National Semiconductor LM1896, LM2896 Technical data

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LM1896/LM2896 Dual Audio Power Amplifier

February 1995

General Description

The LM1896 is a high performance 6V stereo power amplifier designed to deliver 1 watt/channel into 4X or 2 watts bridged monaural into 8X. Utilizing a unique patented compensation scheme, the LM1896 is ideal for sensitive AM radio applications. This new circuit technique exhibits lower wideband noise, lower distortion, and less AM radiation than conventional designs. The amplifier’s wide supply range (3V–9V) is ideal for battery operation. For higher supplies

l

(V

9V) the LM2896 is available in an 11-lead single-in-

S

line package. The LM2896 package has been redesigned, resulting in the slightly degraded thermal characteristics shown in the figure Device Dissipation vs Ambient Temperature.

Typical Applications

Features

Y

Low AM radiation

Y

Low noise

Y

3V, 4X, stereo P

Y

Wide supply operation 3V–15V (LM2896)

Y

Low distortion

Y

No turn on ‘‘pop’’

Y

Adjustable voltage gain and bandwidth

Y

Smooth waveform clipping

Y

e

P

9W bridged, LM2896

o

e

250 mW

Applications

Y

Compact AM-FM radios

Y

Stereo tape recorders and players

Y

High power portable stereos

FIGURE 1. LM2896 in Bridge Configuration (A

Order Number LM1896N Order Number LM2896P

e

400, BWe20 kHz)

V

TL/H/7920– 1

See NS Package Number N14A See NS Package Number P11A

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

TL/H/7920

Absolute Maximum Ratings

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.

Supply Voltage

LM1896 V LM2896 V

Operating Temperature (Note 1) 0§Ctoa70§C

Storage Temperature

b

e

12V

S

e

18V

S

65§Ctoa150§C

Junction Temperature 150

Lead Temperature (Soldering, 10 sec.) 260§C

Thermal Resistance

i

(DIP) 30§C/W

JC

i

(DIP) 137§C/W

JA

i

(SIP) 10§C/W

JC

i

(SIP) 55§C/W

JA

C

§

Electrical Characteristics

Unless otherwise specified, T

e

T

25§C, V

TAB

Parameter Conditions

e

S

12V and R

e

25§C, A

A

e

L

V

8X. Test circuit shown in

e

200 (46 dB). For the LM1896; V

Figure 2

.

S

e

6V and R

e

4X. For LM2896,

L

LM1896 LM2896

Units

Min Typ Max Min Typ Max

Supply Current P

e

0W, Dual Mode 15 25 25 40 mA

o

Operating Supply Voltage 3 10 3 15 V

Output Power THDe10%, fe1 kHz

LM1896N-1 V LM1896N-2 V

LM2896P-1 V LM2896P-2 V

e

S

e

S

e

V

S

e

S

e

S

e

V

S

e

V

S

6V, R 6V, R 9V, R 12V, R 12V, R 9V, R 9V, R

e

4X Dual Mode 0.9 1.1 W/ch

L

e

8X Bridge Mode T

L

e

8X Dual Mode ( 1.3 W/ch

L

e

8X Dual Mode 2.0 2.5 W/ch

L

e

8X Bridge Mode

L

e

4X Bridge Mode 7.8 W

L

e

4X Dual Mode * 2.5 W/ch

L

e

25§C 1.8 2.1 W

A

e

T

25§C

TAB

7.2 9.0 W

Distortion fe1 kHz

e

P

50 mW 0.09 0.09 %

o

e

P

0.5W 0.11 0.11 %

o

e

P

1W 0.14 %

o

Power Supply Rejection C Ratio (PSRR) Output Referred, V

Channel Separation C

e

100 mF, fe1 kHz, C

BY

e

100 mF, fe1 kHz, C

BY

Output Referred

RIPPLE

Noise Equivalent Input Noise R

e

C

0.1 mF, BWe20b20 kHz 1.4 1.4 mV

IN

CCIR/ARM 1.4 1.4 mV

S

IN

e

IN

e

250 mV

e

0,

0.1 mF

b40b

b50b

54

64

b40b

b50b

54 dB

64 dB

Wideband 2.0 2.0 mV

DC Output Level 2.8 3 3.2 5.6 6 6.4 V

Input Impedance 50 100 350 50 100 350 kX

Input Offset Voltage 5 5 mV

Voltage Difference LM1896N-2, LM2896P-2 between Outputs

10 20 10 20 mV

Input Bias Current 120 120 nA

Note 1: For operation at ambient temperature greater than 25§C, the LM1896/LM2896 must be derated based on a maximum 150§C junction temperature using a thermal resistance which depends upon mounting techniques.

2

Typical Performance Curves

LM2896 Device Dissipation vs Ambient Temperature

LM1896 Maximum Device Dissipation vs Ambient Temperature

b

3 dB Bandwidth vs Voltage

Gain for Stable Operation

THD and Gain vs Frequency

e

A

54 dB, BWe30 kHz

V

THD and Gain vs Frequency

e

A

40 dB, BWe20 kHz

V

Power Supply Rejection Ratio (Referred to the Output) vs Frequency

THD and Gain vs Frequency

e

A

54 dB, BWe5 kHz

V

THD and Gain vs Frequency

e

A

34 dB, BWe50 kHz

V

Channel Separation (Referred to the Output) vs Frequency

THD and Gain vs Frequency

e

A

46 dB, BWe50 kHz

V

AM Recovered Audio and Noise vs Field Strength for Different Speaker Lead Placement

Power Output vs Supply Voltage

TL/H/7920– 2

3