National Semiconductor DS90C032B Technical data
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DS90C032B
LVDS Quad CMOS Differential Line Receiver
DS90C032B LVDS Quad CMOS Differential Line Receiver
March 1999
General Description
The DS90C032B is a quad CMOS differential line receiver
designed for applications requiring ultra low power dissipation and high data rates. The device is designed to support
data rates in excess of 155.5 Mbps (77.7 MHz) utilizing Low
Voltage Differential Signaling (LVDS) technology.
The DS90C032B accepts low voltage (350 mV) differential
input signals andtranslatesthem to CMOS (TTL compatible)
output levels. The receiver supports a TRI-STATE
that may be used to multiplex outputs.The receiver also supports OPEN and terminated (100Ω) input Fail-safe. Receiver
output will be HIGH for both Fail-safe conditions.
The DS90C032B provides power-off high impedance LVDS
inputs. This feature assures minimal loading effect on the
LVDS bus lines when V
The DS90C032B and companion line driver (DS90C031B)
provide a new alternative to high power pseudo-ECLdevices
for high speed point-to-point interface applications.
is not present.
CC
®
function
Features
>
n
155.5 Mbps (77.7 MHz) switching rates
n Accepts small swing (350 mV) differential signal levels
n High Impedance LVDS inputs with power down
n Ultra low power dissipation
n 600 ps maximum differential skew (5V, 25˚C)
n 6.0 ns maximum propagation delay
n Industrial operating temperature range
n Available in surface mount packaging (SOIC)
n Pin compatible with DS26C32A, MB570 (PECL) and
41LF (PECL)
n Supports OPEN and terminated input fail-safe
n Conforms to ANSI/TIA/EIA-644 LVDS standard
Connection Diagram Functional Diagram
Dual-In-Line
DS100990-1
Order Number
DS90C032BTM
See NS Package
Number M16A
DS100990-2
Receiver Truth Table
ENABLES INPUTS OUTPUT
EN EN
LH X Z
All other combinations V
of ENABLE inputs V
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS100990 www.national.com
*
R
IN+−RIN−
≥ 0.1V H
ID
≤ −0.1V L
ID
Fail-safe OPEN H
or Terminated
R
OUT
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
ESD Rating (Note 7)
(HBM, 1.5 kΩ, 100 pF) ≥ 2kV
(EIAJ, 0 Ω, 200 pF) ≥ 250V
Distributors for availability and specifications.
Supply Voltage (V
Input Voltage (R
Enable Input Voltage
(EN, EN
*
Output Voltage (R
Maximum Package Power Dissipation
) −0.3V to +6V
CC
) −0.3V to +5.8V
IN+,RIN−
) −0.3V to (VCC+ 0.3V)
) −0.3V to (VCC+ 0.3V)
OUT
@
+25˚C
M Package 1025 mW
Derate M Package 8.2 mW/˚C above +25˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature Range
Soldering (4 sec.) +260˚C
Maximum Junction
Temperature +150˚C
Recommended Operating
Conditions
Min Typ Max Units
Supply Voltage
)
(V
CC
Receiver Input
Voltage
Operating Free Air Temperature (T
DS90C032BT −40 +25 +85 ˚C
+4.5 +5.0 +5.5 V
GND 2.4 V
)
A
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3)
Symbol Parameter Conditions Pin Min Typ Max Units
V
V
I
V
V
I
I
V
V
I
V
I
I
Differential Input High Threshold VCM= +1.2V R
TH
Differential Input Low Threshold −100 mV
TL
Input Current V
IN
Output High Voltage I
OH
Output Low Voltage I
OL
Output Short Circuit Current Enabled, V
