The DS32EV400 programmable quad equalizer provides
compensation for transmission medium losses and reduces
the medium-induced deterministic jitter for four NRZ data
channels. The DS32EV400 is optimized for operation up to
3.2 Gbps for both cables and FR4 traces. Each equalizer
channel has eight levels of input equalization that can be programmed by three control pins, or individually through a Serial
Management Bus (SMBus) interface.
The equalizer supports both AC and DC-coupled data paths
for long run length data patterns such as PRBS-31, and balanced codes such as 8b/10b. The device uses differential
current-mode logic (CML) inputs and outputs. The
DS32EV400 is available in a 7 mm x 7 mm 48-pin leadless
LLP package. Power is supplied from either a 2.5V or 3.3V
supply.
Simplified Application Diagram
Features
Equalizes up to 14 dB loss at 3.2 Gbps
■
8 levels of programmable equalization
■
Settable through control pins or SMBus interface
■
Operates up to 3.2 Gbps with 40” FR4 traces
■
0.12 UI residual deterministic jitter at 3.2 Gbps with 40”
■
FR4 traces
Single 2.5V or 3.3V power supply
■
Signal Detect for individual channels
■
Standby mode for individual channels
■
Supports AC or DC-Coupling with wide input common-
EN044I, LVCMOSEnable Equalizer Channel 0 input. When held High, normal operation is selected. When held
EN142I, LVCMOSEnable Equalizer Channel 1 input. When held High, normal operation is selected. When held
EN240I, LVCMOSEnable Equalizer Channel 2 input. When held High, normal operation is selected. When held
EN338I, LVCMOSEnable Equalizer Channel 3 input. When held High, normal operation is selected. When held
FEB21I, LVCMOSForce External Boost. When held high, the equalizer boost setting is controlled by BST_[2:0]
SD045O, LVCMOS Equalizer Ch0 Signal Detect Output. Produces a High when signal is detected.
SD143O, LVCMOS Equalizer Ch1 Signal Detect Output. Produces a High when signal is detected.
SD241O, LVCMOS Equalizer Ch2 Signal Detect Output. Produces a High when signal is detected.
SD339O, LVCMOS Equalizer Ch3 Signal Detect Output. Produces a High when signal is detected.
POWER
V
DD
GND22, 24,
DAPPADPowerGround reference. The exposed pad at the center of the package must be connected to
1
2
4
5
8
9
11
12
36
35
33
32
29
28
26
25
37
14
23
3, 6, 7,
10, 13,
15, 46
27, 30,
31, 34
I, CML
I, CML
I, CML
I, CML
O, CML
O, CML
O, CML
O, CML
I, LVCMOSBST_2, BST_1, and BST_0 select the equalizer strength for all EQ channels. BST_2 is
PowerVDD = 2.5V ± 5% or 3.3V ± 10%. VDD pins should be tied to VDD plane through low inductance
PowerGround reference. GND should be tied to a solid ground plane through a low impedance
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω
terminating resistor is connected between IN_0+ and IN_0-. Refer to Figure 6.
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω
terminating resistor is connected between IN_1+ and IN_1-. Refer to Figure 6.
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω
terminating resistor is connected between IN_2+ and IN_2-. Refer to Figure 6.
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω
terminating resistor is connected between IN_3+ and IN_3-. Refer to Figure 6.
Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50Ω
terminating resistor connects OUT_0+ to VDD and OUT_0- to VDD.
Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50Ω
terminating resistor connects OUT_1+ to VDD and OUT_1- to VDD.
Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50Ω
terminating resistor connects OUT_2+ to VDD and OUT_2- to VDD.
Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50Ω
terminating resistor connects OUT_3+ to VDD and OUT_3- to VDD.
internally pulled high. BST_1 and BST_0 are internally pulled low.
Low, standby mode is selected. EN is internally pulled High.
Low, standby mode is selected. EN is internally pulled High.
Low, standby mode is selected. EN is internally pulled High.
Low, standby mode is selected. EN is internally pulled High.
pins. When held low, the equalizer boost setting is controlled by SMBus (see Table 1) register
bits. FEB is internally pulled High.
path. A 0.01μF bypass capacitor should be connected between each VDD pin to GND planes.
path.
ground plane of the board.
www.national.com2
Pin NamePin #I/O, TypeDescription
SERIAL MANAGEMENT BUS (SMBus) INTERFACE CONTROL PINS
SDA
SDC
CS
Other
Reserv19, 20
Note: I = Input O = Output
18
17
16
47,48
I/O, LVCMOS
I, LVCMOS
I, LVCMOS
Reserved. Do not connect.
