NEC 2SK2498 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
2SK2498 is N-Channel MOS Field Effect Transistor designed for
high current switching applications.
2SK2498
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Super Low On-State Resistance
RDS (on)1 ≤ 9 mΩ (VGS = 10 V, ID = 25 A)
DS (on)2 ≤ 14 mΩ (VGS = 4 V, ID = 25 A)
R
• Low Ciss Ciss = 3400 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
• Buit-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±50 A
Drain Current (pulse)* I
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 50 A
Single Avalanche Energy** E
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
D(pulse) ±200 A
ch 150 ˚C
AS 250 mJ
10.0±0.3 4.5±0.2
15.0±0.3
0.7±0.1
2.54
123
MP-45F (ISOLATED TO-220)
Gate
3.2±0.2
3±0.14±0.2
1.5±0.2
2.54
Drain
2.7±0.2
12.0±0.213.5MIN.
2.5±0.11.3±0.2
0.65±0.1
1. Gate
2. Drain
3. Source
Body
Diode
Document No. D10044EJ1V0DS00 (1st edition)
Date Published July 1995 P
Printed in Japan
Gate Protection
Diode
Source
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
y Cy
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source On-Resistance RDS (on)1 7.3 9.0 mΩ VGS = 10 V, ID = 25 A
RDS (on)2 11 14 mΩ VGS = 4 V, ID = 25 A
Gate to Source Cutoff Voltage VGS (off) 1.0 1.5 2.0 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 20 58 S VDS = 10 V, ID = 25 A
Drain Leakage Current IDSS 10
Gate to Source Leakage Current IGSS ±10 nA VGS = ±20 V, VDS = 0
Input Capacitance Ciss 3400 pF VDS = 10 V
Output Capacitance Coss 1600 pF VGS = 0
Reverse Transfer Capacitance Crss 770 pF f = 1 MHz
Turn-On Delay Time td (on) 55 ns ID = 25 A
Rise Time tr 360 ns VGS(on) = 10 V
Turn-Off Delay Time td (off) 480 ns VDD = 30 V
Fall Time tf 360 ns RG = 10 Ω
Total Gate Charge QG 152 nC ID = 50 A
Gate to Source Charge QGS 11 nC VDD = 48 V
Gate to Drain Charge QGD 60 nC VGS = 10 V
Body Diode Forward Voltage VF (S-D) 0.92 V IF = 50 A, VGS = 0
Reverse Recovery Time trr 105 ns IF = 50 A, VGS = 0
Reverse Recovery Charge Qrr 265
µ
A VDS = 60 V, VGS = 0
µ
C di/dt = 100 A/µs
2SK2498
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
RG
G = 10 Ω
R
D.U.T.
V
GS
= 20 → 0 V
PG
G
= 25 Ω
R
V
DD
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
Starting T
L
PG.
V
DD
VGS
0
t = 1 s
µ
Dut
t
cle ≤ 1 %
V
DS
ch
Test Circuit 3 Gate Charge
D.U.T.
I
G
PG.
= 2 mA
50 Ω
R
L
V
DD
R
VDD
L
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2498
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
100
10
R
DS(on)
(at V
Limited
= 10 V)
ID(DC)
GS
Power Dissipation Limited
DC
ID - Drain Current - A
TC = 25 ˚C
Single Pulse
1
0.1
1 10 100
V
DS - Drain to Source Voltage - V
10ms
100ms
PW=10 s
100 s
1 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
PT - Total Power Dissipation - W
0
20
40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
200
µ
µ
160
VGS = 20 V
VGS = 10 V
120
80
VGS = 4 V
ID - Drain Current - A
40
0
1
V
DS - Drain to Source Voltage - V
2
3
4
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
TA = –25 ˚C
25 ˚C
ID - Drain Current - A
125 ˚C
1
0
2
GS - Gate to Source Voltage - V
V
46
Pulsed
VDS = 10 V
8
3
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