National Semiconductor DS32EV400 Technical data

DS32EV400 Programmable Quad Equalizer
DS32EV400 Programmable Quad Equalizer
April 18, 2008

General Description

The DS32EV400 programmable quad equalizer provides compensation for transmission medium losses and reduces the medium-induced deterministic jitter for four NRZ data channels. The DS32EV400 is optimized for operation up to
The equalizer supports both AC and DC-coupled data paths for long run length data patterns such as PRBS-31, and bal­anced codes such as 8b/10b. The device uses differential current-mode logic (CML) inputs and outputs. The DS32EV400 is available in a 7 mm x 7 mm 48-pin leadless LLP package. Power is supplied from either a 2.5V or 3.3V supply.

Simplified Application Diagram

Features

Equalizes up to 14 dB loss at 3.2 Gbps
8 levels of programmable equalization
Settable through control pins or SMBus interface
Operates up to 3.2 Gbps with 40” FR4 traces
0.12 UI residual deterministic jitter at 3.2 Gbps with 40”
FR4 traces Single 2.5V or 3.3V power supply
Signal Detect for individual channels
Standby mode for individual channels
Supports AC or DC-Coupling with wide input common-
mode Low power consumption: 375 mW Typ at 2.5V
Small 7 mm x 7 mm 48-pin LLP package
9 kV HBM ESD Rating
-40 to 85°C operating temperature range
30031924
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Pin Descriptions

Pin Name Pin # I/O, Type Description
HIGH SPEED DIFFERENTIAL I/O
DS32EV400
IN_0+ IN_0–
IN_1+ IN_1–
IN_2+ IN_2–
IN_3+ IN_3–
OUT_0+ OUT_0–
OUT_1+ OUT_1–
OUT_2+ OUT_2–
OUT_3+ OUT_3–
EQUALIZATION CONTROL
BST_2 BST_1 BST_0
DEVICE CONTROL
EN0 44 I, LVCMOS Enable Equalizer Channel 0 input. When held High, normal operation is selected. When held
EN1 42 I, LVCMOS Enable Equalizer Channel 1 input. When held High, normal operation is selected. When held
EN2 40 I, LVCMOS Enable Equalizer Channel 2 input. When held High, normal operation is selected. When held
EN3 38 I, LVCMOS Enable Equalizer Channel 3 input. When held High, normal operation is selected. When held
FEB 21 I, LVCMOS Force External Boost. When held high, the equalizer boost setting is controlled by BST_[2:0]
SD0 45 O, LVCMOS Equalizer Ch0 Signal Detect Output. Produces a High when signal is detected.
SD1 43 O, LVCMOS Equalizer Ch1 Signal Detect Output. Produces a High when signal is detected.
SD2 41 O, LVCMOS Equalizer Ch2 Signal Detect Output. Produces a High when signal is detected.
SD3 39 O, LVCMOS Equalizer Ch3 Signal Detect Output. Produces a High when signal is detected.
POWER
V
DD
GND 22, 24,
DAP PAD Power Ground reference. The exposed pad at the center of the package must be connected to
1 2
4 5
8 9
11 12
36 35
33 32
29 28
26 25
37 14 23
3, 6, 7, 10, 13,
15, 46
27, 30,
31, 34
I, CML
I, CML
I, CML
I, CML
O, CML
O, CML
O, CML
O, CML
I, LVCMOS BST_2, BST_1, and BST_0 select the equalizer strength for all EQ channels. BST_2 is
Power VDD = 2.5V ± 5% or 3.3V ± 10%. VDD pins should be tied to VDD plane through low inductance
Power Ground reference. GND should be tied to a solid ground plane through a low impedance
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100 terminating resistor is connected between IN_0+ and IN_0-. Refer to Figure 6.
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100 terminating resistor is connected between IN_1+ and IN_1-. Refer to Figure 6.
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100 terminating resistor is connected between IN_2+ and IN_2-. Refer to Figure 6.
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100 terminating resistor is connected between IN_3+ and IN_3-. Refer to Figure 6.
Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50 terminating resistor connects OUT_0+ to VDD and OUT_0- to VDD.
Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50 terminating resistor connects OUT_1+ to VDD and OUT_1- to VDD.
Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50 terminating resistor connects OUT_2+ to VDD and OUT_2- to VDD.
Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50 terminating resistor connects OUT_3+ to VDD and OUT_3- to VDD.
internally pulled high. BST_1 and BST_0 are internally pulled low.
Low, standby mode is selected. EN is internally pulled High.
Low, standby mode is selected. EN is internally pulled High.
Low, standby mode is selected. EN is internally pulled High.
Low, standby mode is selected. EN is internally pulled High.
pins. When held low, the equalizer boost setting is controlled by SMBus (see Table 1) register bits. FEB is internally pulled High.
path. A 0.01μF bypass capacitor should be connected between each VDD pin to GND planes.
path.
ground plane of the board.
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Pin Name Pin # I/O, Type Description
SERIAL MANAGEMENT BUS (SMBus) INTERFACE CONTROL PINS
SDA SDC CS
Other
Reserv 19, 20
Note: I = Input O = Output
18 17 16
47,48
I/O, LVCMOS
I, LVCMOS I, LVCMOS
Reserved. Do not connect.
Data input/output (bi-directional). Internally pulled high. Clock input. Internally pulled high. Chip select. When pulled high, access to the equalizer SMBus registers are enabled. When pulled low, access to the equalizer SMBus registers are disabled. Please refer to “SMBus configuration Registers” section for detail information.

