National Semiconductor MM54HC374, MM74HC374 Service Manual
MM54HC374/MM74HC374
TRI-STATE
General Description
These high speed Octal D-Type Flip-Flops utilize advanced
silicon-gate CMOS technology. They possess the high noise
immunity and low power consumption of standard CMOS
integrated circuits, as well as the ability to drive 15 LS-TTL
loads. Due to the large output drive capability and the TRISTATE feature, these devices are ideally suited for interfacing with bus lines in a bus organized system.
These devices are positive edge triggered flip-flops. Data at
the D inputs, meeting the setup and hold time requirements,
are transferred to the Q outputs on positive going transitions
of the CLOCK (CK) input. When a high logic level is applied
to the OUTPUT CONTROL (OC) input, all outputs go to a
high impedance state, regardless of what signals are present at the other inputs and the state of the storage elements.
Connection Diagram
Octal D-Type Flip-Flop
É
Dual-In-Line Package
January 1988
The 54HC/74HC logic family is speed, function, and pinout
compatible with the standard 54LS/74LS logic family. All
inputs are protected from damage due to static discharge by
internal diode clamps to V
and ground.
CC
Features
Y
Typical propagation delay: 20 ns
Y
Wide operating voltage range: 2– 6V
Y
Low input current: 1 mA maximum
Y
Low quiescent current: 80 mA maximum
Y
Compatible with bus-oriented systems
Y
Output drive capability: 15 LS-TTL loads
MM54HC374/MM74HC374 TRI-STATE Octal D-Type Flip-Flop
Top View
Order Number MM54HC374 or MM74HC374
TL/F/5336– 1
Truth Table
e
H
Output
Control
TRI-STATEÉis a registered trademark of National Semiconductor Corp
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Clock Data Output
L
L
LLXQ
HXXZ
u
u
TL/F/5336
HH
LL
0
high Level, LeLow Level
e
X
don’t Care
e
transition from low-to-high
u
e
Z
high impedance state
e
Q
the level of the output before steady state
0
input conditions were established
Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
)
b
0.5 toa7.0V
b
1.5 to V
b
CC
0.5 to V
CC
b
65§Ctoa150§C
a
a
g
g
g
1.5V
0.5V
20 mA
35 mA
70 mA
Supply Voltage (V
CC
)
DC Input Voltage (VIN)
DC Output Voltage (V
OUT
)
Clamp Diode Current (IIK,IOK)
DC Output Current, per pin (I
OUT
)
DC VCCor GND Current, per pin (ICC)
Storage Temperature Range (T
STG
Supply Voltage (V
)26V
CC
DC Input or Output Voltage 0 V
(V
IN,VOUT
)
Operating Temp. Range (TA)
MM74HC
MM54HC
Input Rise or Fall Times
e
V
2.0V(tr,tf) 1000 ns
CC
e
V
4.5V 500 ns
CC
e
V
6.0V 400 ns
CC
Power Dissipation (PD)
(Note 3) 600 mW
S.O. Package only 500 mW
Lead Temp. (T
) (Soldering 10 seconds) 260§C
L
DC Electrical Characteristics
Symbol Parameter Conditions V
CC
A
e
T
25§C
Typ Guaranteed Limits
V
Minimum High Level 2.0V 1.5 1.5 1.5 V
IH
Input Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
Maximum Low Level 2.0V 0.5 0.5 0.5 V
IL
Input Voltage** 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
Minimum High Level V
OH
Output Voltage
e
VIHor V
l
IN
I
OUT
IL
s
20 mA 2.0V 2.0 1.9 1.9 1.9 V
l
4.5V 4.5 4.4 4.4 4.4 V
6.0V 6.0 5.9 5.9 5.9 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
l
IN
I
OUT
e
V
Maximum Low Level V
OL
Output Voltage
IL
s
6.0 mA 4.5V 4.2 3.98 3.84 3.7 V
l
s
7.8 mA 6.0V 5.7 5.48 5.34 5.2 V
l
VIHor V
IL
s
20 mA 2.0V 0 0.1 0.1 0.1 V
l
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
I
IN
I
OZ
Maximum Input V
Current
Maximum TRI-STATE V
Output Leakage V
Current
I
CC
Maximum Quiescent V
Supply Current I
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:
Note 4: For a power supply of 5V
with this supply. Worst case V
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
I
OZ
**V
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
g
and VILoccur at V
IH
e
IN
e
IN
OUT
e
IN
OUT
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
IL
s
6.0 mA 4.5V 0.2 0.26 0.33 0.4 V
l
s
7.8 mA 6.0V 0.2 0.26 0.33 0.4 V
l
VCCor GND 6.0V
VIH,OCeVIH6.0V
e
VCCor GND
g
0.1
g
0.5
VCCor GND 6.0V 8.0 80 160 mA
e
0 mA
b
12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICC, and
CC
74HC 54HC
eb
T
40 to 85§CT
A
g
1.0
g
5
Min Max Units
V
§
§
Units
b
b
40
55
A
eb
55 to 125§C
g
g
CC
a
85
a
125
1.0 mA
10 mA
C
C
2
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