NEC 2SK2483 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2483 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
2SK2483
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 1 200 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±3.5 A
Drain Current (pulse)* ID(pulse) ±10.5 A
Total Power Dissipation (T
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
Single Avalanche Current** IAS 3.5 A
Single Avalanche Energy** EAS 147 mJ
µ
* PW ≤ 10
** Starting Tch = 25 ˚C, R G = 25 Ω, VGS = 20 V → 0
s, Duty Cycle ≤ 1 %
c = 25 ˚C) PT1 40 W
VDSS 900 V
GSS ±30 V
stg –55 to +150 ˚C
10.0±0.3 4.5±0.2
15.0±0.3
0.7±0.1
2.54
123
MP-45F (ISOLATED TO-220)
3.2±0.2
3±0.14±0.2
1.5±0.2
2.54
Drain
2.7±0.2
12.0±0.213.5MIN.
2.5±0.11.3±0.2
0.65±0.1
1. Gate
2. Drain
3. Source
Document No. D10275EJ1V0DS00 (1st edition)
Date Published September 1995 P
Printed in Japan
Gate
Source
Body
Diode
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2483
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 2.8 VGS = 10 V, ID = 2.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.0 VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1 200 VDS = 10 V
Output Capacitance Coss 170 VGS = 0
Reverse Transfer Capacitance Crss 30 f = 1 MHz
Turn-On Delay Time td (on) 20 ID = 2.0 A
Rise Time tr 10 VGS = 10 V
Turn-Off Delay Time td (off) 70 VDD = 150 V
Fall Time tf 15 RG = 75 Ω
Total Gate Charge QG 40 ID = 3.5 A
Gate to Source Charge QGS 7VDD = 450 V
Gate to Drain Charge QGD 17 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 0.9 IF = 3.5 A, VGS = 0
Reverse Recovery Time trr 580 IF = 3.5 A, VGS = 0
Reverse Recovery Charge Qrr 3.0 di/dt = 50 A/µs
UNIT
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G
= 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BV
DSS
I
AS
I
D
V
DD
V
Starting T
Test Circuit 3 Gate Charge
D.U.T.
I
G
PG.
= 2 mA
50 Ω
R
V
Test Circuit 2 Switching Time
L
R
V
DD
PG.
V
GS
G
R
G
= 10 Ω
L
R
V
DD
0
D.U.T.
DS
t
t = 1us
ch
L
DD
Duty Cycle ≤ 1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
0
I
D
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2483
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
PW = 100 s
I
10
Limited
DS(on)
R
1
- Drain Current - A
D
I
I
D(DC)
Power Dissipation Limited
D(pulse)
10 ms
100 ms
1 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
- Total Power Dissipation - W
T
10
P
0
40 60 80 100 120 140 160
20
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
µ
V
GS
= 20 V
10 V
5
- Drain Current - A
D
I
8 V
6 V
Pulsed
TC = 25 ˚C
Single Pulse
0.1
1
10 100 1000
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
10
1.0
- Drain Current - A
D
I
0.1
0
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
51015
VGS - Gate to Source Voltage - V
Pulsed
0
4
8
12
16
VDS - Drain to Source Voltage - V
3
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