Connection Diagram

DS32EV400
30031926

Ordering Information

NSID Package Type, Qty Size Package ID
DS32EV400SQ 48–pin LLP (7 mm x 7 mm x 0.8 mm, 0.5 mm pitch, reel of 250 SQA48D
DS32EV400SQX 48–pin LLP (7 mm x 7 mm x 0.8 mm, 0.5 mm pitch, reel of 2500 SQA48D
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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
DS32EV400
Supply Voltage (VDD)
CMOS Input Voltage -0.5V + 4.0V CMOS Output Voltage -0.5V to 4.0V CML Input/Output Voltage -0.5V to 4.0V
Junction temperature +150°C Storage temperature -65°C to +150°C Lead temperature (Soldering, 4
Seconds)
-0.5V to +4.0V
+260°C
ESD rating
HBM, 1.5 k, 100 pF
EIAJ, 0, 200pF
Thermal Resistance
 θJA, no airflow

Recommended Operating Conditions

Min Typ Max Units
Supply Voltage (Note 9) V
to GND 2.375 2.5 2.625 V
DD2.5
V
to GND 3.0 3.3 3.6 V
DD3.3
Ambient Temperature -40 25 +85 °C

Electrical Characteristics

Over recommended operating supply and temperature ranges with default register settings unless other specified.
Symbol Parameter Conditions Min
POWER
P Power Supply Consumption Device Output Enabled
(EN [0–3] = High), V
DD3.3
Device Output Disable (EN [0–3] = Low), V
DD3.3
P Power Supply Consumption Device Output Enabled
(EN [0–3] = High), V
DD2.5
Device Output Disable (EN [0–3] = Low), V
DD2.5
N Supply Noise Tolerance (Note 4) 50 Hz — 100 Hz
100 Hz — 10 MHz 10 MHz — 1.6 GHz
LVCMOS DC SPECIFICATIONS
V
IH
V
IL
V
OH
V
OL
I
IN
High Level Input Voltage V
V
DD3.3
DD2.5
Low Level Input Voltage -0.3 0.8 V
High Level Output Voltage IOH = -3mA, V
IOH = -3mA, V
DD3.3
DD2.5
Low Level Output Voltage IOL = 3mA 0.4 V
Input Leakage Current VIN = V
DD
VIN = GND -15
I
IN-P
Input Leakage Current with Internal Pull-Down/Up Resistors
VIN = VDD, with internal pull-down resistors
VIN = GND, with internal pull-up resistors
SIGNAL DETECT
SDH Signal Detect ON Threshold Level Default input signal level to assert
SD pin, 3.2 Gbps
SDI Signal Detect OFF Threshold
Level
Default input signal level to de­assert SD, 3.2Gbps
2.0
1.6
2.4 V
2.0
+15
+120
-20
70 mV
40 mV
Typ
(note 2)
490 700 mW
360 490 mW
100
> 9 kV
> 250 V
30°C/W
Max Units
100 mW
30
mV
40 10
V
V
DD3.3
DD2.5
mV mV
P-P
P-P
P-P
V
V
μA
μA
μA
μA
p-p
p-p
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DS32EV400
Symbol Parameter Conditions Min
Typ
(note 2)
Max Units
CML RECEIVER INPUTS (IN_n+, IN_n-)
V
TX
Source Transmit Launch Signal Level (IN diff)
AC-Coupled or DC-Coupled Requirement, Differential measurement at point A.
400 1600
mV
P-P
Figure 1
V
INTRE
V
DDTX
V
ICMDC
R
LI
R
IN
Input Threshold Voltage Differential measurement at
point B. Figure 1
Supply Voltage of Transmitter toEQDC-Coupled Requirement
(Note 10)
Input Common Mode Voltage DC-Coupled Requirement,
Differential measurement at point A. Figure 1, (Note 7)
Differential Input Return Loss 100MHz – 1.6GHz, with fixture’s
effect de-embedded
Input Resistance Differential across IN+ and IN-,
Figure 6.
120
V
V
DD
DDTX
0.2
1.6
V
DDTX
0.8
10 dB
85 100 115
mV
P-P
V
V
CML OUTPUTS (OUT_n+, OUT_n-)
V
OD
Output Differential Voltage Level (OUT diff)
Differential measurement with OUT+ and OUT- terminated by 50 to GND, AC-Coupled
500 620 725