OS
Output TRI-STATE Current Disabled, V
OZ
Input High Voltage EN,
IH
Input Low Voltage 0.8 V
IL
Input Current −10
I
Input Clamp Voltage I
CL
No Load Supply Current EN, EN
CC
Receivers Enabled EN, EN
No Load Supply Current
CCZ
Receivers Disabled
=
+2.4V V
IN
=
V
0V −10
IN
=
−0.4 mA, V
OH
=
I
−0.4 mA, Input terminated 3.8 4.9 V
OH
=
2 mA, V
OL
OUT
=
−18 mA −1.5 −0.8 V
CL
=
*
=
*
EN=GND, EN
=
5.5V or 0V −10
CC
=
+200 mV R
ID
=
−200 mV 0.07 0.3 V
ID
=
0V (Note 8) −15 −60 −100 mA
=
0V or V
OUT
V
CC
CC
or GND, Inputs Open V
2.4 or 0.5, Inputs Open 3.7 11 mA
=
*
, Inputs Open 3.5 10 mA
V
CC
,
IN+
R
IN−
3.8 4.9 V
OUT
−10
2.0 V
*
EN
CC
+100 mV
±
1 +10 µA
±
1 +10 µA
±
1 +10 µA
±
1 +10 µA
3.5 10 mA
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Switching Characteristics
=
V
+5.0V, T
CC
Symbol Parameter Conditions Min Typ Max Units
t
PHLD
t
PLHD
t
SKD
t
SK1
t
TLH
t
THL
t
PHZ
t
PLZ
t
PZH
t
PZL
=
+25˚C (Notes 3, 4, 9)
A
Differential Propagation Delay High to Low C
Differential Propagation Delay Low to High V
Differential Skew |t
PHLD−tPLHD
|(
=
5 pF 1.5 3.40 5.0 ns
L
=
200 mV 1.5 3.48 5.0 ns
ID
Figure 1
and
Figure 2
) 0 80 600 ps
Channel-to-Channel Skew (Note 5) 0 0.6 1.0 ns
Rise Time 0.5 2.0 ns
Fall Time 0.5 2.0 ns
Disable Time High to Z R
Disable Time Low to Z C
Enable Time Z to High (
=
2kΩ 10 15 ns
L
=
10 pF 10 15 ns
L
Figure 3
and
Figure 4
) 4 10 ns
Enable Time Z to Low 410ns
Switching Characteristics
=
+5.0V
±
V
CC
Symbol Parameter Conditions Min Typ Max Units
t
t
t
t
t
t
t
t
t
t
t
Differential Propagation Delay High to Low C
PHLD
Differential Propagation Delay Low to High V
PLHD
Differential Skew |t
SKD
Channel-to-Channel Skew (Note 5) 0 0.6 1.5 ns
SK1
Chip to Chip Skew (Note 6) 5.0 ns
SK2
Rise Time 0.5 2.5 ns
TLH
Fall Time 0.5 2.5 ns
THL
Disable Time High to Z R
PHZ
Disable Time Low to Z C
PLZ
Enable Time Z to High (
PZH
Enable Time Z to Low 415ns
PZL
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Currentinto device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground unless otherwise specified.
Note 3: All typicals are given for: V
Note 4: Generator waveform for all tests unless otherwise specified: f=1 MHz, Z
Note 5: Channel-to-Channel Skew is defined as the difference between the propagation delay of one channel and that of the others on the same chip with an event
on the inputs.
Note 6: Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays.
Note 7: ESD Rating:
HBM (1.5 kΩ, 100 pF) ≥ 2kV
EIAJ (0Ω, 200 pF) ≥ 250V
Note 8: Output short circuit current (I
ceed maximum junction temperature specification.
Note 9: C
includes probe and jig capacitance.
L
10%,T
=
−40˚C to +85˚C (Notes 3, 4, 9)
A
=
5 pF 1.0 3.40 6.0 ns
L
=
200 mV 1.0 3.48 6.0 ns
PHLD−tPLHD
CC
OS
|(
=
=
+5.0V, T
) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time, do not ex-
+25˚C.
A
ID
Figure 1
and
Figure 2
) 0 0.08 1.2 ns
=
2kΩ 10 20 ns
L
=
10 pF 10 20 ns
L
Figure 3
and
Figure 4
) 4 15 ns
=
and tf(0%–100%) ≤ 1 ns for RINand trand tf≤ 6 ns for EN or EN*.
50Ω,t
O
r
Parameter Measurement Information
FIGURE 1. Receiver Propagation Delay and Transition Time Test Circuit
DS100990-3
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