National Semiconductor DS16149, DS36149 Technical data

February 1986

DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers

DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers

General Description

The DS16149/DS36149 and DS16179/DS36179 are Hex
MOS drivers with outputs designed to drive large capacitive
loads up to 500 pF associated with MOS memory systems.
PNP input transistors are employed to reduce input currents
allowing the large fan-out to these drivers needed in memo­ry systems. The circuit has Schottky-clamped transistor log­ic for minimum propagation delay, and a disable control that
places the outputs in the logic ‘‘1’’ state (see truth table).
This is especially useful in MOS RAM applications where a
set of address lines has to be in the logic ‘’1’’ state during
refresh.

The DS16149/DS36149 has a 15 X resistor in series with
the outputs to dampen transients caused by the fast-switch­ing output. The DS16179/DS36179 has a direct low imped­ance output for use with or without an external resistor.

Schematic Diagram

Features

Y

High speed capabilities

Typ 9 ns driving 50 pF

#

Typ 29 ns driving 500 pF

#

Y

Built-in 15 X damping resistor (DS16149/DS36149)

Y

Same pin-out as DM8096 and DM74366

TL/F/7553– 1

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

TL/F/7553

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage 7.0V

Logical ‘‘1’’ Input Voltage 7.0V

Logical ‘‘0’’ Input Voltage

Storage Temperature Range

b

b

1.5V

65§Ctoa150§C

Operating Conditions

Supply Voltage (V
Temperature (T

DS16149, DS16179

CC

)

A

DS36149, DS36179 0

Min Max Units

) 4.5 5.5 V

b

55

a

125

a

70

C

§

C

§

Maximum Power Dissipation* at 25§C

Cavity Package 1371 mW
Molded Package 1280 mW

Lead Temperature (Soldering 10 seconds) 300

*Derate cavity package 9.1 mW/§C above 25§C; derate molded package

C above 25§C.

10.2 m/W

§

C

§

DC Electrical Characteristics (Notes 2 and 3)

Symbol Parameter Conditions Min Typ Max Units

VIN(1) Logical ‘‘1’’ Input Voltage 2.0 V

VIN(0) Logical ‘‘0’’ Input Voltage 0.8 V

IIN(1) Logical ‘‘1’’ Input Current V

IIN(0) Logical ‘‘0’’ Input Current V

V

CLAMP

V

OH

V

OL

V

OH

V

OL

I

ID

I

OD

I

CC

Input Clamp Voltage V

Logical ‘‘1’’ Output Voltage
(No Load)

Logical ‘‘0’’ Output Voltage
(No Load)

Logical ‘‘1’’ Output Voltage DS16149 2.4 3.5 V
(With Load)

Logical ‘‘0’’ Output Voltage DS16149 0.6 1.1 V
(With Load)

Logical ‘‘1’’ Drive Current V

Logical ‘‘0’’ Drive Current V

Power Supply Current Disable Inputse0V

e

5.5V, V

CC

e

5.5V, V

CC

e

4.5V, I

CC

e

4.5V, I

V

CC

e

V

4.5V, I

CC

e

4.5V, I

V

CC

e

4.5V, I

V

CC

e

4.5V, V

CC

e

4.5V, V

CC

e

V

5.5V

CC

e

5.5V 0.1 40 mA

IN

IN

OH

OL

OH

IN

e

eb

eb

e

eb

0.5V

18 mA

10 mA

10 mA

1.0 mA

DS16149/DS16179 3.4 4.3 V

DS36149/DS36179 3.5 4.3 V

DS16149/DS16179 0.25 0.4 V

DS36149/DS36179 0.25 0.35 V

DS16179 2.5 3.5 V

DS36149 2.6 3.5 V

b

b

50

250 mA

b

0.75b1.2 V

DS36179 2.7 3.5 V

e

20 mA

OL

DS16179 0.4 0.5 V

DS36149 0.6 1.0 V

DS36179 0.4 0.5 V

e

0V, (Note 4)

OUT

e

4.5V, (Note 4) 150 mA

OUT

All Other Inputs

e

3V

b

250 mA

33 60 mA

All Inputse0V 14 20 mA

Switching Characteristics (V

CC

e

5V, T

e

25§C) (Note 4)

A

Symbol Parameter Conditions Min Typ Max Units

e

t

g

S

t

’

S

t

F

Storage Delay Negative Edge

Storage Delay Positive Edge

Fall Time

Figure 1

(

(

Figure 1

Figure 1

(

C

50 pF 4.5 7 ns

L

)

)

)

e

C

500 pF 7.5 12 ns

L

e

50 pF 5 8 ns

C

L

e

C

500 pF 8 13 ns

L

e

C

50 pF 5 8 ns

L

e

C

500 pF 22 35 ns

L

2