Data input/output (bi-directional). Internally pulled high.
Clock input. Internally pulled high.
Chip select. When pulled high, access to the equalizer SMBus registers are enabled. When
pulled low, access to the equalizer SMBus registers are disabled. Please refer to “SMBus
configuration Registers” section for detail information.
Connection Diagram
DS32EV400
30031926
Ordering Information
NSIDPackage Type, Qty SizePackage ID
DS32EV400SQ48–pin LLP (7 mm x 7 mm x 0.8 mm, 0.5 mm pitch, reel of 250SQA48D
DS32EV400SQX48–pin LLP (7 mm x 7 mm x 0.8 mm, 0.5 mm pitch, reel of 2500SQA48D
3www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
DS32EV400
Supply Voltage (VDD)
CMOS Input Voltage-0.5V + 4.0V
CMOS Output Voltage-0.5V to 4.0V
CML Input/Output Voltage-0.5V to 4.0V
Junction temperature+150°C
Storage temperature-65°C to +150°C
Lead temperature (Soldering, 4
Seconds)
-0.5V to +4.0V
+260°C
ESD rating
HBM, 1.5 kΩ, 100 pF
EIAJ, 0Ω, 200pF
Thermal Resistance
θJA, no airflow
Recommended Operating
Conditions
MinTypMax Units
Supply Voltage (Note 9)
V
to GND2.3752.52.625V
DD2.5
V
to GND3.03.33.6V
DD3.3
Ambient Temperature-4025+85°C
Electrical Characteristics
Over recommended operating supply and temperature ranges with default register settings unless other specified.
SymbolParameterConditionsMin
POWER
PPower Supply ConsumptionDevice Output Enabled
(EN [0–3] = High), V
DD3.3
Device Output Disable
(EN [0–3] = Low), V
DD3.3
PPower Supply ConsumptionDevice Output Enabled
(EN [0–3] = High), V
DD2.5
Device Output Disable
(EN [0–3] = Low), V
DD2.5
NSupply Noise Tolerance (Note 4)50 Hz — 100 Hz
100 Hz — 10 MHz
10 MHz — 1.6 GHz
LVCMOS DC SPECIFICATIONS
V
IH
V
IL
V
OH
V
OL
I
IN
High Level Input VoltageV
V
DD3.3
DD2.5
Low Level Input Voltage-0.30.8V
High Level Output VoltageIOH = -3mA, V
IOH = -3mA, V
DD3.3
DD2.5
Low Level Output VoltageIOL = 3mA0.4V
Input Leakage CurrentVIN = V
DD
VIN = GND-15
I
IN-P
Input Leakage Current with
Internal Pull-Down/Up Resistors
VIN = VDD, with internal pull-down
resistors
VIN = GND, with internal pull-up
resistors
SIGNAL DETECT
SDHSignal Detect ON Threshold Level Default input signal level to assert
SD pin, 3.2 Gbps
SDISignal Detect OFF Threshold
Level
Default input signal level to deassert SD, 3.2Gbps
2.0
1.6
2.4V
2.0
+15
+120
-20
70mV
40mV
Typ
(note 2)
490700mW
360490mW
100
> 9 kV
> 250 V
30°C/W
MaxUnits
100mW
30
mV
40
10
V
V
DD3.3
DD2.5
mV
mV
P-P
P-P
P-P
V
V
μA
μA
μA
μA
p-p
p-p
www.national.com4
DS32EV400
SymbolParameterConditionsMin
Typ
(note 2)
MaxUnits
CML RECEIVER INPUTS (IN_n+, IN_n-)
V
TX
Source Transmit Launch Signal
Level (IN diff)
AC-Coupled or DC-Coupled
Requirement, Differential
measurement at point A.
4001600
mV
P-P
Figure 1
V
INTRE
V
DDTX
V
ICMDC
R
LI
R
IN
Input Threshold VoltageDifferential measurement at
point B. Figure 1
Supply Voltage of Transmitter toEQDC-Coupled Requirement
(Note 10)
Input Common Mode VoltageDC-Coupled Requirement,
Differential measurement at point
A. Figure 1, (Note 7)
Differential Input Return Loss100MHz – 1.6GHz, with fixture’s
effect de-embedded
Input ResistanceDifferential across IN+ and IN-,
Figure 6.
