NEC 2SK2481 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK2481
DESCRIPTION
The 2SK2481 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 900 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) I
Drain Current (pulse)* ID(pulse) ±12 A
Total Power Dissipation (Tc = 25 ˚C) PT1 70 W
Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 4.0 A
Single Avalanche Energy** E
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
VDSS 900 V
D(DC) ±4.0 A
ch 150 ˚C
AS 65.9 mJ
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
3.6 ± 0.2
10.0
3.0 ± 0.3
4
123
1.3 ± 0.2
0.75 ± 0.1
Gate
5.9 MIN.
6.0 MAX.
2.542.54
MP-25 (TO-220)
Drain
Source
4.8 MAX.
1.3 ± 0.2
15.5 MAX.
0.5 ± 0.2
12.7 MIN.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
Body
Diode
2.8 ± 0.2
Document No. D10273EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2481
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-State Resistance RDS(on) 3.2 4.0 VGS = 10 V, ID = 2.0 A
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.0 VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 900 VDS = 10 V
Output Capacitance Coss 130 VGS = 0
Reverse Transfer Capacitance Crss 25 f = 1 MHz
Turn-On Delay Time td(on) 17 ID = 2.0 A
Rise Time tr 7 VGS = 10 V
Turn-Off Delay Time td(off) 63 VDD = 150 V
Fall Time tf 8 R
Total Gate Charge QG 30 ID = 4.0 A
Gate to Source Charge QGS 5 VDD = 450 V
Gate to Drain Charge QGD 13 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 IF = 4.0 A, VGS = 0
Reverse Recovery Time trr 710 IF = 4.0 A, VGS = 0
Reverse Recovery Charge Qrr 3.5 di/dt = 50 A/µs
UNIT
Ω
V
S
µ
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
A
= 10 Ω
G
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDS
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
I
G = 2 mA
PG.
50 Ω
L
V
RL
VDD
Test Circuit 2 Switching Time
D.U.T.
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
L
R
DD
PG.
RG
G = 10 Ω
R
VDD
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SK2481
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
= 10 V)
GS
ID(DC)
(V
Power Dissiation Limited
Limited
DS(on)
1
R
ID - Drain Current - A
ID(pulse)
10 ms
PW = 100 s
µ
1 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
PT - Total Power Dissipation - W
0
20
40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
VGS = 20 V
10 V
8 V
5
6 V
ID - Drain Current - A
Pulsed
TC = 25 ˚C
Single Pulse
0.1
1
10 100 1000
V
DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
TA = –25 ˚C
25 ˚C
10
75 ˚C
125 ˚C
1.0
ID - Drain Current - A
0.1
0
51015
GS - Gate to Source Volta
V
e - V
Pulsed
VDS = 10 V
0
10
V
DS - Drain to Source Voltage - V
20
30
40
3
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