NEC 2SK2512 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2512 is N-Channel MOS Field Effect Transistor designed

for high current switching applications.

2SK2512

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Low On-Resistance
RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A)

DS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A)

R

• Low Ciss Ciss = 2 100 pF TYP.

• Built-in G-S Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±45 A
Drain Current (pulse)* ID(pulse) ±180 A
Total Power Dissipation (T
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
* PW ≤ 10 µs, Duty Cycle ≤ 1 %

c = 25 ˚C) PT1 35 W

GSS ±20 V

stg –55 to +150 ˚C

10.0±0.3 4.5±0.2

15.0±0.3

0.7±0.1

2.54

123

MP-45F (ISOLATED TO-220)

3.2±0.2

3±0.14±0.2

1.5±0.2

2.54

Drain

2.7±0.2

12.0±0.213.5MIN.

2.5±0.11.3±0.2

0.65±0.1

1. Gate

2. Drain

3. Source

The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

Document No. D10291EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

Gate
Gate

Protection
Diode

Source

Body
Diode

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2512

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on)1 11 15 VGS = 10 V, ID = 23 A
Drain to Source On-Resistance RDS (on)2 16 23 VGS = 4 V, ID = 23 A
Gate to Source Cutoff Voltage VGS (off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs |1520 VDS = 10 V, ID = 23 A
Drain Leakage Current IDSS 10 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 2 100 VDS = 10 V
Output Capacitance Coss 1 100 VGS = 0
Reverse Transfer Capacitance Crss 500 f = 1 MHz
Turn-On Delay Time td (on) 45 ID = 23 A
Rise Time tr 380 VGS (on) = 10 V
Turn-Off Delay Time td (off) 320 VDD = 30 V
Fall Time tf 320 RG = 10 Ω
Total Gate Charge QG 101 ID = 45 A
Gate to Source Charge QGS 7VDD = 48 V
Gate to Drain Charge QGD 40 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 45 A, VGS = 0
Reverse Recovery Time trr 100 IF = 45 A, VGS = 0
Reverse Recovery Charge Qrr 180 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V
S

µ

A

µ

A
pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

V

ns
nC

Test Circuit 1 Switching Time

D.U.T.

R

G

R

G

= 10 Ω

V

GS

0

t = 1 s

PG.

t

µ

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

90 %

10 %

0

t

d (on)trtd (off)tf

t

on

90 %

GS (on)

V

90 %

I

D

10 %

t

off

L

R

V

DD

Test Circuit 2 Gate Charge

D.U.T.

G

= 2 mA

I

PG.

50 Ω

Duty Cycle ≤ 1 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

R

L

V

DD

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

g

2SK2512

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C - Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

1000

I

D(pulse)

100

I

D(DC)

R

Limited

DS(on)

200 ms

10

ID - Drain Current - A

DC

PW = 100 s

1 ms

10 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

70

60

50

40

30

20

10

PT - Total Power Dissipation - W

0

40 60 80 100 120 140 160

20

C - Case Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

Pulsed

200

VGS = 20 V

VGS = 10 V

µ

100

VGS = 4 V

ID - Drain Current - A

TC = 25 ˚C
Single Pulse

1

0.1

1 10 100

DS - Drain to Source Voltage - V

V

FORWARD TRANSFER CHARACTERISTICS

1 000

100

TA = 125 ˚C

75 ˚C

10

25 ˚C

–25 ˚C

ID - Drain Current - A

1

0

246

GS - Gate to Source Volta

V

Pulsed

VDS = 10 V

e - V

0

1

DS - Drain to Source Voltage - V

V

2

3

4

8

3