120
V
V
DD
DDTX
0.2
–
1.6
V
–
DDTX
0.8
10dB
85100115
mV
P-P
V
V
Ω
CML OUTPUTS (OUT_n+, OUT_n-)
V
OD
Output Differential Voltage Level
(OUT diff)
Differential measurement with
OUT+ and OUT- terminated by
50Ω to GND, AC-Coupled
500620725
mV
P-P
Figure 2
V
OCM
Output Common Mode VoltageSingle-ended measurement DC-
Coupled with 50Ω terminations
VDD– 0.2
VDD– 0.1
V
(Note 7)
tR, t
F
Transition Time20% to 80% of differential output
voltage, measured within 1” from
2060ps
output pins. Figure 2, (Note 7)
R
O
R
LO
Output ResistanceSingle ended to V
DD
Differential Output Return Loss100 MHz – 1.6 GHz, with fixture’s
effect de-embedded. IN+ = static
425058
10dB
Ω
high.
t
PLHD
t
PHLD
t
CCSK
t
PPSK
Differential Low to High
Propagation Delay
Differential High to Low
Propagation Delay
Inter Pair Channel to Channel
Skew
Propagation delay measurement
at 50% VO between input to
output, 100 Mbps. Figure 3,
(Note 7)
Difference in 50% crossing
between channels
Part to Part Output SkewDifference in 50% crossing
between outputs
240ps
240ps
7ps
20ps
EQUALIZATION
DJ1Residual Deterministic Jitter
at 3.2 Gbps
40” of 6 mil microstrip FR4,
EQ Setting 0x07, PRBS-7 (27-1)
0.120.20
UI
P-P
pattern. (Note 5, 6)
DJ2Residual Deterministic Jitter
at 2.5 Gbps
40” of 6 mil microstrip FR4,
EQ Setting 0x07, PRBS-7 (27-1)
0.10.16
UI
P-P
pattern. (Note 5, 6)
DJ3Residual Deterministic Jitter
at 1 Gbps
40” of 6 mil microstrip FR4,
EQ Setting 0x07, PRBS-7 (27-1)
0.05
UI
P-P
pattern. (Note 5, 6)
RJRandom Jitter(Note 7, 8)0.5psrms
5www.national.com
SymbolParameterConditionsMin
Typ
(note 2)
MaxUnits
SIGNAL DETECT and ENABLE TIMING
t
DS32EV400
ZISD
t
IZSD
Input OFF to ON detect — SD
Output High Response Time
Input ON to OFF detect — SD
Output Low Response Time
Response time measurement at
VIN to SD output, VIN = 800 mV
100 Mbps, 40” of 6 mil microstrip
FR4
P-P
35ns
,
400ns
(Figure 1, 4), (Note 7)
t
OZOED
t
ZOED
EN High to Output ON Response
Time
EN Low to Output OFF Response
Time
Response time measurement at
EN input to VO, VIN = 800 mV
P-P
100 Mbps, 40” of 6 mil microstrip
FR4
,
150ns
5ns
(Figure 1, 5), (Note 7)
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in
the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the
device should not be operated beyond such conditions. Absolute Maximum Numbers are guaranteed for a junction temperature range of –40°C to +125°C. Models
are validated to Maximum Operating Voltages only.
Note 2: Typical values represent most likely parametric norms at VDD = 3.3V, TA = 25°C, and at the Recommended Operation Conditions at the time of product
characterization and are not guaranteed.
Note 3: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 4: Allowed supply noise (mV
Note 5: Specification is guaranteed by characterization and is not tested in production.
Note 6: Deterministic jitter is measured at the differential outputs (point C of Figure 1), minus the deterministic jitter before the test channel (point A of Figure 1).
Random jitter is removed through the use of averaging or similar means.
Note 7: Measured with clock like {11111 00000} pattern.
Note 8: Random jitter contributed by the equalizer is defined as sqrt (J
Figure 1; JIN is the random jitter at the input of the equalizer in ps-rms, see Figure 1.
Note 9: The V
is VDD = 2.5V ± 5% and V
DD2.5
sine wave) under typical conditions.
P-P
is VDD = 3.3V ± 10%.
DD3.3
OUT
2
− J
2
). J
is the random jitter at the equalizer outputs in ps-rms, see point C of
IN
OUT
www.national.com6
Loading...
+ 12 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.