The DS90C365A is a pin to pin compatible replacement for
DS90C363, DS90C363A and DS90C365. The DS90C365A
has additional features and improvements making it an ideal
replacement for DS90C363, DS90C363A and DS90C365.
family of LVDS Transmitters.
The DS90C365A transmitter converts 21 bits of LVCMOS/
LVTTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over the fourth LVDS
link. Every cycle of the transmit clock 21 bits RGB of input
data are sampled and transmitted. At a transmit clock frequency of 85 MHz, 21 bits of RGB data and 3 bits of LCD
timing and control data (FPLINE, FPFRAME, DRDY) are
transmitted at a rate of 595 Mbps per LVDS data channel.
Using a 85 MHz clock, the data throughput is 223.125
Mbytes/sec. This transmitter can be programmed for Rising
edge strobe or Falling edge strobe through a dedicated pin.
A Rising edge or Falling edge strobe transmitter will interoperate with a Falling edge strobe FPDLink Receiver without
any translation logic.
This chipset is an ideal means to solve EMI and cable size
problems associated with wide, high-speed TTL interfaces
with added Spead Spectrum Clocking support..
n No special start-up sequence required between
clock/data and /PD pins. Input signals (clock and data)
can be applied either before or after the device is
powered.
n Support Spread Spectrum Clocking up to 100kHz
frequency modulation & deviations of
spread or -5% down spread.
n “Input Clock Detection” feature will pull all LVDS pairs to
logic low when input clock is missing and when /PD pin
is logic high.
n 18 to 85 MHz shift clock support
n Tx power consumption
Grayscale
n Tx Power-down mode
n Supports VGA, SVGA, XGA, SXGA(dual pixel),
SXGA+(dual pixel), UXGA(dual pixel).
n Narrow bus reduces cable size and cost
n Up to 1.785 Gbps throughput
n Up to 223.125 Megabytes/sec bandwidth
n 345 mV (typ) swing LVDS devices for low EMI
n PLL requires no external components
n Compliant to TIA/EIA-644 LVDS standard
n Low profile 48-lead TSSOP package
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
DS90C365A
Supply Voltage (V
CMOS/TTL Input Voltage−0.5V to (V
LVDS Driver Output Voltage−0.3V to (V
LVDS Output Short Circuit
DurationContinuous
Junction Temperature+150˚C
Storage Temperature−65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec)+260˚C
Maximum Package Power Dissipation Capacity
MTD48 (TSSOP)
Package:
DS90C365AMT1.98 W
)−0.3V to +4V
CC
CC
CC
+ 0.3V)
+ 0.3V)
@
25˚C
Package Derating:
DS90C365AMT16 mW/˚C above +25˚C
ESD Rating
(HBM, 1.5kΩ, 100pF)7kV
(EIAJ, 0Ω, 200 pF)500V
Latch Up Tolerance
@
25˚C
Recommended Operating
Conditions
Min Nom Max Units
Supply Voltage (V
Operating Free Air
Temperature (T
Supply Noise Voltage
)
(V
CC
TxCLKIN frequency1885MHz
)3.03.33.6V
CC
)−10+25+70˚C
A
200 mV
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
SymbolParameterConditionsMinTypMaxUnits
LVCMOS/LVTTL DC SPECIFICATIONS
V
IH
V
IL
V
CL
I
IN
LVDS DC SPECIFICATIONS
V
OD
∆V
OD
V
OS
∆V
OS
I
OS
I
OZ
TRANSMITTER SUPPLY CURRENT
ICCTWTransmitter Supply Current
High Level Input Voltage2.0V
CC
Low Level Input Voltage00.8V
Input Clamp VoltageICL= −18 mA−0.79−1.5V
Input CurrentVIN= 0.4V, 2.5V or V
V
= GND−100µA
IN
CC
+1.8+10µA
Differential Output VoltageRL= 100Ω250345450mV
Change in VODbetween
35mV
complimentary output states
Offset Voltage (Note 4)1.131.251.38V
Change in VOSbetween
35mV
complimentary output states
Output Short Circuit CurrentV
Output TRI-STATE®CurrentPower Down = 0V,
Worst Case
= 0V, RL= 100Ω−3.5−5mA
OUT
±
1
V
=0VorV
OUT
R
= 100Ω,
L
= 5 pF,
C
L
Worst Case Pattern
CC
f = 25MHz2940mA
f = 40 MHz3445mA
±
10µA
(Figures 1, 3 ) " Typ "
values are given for
= 3.6V and TA=
V
CC
f = 65 MHz4255mA
+25˚C, " Max " values
are given for V
3.6V and T
A
=
CC
= −10˚C
f = 85 MHz4860mA
±
100mA
PP
V
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Electrical Characteristics (Continued)
Over recommended operating supply and temperature ranges unless otherwise specified.
SymbolParameterConditionsMinTypMaxUnits
TRANSMITTER SUPPLY CURRENT
ICCTGTransmitter Supply Current
16 Grayscale
R
L
C
L
= 100Ω,
= 5 pF,
16 Grayscale Pattern
(Figures 2, 3 ) " Typ "
values are given for
= 3.6V and TA=
V
CC
+25˚C, " Max " values
CC
= −10˚C
A
=
ICCTZTransmitter Supply Current
Power Down
are given for V
3.6V and T
Power Down = Low
Driver Outputs in TRI-STATE under
Power Down Mode
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2: Typical values are given for V
Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise
specified (except V
Note 4: V
OS
and ∆VOD).
OD
previously referred as VCM.
= 3.3V and TA= +25˚C unless specified otherwise.
CC
f = 25 MHz2840mA
f = 40 MHz3245mA
f = 65 MHz3950mA
f = 85 MHz4456mA
11150µA
DS90C365A
Recommended Transmitter Input Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
SymbolParameterMinTypMaxUnits
TCITTxCLK IN Transition Time (Figure 5)1.06.0ns
TCIPTxCLK IN Period (Figure 6)11.76T50ns
TCIHTxCLK IN High Time (Figure 6)0.35T0.5T0.65Tns
TCILTxCLK IN Low Time (Figure 6)0.35T0.5T0.65Tns
TXITTxIN , and /PD pin Transition Time1.56.0ns
TXPDMinimum pulse width for PWR DOWN pin signal.
1us
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Transmitter Switching Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
SymbolParameterMinTypMaxUnits
DS90C365A
LLHTLVDS Low-to-High Transition Time (Figure 4)0.751.4ns
LHLTLVDS High-to-Low Transition Time (Figure 4)0.751.4ns
TPPos0Transmitter Output Pulse Position (Figure 12)