2

2SK2724

FORWARD BIAS SAFE OPERATING AREA

V

DS -

Drain to Source Voltage - V

I

D

- Drain Current - A

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

FORWARD TRANSFER CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

I

D

- Drain Current - A

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

T

C

- Case Temperature - ˚C

dT - Percentage of Rated Power - %

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

T

C

- Case Temperature - ˚C

P

T

- Total Power Dissipation - W

0

20

0

20 40 60 80 100 120 140 160

20

40

60

80

100

40 60 80 100 120 140 160

35

30

25

20

15

10

5

0

2

3

4

100

1

10

100

200

1

0

Pulsed

51015

V

GS

= 20 V

VGS = 4 V

VGS = 10 V

Pulsed

Tch = –25 ˚C

25 ˚C

125 ˚C

VDS = 10 V

1

10

100

1 000

0.1 1 10 100

I

D(pulse)

= 140 A

I

D(DC)

= 35 A

Power Dissipation

Limited(P

T

= 30 W)

R

DS(on)

Limited (V

GS

= 10 V)

PW = 1 ms

PW = 10 ms

PW = 200 ms

Tc = 25 ˚C Single Pulse

1 000

PW = 100 s

µ

3