NEC 2SK2511 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2511 is N-Channel MOS Field Effect Transistor designed

for high current switching applications.

2SK2511

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Super Low On-Resistance

RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A)

DS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A)

R

• Low Ciss Ciss = 1 210 pF TYP.

• Built-in G-S Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

Gate to Source Voltage V

Drain Current (DC) ID (DC) ±40 A
Drain Current (pulse)* ID (pulse) ±160 A

Total Power Dissipation (Tc = 25 ˚C) PT1 80 W

Total Power Dissipation (T

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C

µ

* PW ≤ 10

s, Duty Cycle ≤ 1 %

A = 25 ˚C) PT2 3.0 W

VDSS 60 V

GSS ±20 V

15.7 MAX.

1.06.0

123

19 MIN. 20.0±0.2

3.0±0.2

5.45 5.45

Gate

Gate Protection
Diode

4

1.0±0.2

MP-88

Drain

Source

3.2±0.2

4.5±0.2

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Body
Diode

4.7 MAX.

1.5

7.0

2.8±0.10.6±0.12.2±0.2

The diode connected between the gate and source of the

transistor serves as a protector against ESD. When this device is

actually used, an additional protection circuit is externally re-

quired if a voltage exceeding the rated voltage may be applied to

this device.

Document No. D10295EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

y Cy

2SK2511

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS (on)1 22 27 VGS = 10 V, ID = 20 A

Drain to Source On-Resistance RDS (on)2 32 40 VGS = 4 V, ID = 20 A

Gate to Source Cutoff Voltage VGS (off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 10 VDS = 10 V, ID = 20 A

Drain Leakage Current IDSS 10 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0

Input Capacitance Ciss 1 210 VDS = 10 V

Output Capacitance Coss 610 VGS = 0

Reverse Transfer Capacitance Crss 270 f = 1 MHz

Turn-On Delay Time td (on) 32 ID = 20 A

Rise Time tr 300 VGS = 10 V

Turn-Off Delay Time td (off) 160 VDD = 30 V

Fall Time tf 220 R

Total Gate Charge QG 50 ID = 40 A

Gate to Source Charge QGS 4.5 VDD = 48 V

Gate to Drain Charge QGD 21 VGS = 10 V

Body Diode Forward Voltage VF (S-D) 1.0 IF = 40 A, VGS = 0

Reverse Recovery Time trr 70 IF = 40 A, VGS = 0

Reverse Recovery Charge Qrr 140 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V

S

µ

A

µ

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

= 10 Ω

G

Test Circuit 1 Switching Time

D.U.T.

RG

G = 10 Ω

R

VGS
0

t = 1 s
Dut

PG.

t

µ

cle ≤ 1 %

R

VDD

L

VGS

Wave Form

ID

Wave Form

VGS

10 %

0

ID

90 %

10 %

0

td (on) tr td (off) tf

ton toff

90 %

GS (on)

V

90 %

ID

10 %

Test Circuit 2 Gate Charge

D.U.T.

I

G = 2 mA

PG.

50

Ω

RL

VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2511

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C

- Case Temperature - °C

T

FORWARD BIAS SAFE OPERATING AREA

1000

I

D(pulse)

100

I

D(DC)

Limited

DS(on)

R

10

- Drain Current - A

D

I

TC = 25 °C
Single Pulse

1

0.1

1 10 100

DS

- Drain to Source Voltage - V

V

10ms

DC

PW = 100 s

µ

1ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

140

120

100

80

60

40

- Total Power Dissipation - W

T

20

P

0

20

40 60 80 100 120 140 160

C

- Case Temperature - °C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

200

100

- Drain Current - A

D

I

0

1

DS

- Drain to Source Voltage - V

V

V

GS

= 20 V

2

V

GS

V

3

Pulsed

= 10 V

GS

= 4 V

4

FORWARD TRANSFER CHARACTERISTICS

TA = –25 °C

25 °C
75 °C

100

125 °C

10

- Drain Current - A

D

I

1.0

0

510 15

GS

- Gate to Source Voltage - V

V

Pulsed

VDS = 10 V

3