National Semiconductor LM112, LM212, LM312 Technical data

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LM112/LM212/LM312 Operational Amplifiers

General Description

The LM112 series are micropower operational amplifiers
with very low offset-voltage and input-current errorsÐat
least a factor of ten better than FET amplifiers over a

b

55§Ctoa125§C temperature range. Similar to the LM108
series, that also use supergain transistors, they differ in that
they include internal frequency compensation and have pro­visions for offset adjustment with a single potentiometer.

These amplifiers will operate on supply voltages of

g

20V, drawing a quiescent current of only 300 mA. Per­formance is not appreciably affected over this range of volt­ages, so operation from unregulated power sources is easily
accomplished. They can also be run from a single supply
like the 5V used for digital circuits.

The LM112 series are the first IC amplifiers to improve reli­ability by including overvoltage protection for the MOS com­pensation capacitor. Without this feature, IC’s have been

g

known to suffer catastrophic failure caused by short-dura­tion overvoltage spikes on the supplies. Unlike other inter­nally-compensated IC amplifiers, it is possible to overcom­pensate with an external capacitor to increase stability mar­gin.

The LM212 is identical to the LM112, except that the LM212
has its performance guaranteed over a
temperature range instead of

2V to

LM312 is guaranteed over a 0
range.

b

55§Ctoa125§C. The

Ctoa70§C temperature

§

Features

Y

Maximum input bias current of 3 nA over temperature

Y

Offset current less than 400 pA over temperature

Y

Low noise

Y

Guaranteed drift specifications

September 1992

b

25§Ctoa85§C

LM112/LM212/LM312 Operational Amplifiers

Connection Diagram

Order Number LM112H, LM212H, LM312H or LM112H/883

Auxiliary Circuits

Offset Balancing

Metal Can Package

Top View

See NS Package Number H08C

Overcompensation for Greater Stability Margin

TL/H/7751– 2

TL/H/7751– 4

TL/H/7751– 3

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

TL/H/7751

Absolute Maximum Ratings

If Military/Aerospace specified devices are required, please contact the
National Semiconductor Sales Office/Distributors for availability and
specifications.
(Note 5)

LM112/LM212 LM312

Supply Voltage

g

20V

g

18V

Power Dissipation (Note 1) 500 mW 500 mW

Differential Input Current (Note 2)

Input Voltage (Note 3)

g

g

10 mA

15V

g

g

10 mA

15V

Output Short-Circuit Duration Continuous Continuous

Operating Temperature Range

LM112
LM212

Storage Temperature Range

b

55§Ctoa125§C0

b

25§Ctoa85§C

b

65§Ctoa150§Cb65§Ctoa150§C

Ctoa70§C

§

Lead Temperature (Soldering, 10 sec.) 300§C 300§C

ESD rating to be determined.

Electrical Characteristics (Note 4)

Parameter Conditions

Input Offset Voltage T

Input Offset Current T

Input Bias Current T

Input Resistance T

Supply Current T

Large Signal Voltage Gain T

e

25§C 0.7 2.0 2.0 7.5 mV

A

e

25§C 0.05 0.2 0.2 1 nA

A

e

25§C 0.8 2.0 1.5 7 nA

A

e

25§C30701040MX

A

e

25§C 0.3 0.6 0.3 0.8 mA

A

V

A

OUT

e

25§C, V

e

g

S

10V, R

e

g

15V

t

10 kX

L

Input Offset Voltage 3.0 10 mV

Average Temperature
Coefficient of Input 3.0 15 6.0 30 mV/§C
Offset Voltage

Input Offset Current 0.4 1.5 nA

Average Temperature
Coefficient of Input 0.5 2.5 2.0 10 pA/
Offset Current

Input Bias Current 3.0 10 nA

Supply Current T

Large Signal Voltage Gain V

Output Voltage Swing V

Input Voltage Range V

e

125§C 0.15 0.4 mA

A

e

g

15V, V

S

t

R

10 kX 25 15 V/mV

L

e

g

15V, R

S

e

g

15V

S

OUT

L

e

e

g

10 kX

10V

Common-Mode Rejection Ratio 85 100 80 100 dB

Supply Voltage Rejection Ratio 80 96 80 96 dB

Note 1: The maximum junction temperature of the LM112 is 150§C, LM212 is 100§C and LM312 is 85§C. For operating at elevated temperatures, devices in the H08
package must be derated based on a thermal resistance of 160

Note 2: The inputs are shunted with shunt diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is
applied between the inputs unless some limiting resistance is used.

Note 3: For supply voltages less than

Note 4: These specifications apply for

s

a

CsT

0

§

Note 5: Refer to RETS112X for LM112H military specifications.

70§C (LM312) unless otherwise noted.

A

g

15V, the absolute maximum input voltage is equal to the supply voltage.

s

g

5VsV

S

C/W, junction to ambient, or 20§C/W, junction to case.

§

g

20V andb55§CsT

A

LM112/LM212 LM312

Min Typ Max Min Typ Max

50 300 25 300 V/mV

g

g

s

a

125§C (LM112),b25§CsT

13

13.5

g

14

g

13g14 V

g

14 V

s

a

85§C (LM212),g5VsV

A

Units

§

s

g

15V and

S

C

2

Typical Performance Characteristics LM112/LM212

Input Currents Offset Error Drift Error

Input Noise Voltage Power Supply Rejection Output Impedance

Voltage Gain Output Swing Supply Current

Open Loop Frequency
Response

Large Signal Frequency
Response

Closed Loop

Voltage Follower Pulse
Response

TL/H/7751– 5

3

Typical Performance Characteristics LM312

Input Currents Offset Error Drift Error

Input Noise Voltage Power Supply Rejection Output Impedance

Voltage Gain Output Swing Supply Current

Open Loop Frequency
Response

Large Signal Frequency
Response

Closed Loop

Voltage Follower Pulse
Response

TL/H/7751– 6

4

Schematic Diagram

TL/H/7751– 1

5

Physical Dimensions inches (millimeters)

LM112/LM212/LM312 Operational Amplifiers

Order Number LM112H, LM212H, LM312H or LM112H/883

Metal Can Package (H)

NS Package Number H08C

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