mV
P-P
Figure 2
V
OCM
Output Common Mode Voltage Single-ended measurement DC-
Coupled with 50 terminations
VDD– 0.2
VDD– 0.1
V
(Note 7)
tR, t
F
Transition Time 20% to 80% of differential output
voltage, measured within 1” from
20 60 ps
output pins. Figure 2, (Note 7)
R
O
R
LO
Output Resistance Single ended to V
DD
Differential Output Return Loss 100 MHz – 1.6 GHz, with fixture’s
effect de-embedded. IN+ = static
42 50 58
10 dB
high.
t
PLHD
t
PHLD
t
CCSK
t
PPSK
Differential Low to High Propagation Delay
Differential High to Low Propagation Delay
Inter Pair Channel to Channel Skew
Propagation delay measurement at 50% VO between input to output, 100 Mbps. Figure 3, (Note 7)
Difference in 50% crossing between channels
Part to Part Output Skew Difference in 50% crossing
between outputs
240 ps
240 ps
7 ps
20 ps
EQUALIZATION
DJ1 Residual Deterministic Jitter
at 3.2 Gbps
40” of 6 mil microstrip FR4, EQ Setting 0x07, PRBS-7 (27-1)
0.12 0.20
UI
P-P
pattern. (Note 5, 6)
DJ2 Residual Deterministic Jitter
at 2.5 Gbps
40” of 6 mil microstrip FR4, EQ Setting 0x07, PRBS-7 (27-1)
0.1 0.16
UI
P-P
pattern. (Note 5, 6)
DJ3 Residual Deterministic Jitter
at 1 Gbps
40” of 6 mil microstrip FR4, EQ Setting 0x07, PRBS-7 (27-1)
0.05
UI
P-P
pattern. (Note 5, 6)
RJ Random Jitter (Note 7, 8) 0.5 psrms
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Symbol Parameter Conditions Min
Typ
(note 2)
Max Units
SIGNAL DETECT and ENABLE TIMING
t
DS32EV400
ZISD
t
IZSD
Input OFF to ON detect — SD Output High Response Time
Input ON to OFF detect — SD Output Low Response Time
Response time measurement at VIN to SD output, VIN = 800 mV 100 Mbps, 40” of 6 mil microstrip FR4
P-P
35 ns
,
400 ns
(Figure 1, 4), (Note 7)
t
OZOED
t
ZOED
EN High to Output ON Response Time
EN Low to Output OFF Response Time
Response time measurement at EN input to VO, VIN = 800 mV
P-P
100 Mbps, 40” of 6 mil microstrip FR4
,
150 ns
5 ns
(Figure 1, 5), (Note 7)
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute Maximum Numbers are guaranteed for a junction temperature range of –40°C to +125°C. Models are validated to Maximum Operating Voltages only.
Note 2: Typical values represent most likely parametric norms at VDD = 3.3V, TA = 25°C, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed.
Note 3: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 4: Allowed supply noise (mV
Note 5: Specification is guaranteed by characterization and is not tested in production.
Note 6: Deterministic jitter is measured at the differential outputs (point C of Figure 1), minus the deterministic jitter before the test channel (point A of Figure 1).
Random jitter is removed through the use of averaging or similar means.
Note 7: Measured with clock like {11111 00000} pattern.
Note 8: Random jitter contributed by the equalizer is defined as sqrt (J
Figure 1; JIN is the random jitter at the input of the equalizer in ps-rms, see Figure 1.
Note 9: The V
is VDD = 2.5V ± 5% and V
DD2.5
sine wave) under typical conditions.
P-P
is VDD = 3.3V ± 10%.
DD3.3
OUT
2
− J
2
). J
is the random jitter at the equalizer outputs in ps-rms, see point C of
IN
OUT
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