NEC 2SK2482 Datasheet

Body
Diode

Source

Drain

Gate

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2482 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

2SK2482

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Low On-Resistance

RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A)

• Low Ciss Ciss = 900 pF TYP.

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) I
Drain Current (pulse)* ID (pulse) ±12 A
Total Power Dissipation (Tc = 25 ˚C) PT1 100 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 73.5 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T

ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

A = 25 ˚C) PT2 3.0 W

VDSS 900 V

D (DC) ±5.0 A

AS 5.0 A

15.7 MAX.

1.06.0

123

19 MIN. 20.0±0.2

3.0±0.2

5.45 5.45

4

1.0±0.2

MP-88

3.2±0.2

4.5±0.2

1. Gate

2. Drain

3. Source

4. Fin (Drain)

4.7 MAX.

1.5

7.0

2.8±0.10.6±0.12.2±0.2

Document No. D10274EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2482

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 3.2 4.0 VGS = 10 V, ID = 3.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.0 VDS = 20 V, ID = 3.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 900 VDS = 10 V
Output Capacitance Coss 130 VGS = 0
Reverse Transfer Capacitance Crss 25 f = 1 MHz
Turn-On Delay Time td (on) 17 ID = 3.0 A
Rise Time tr 8VGS = 10 V
Turn-Off Delay Time td (off) 60 VDD = 150 V

Fall Time tf 10 RG = 10 Ω
Total Gate Charge QG 30 ID = 5.0 A

Gate to Source Charge QGS 5VDD = 450 V
Gate to Drain Charge QGD 13 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 5.0 A, VGS = 0
Reverse Recovery Time trr 780 IF = 5.0 A, VGS = 0

Reverse Recovery Charge Qrr 4.2

UNIT

Ω

V
S

µ

A

nA
pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

V

ns

µ

C

di/dt = 50 A/µs

Test Circuit 1 Avalanche Capability

D.U.T.

R

G

= 25 Ω

PG

VGS = 20 - 0 V

50 Ω

BV

DSS

I

AS

I

D

V

DD

V

DS

Starting T

L

DD

V

ch

Test Circuit 2 Switching Time

D.U.T.

R

PG.

V

GS

0

t

t = 1 us
Duty Cycle ≤ 1 %

G

= 10 Ω

R

G

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

90 %

10 %

0

t

d (on)trtd (off)tf

t

on

90 %

GS (on)

V

90 %

I

D

10 %

t

off

R

L

V

DD

Test Circuit 3 Gate Charge

D.U.T.

I

G

= 2 mA

PG.

50

Ω

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

R

L

V

DD

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2482

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

C

- Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100

10

= 10 V)

GS

I

D(DC)

Power Dissipation Limited

Limited (at V

DS(on)

1

- Drain Current - A

D

I

R

I

D(pulse)

10 ms

PW = 100 s

1 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

140

120

100

80

60

40

- Total Power Dissipation - W

T

20

P

0

40 60 80 100 120 140 160

20

T

C

- Case Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

Pulsed

10

µ

VGS = 20 V

10 V

8 V

5

- Drain Current - A

D

I

6 V

TC = 25 ˚C
Single Pulse

0.1
1

10 100 1000

V

DS

- Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

100

TA = –25 ˚C

25 ˚C

10

75 ˚C

125 ˚C

1.0

- Drain Current - A

D

I

0.1

0

51015

V

GS

- Gate to Source Voltage - V

Pulsed

VDS = 10 V

0

10

V

DS

- Drain to Source Voltage - V

20

30

40

3