NEC 2SK2514 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2514 is N-Channel MOS Field Effect Transistor designed

for high current switching applications.

2SK2514

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Super Low On-Resistance

RDS (on)1 ≤ 15 mΩ (VGS = 10 V, ID = 25 A)

DS (on)2 ≤ 23 mΩ (VGS = 4 V, ID = 25 A)

R

• Low Ciss Ciss = 2 100 pF TYP.

• Built-in G-S Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 60 V

Gate to Source Voltage V

Drain Current (DC) ID (DC) ±50 A
Drain Current (pulse)* ID (pulse) ±200 A

Total Power Dissipation (Tc = 25 ˚C) PT1 150 W

Total Power Dissipation (T

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C

µ

* PW ≤ 10

s, Duty Cycle ≤ 1 %

A = 25 ˚C) PT2 3.0 W

GSS ±20 V

15.7 MAX.

1.06.0

123

19 MIN. 20.0±0.2

3.0±0.2

5.45 5.45

Gate

4

1.0±0.2

MP-88

Drain

3.2±0.2

4.5±0.2

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Body
Diode

4.7 MAX.

1.5

7.0

2.8±0.10.6±0.12.2±0.2

Document No. D10296EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

Gate Protection
Diode

Source

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2514

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS (on)1 11 15 VGS = 10 V, ID = 25 A

Drain to Source On-Resistance RDS (on)2 16 23 VGS = 4 V, ID = 25 A

Gate to Source Cutoff Voltage VGS (off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 15 VDS = 10 V, ID = 25 A

Drain Leakage Current IDSS 10 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0

Input Capacitance Ciss 2 100 VDS = 10 V

Output Capacitance Coss 1 100 VGS = 0

Reverse Transfer Capacitance Crss 500 f = 1 MHz

Turn-On Delay Time td (on) 45 ID = 25 A

Rise Time tr 390 VGS(on) = 10 V

Turn-Off Delay Time td (off) 320 VDD = 30 V

Fall Time tf 360 R

Total Gate Charge QG 92 ID = 50 A

Gate to Source Charge QGS 6.0 VDD = 48 V

Gate to Drain Charge QGD 37 VGS = 10 V

Body Diode Forward Voltage VF (S-D) 1.0 IF = 50 A, VGS = 0

Reverse Recovery Time trr 90 IF = 50 A, VGS = 0

Reverse Recovery Charge Qrr 175 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V

S

µ

A

µ

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

= 10 Ω

G

Test Circuit 1 Switching Time

D.U.T.

RG

G = 10 Ω

R

VGS
0

t = 1 s

PG.

t

µ

R

VDD

L

VGS

Wave Form

ID

Wave Form

VGS

10 %

0

ID

90 %

10 %

0

td (on) tr td (off) tf

ton toff

90 %

GS (on)

V

90 %

ID

Test Circuit 2 Gate Charge

PG.

10 %

D.U.T.

I

G = 2 mA

50

Ω

RL

VDD

Duty Cycle ≤ 1 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2514

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

C - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

1 000

ID(pulse)

100

R

DS(on)

Limited

ID(DC)

Dissipation Limited

10

ID - Drain Current - A

PW = 100 s

1 ms

10 ms

DC

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

175

150

125

100

75

50

25

PT - Total Power Dissipation - W

0

20

40 60 80 100 120 140 160

T

C - Case Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

Pulsed

200

µ

100

VGS = 20 V

VGS = 10 V

VGS = 4 V

ID - Drain Current - A

TC = 25 ˚C
Single Pulse

1

0.1

1 10 100

V

DS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

1 000

100

TA = 125 ˚C

75 ˚C
25 ˚C

–25 ˚C

10

ID - Drain Current - A

1.0

0

246

GS - Gate to Source Voltage - V

V

Pulsed

VDS = 10 V

0

1.0

V

DS - Drain to Source Voltage - V

2.0

3.0

4.0

8

3