MXIC MX26L1620TI-12, MX26L1620XAC-12, MX26L1620TI-90, MX26L1620XAI-12, MX26L1620XBI-90 Datasheet

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FEATURES

ADVANCED INFORMATION

MX26L1620

16M-BIT [1M x 16] CMOS

MULTIPLE-TIME-PROGRAMMABLE EPROM

• 1,048,576 x 16 byte structure

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Low Vcc write inhibit is equal to or less than 2.5V

• Compatible with JEDEC standard

• High Performance

- Fast access time: 90/120ns (typ.)

- Fast program time: 35s/chip (typ.)

- Fast erase time: 45s/chip (typ.)

• Low Power Consumption

- Low active read current: 10mA (typ.) at 5MHz

- Low standby current: 30uA (typ.)

• Minimum 100 erase/program cycle

GENERAL DESCRIPTION

The MX26L1620 is a 16M bit MTP EPROMTM organized as 1M bytes of 16 bits. MXIC's MTP EPROM most cost-effective and reliable read/write non-volatile random access memory. The MX26L1620 is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

offer the

• 10-year data retention

• Status Reply

- Data polling & Toggle bits provide detection of program and erase operation completion

• 12V ACC input pin provides accelerated program

capability

• Output voltages and input voltages on the device is

determined by the voltage on the VI/O pin.

- VI/O voltage range:1.65V~3.6V

• Package

- 44-Pin SOP

- 48-Pin TSOP

- 48-Ball CSP

MXIC's MTP EPROM memory contents even after 100 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.

technology reliably stores

The standard MX26L1620 offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26L1620 has separate chip enable (CE) and output enable OE controls. MXIC's MTP EPROMTM augment EPROM functionality with in-circuit electrical erasure and programming. The MX26L1620 uses a command register to manage this functionality.

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The MX26L1620 uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/ Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epiprocess. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V.

PIN CONFIGURATION

48 CSP

1. Ball pitch=0.75mm for MX26L1620XA (TOP view, Ball down)

12345678

MX26L1620

A13

A14

A15

A16

V I/O

GND

A11

A10

A12

Q14

Q15

Q13

ACC

RESET

Q11

Q12

8.0 mm

A18

VCC

A19 A7

A17

Q10

2. Ball pitch=0.8mm for MX26L1620XB(TOP view, Ball down)

ABCDEFGH

7.0 mm

GND

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A13

A12

RESET

A14

A10

A15

A11

A19

A16

V I/O

Q14

Q12

Q15

Q13

VCC

GND

7.0 mm

ACC

A17

A18

Q10

Q11

GND

8.0 mm

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A15 A14 A13 A12 A11 A10

A8 NC NC

RESET

ACC VCC

A19 A18 A17

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

A16 V

I/O

GND Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 V

Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0

48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

MX26L1620

44 SOP

NC A18 A17

GND

Q2 Q10

Q3 Q11

2 3 4

12 13 14

MX26L1620

15 16 17 18 19 20 21 22

A19

A10

A11

A12

A13

A14

A15

A16

GND

Q15

Q14

Q13

Q12

VCC

PIN DESCRIPTION

SYMBOL PIN NAME

A0~A19 Address Input Q0~Q15 Data Inputs/Outputs CE Chip Enable Input WE Write Enable Input OE Output Enable Input RESET Hardware Reset Pin, Active Low VC C +3.0V single power supply ACC Hardware Acceleration Pin V I/O I/O power supply (for 48 TSOP and

48 CSP package only) GN D Device Ground N C Pin Not Connected Internally

48 TSOP

LOGIC SYMBOL

A0-A19

CE OE WE RESET

ACC

Q0-Q15

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BLOCK DIAGRAM

CE OE WE

CONTROL INPUT

LOGIC

PROGRAM/ERASE

HIGH VOLTAGE

MX26L1620

WRITE

STATE

MACHINE

(WSM)

A0-A19

ADDRESS

LATCH

AND

BUFFER

X-DECODER

MX26L1620

FLASH ARRA Y

Y-DECODER

Y-PASS GATE

SENSE

AMPLIFIER

DATA LATCH

STATE

ARRAY

SOURCE

COMMAND

DATA DECODER

PGM

DATA

COMMAND

DATA LATCH

PROGRAM

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Q0-Q15

I/O BUFFER

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AUTOMATIC PROGRAMMING

The MX26L1620 is word programmable using the Automatic Programming algorithm. The Automatic Progr amming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. The typical chip programming time at room temperature of the MX26L1620 is less than 20 seconds.

AUTOMATIC PROGRAMMING ALGORITHM

MXIC's Automatic Programming algorithm require the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The de vice automatically times the programming pulse width, provides the program verification, and counts the number of sequences. A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation.

AUTOMATIC CHIP ERASE

All data are latched on the rising edge of WE or CE, whichever happens later .

MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX26L1620 electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed b y using the EPROM programming mechanism of hot electron injection.

During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. After the state machine has completed its task, it will allow the command register to respond to its full command set.

The entire chip is bulk erased using 50 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. T ypical erasure at room temper ature is accomplished in less than 45 seconds. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device.

AUTOMATIC ERASE ALGORITHM

MXIC's Automatic Erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire arra y. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the status of the programming operation.

Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry . During write cycles, the command register internally latches address and data needed for the programming and erase operations. All address are latched on the falling edge of WE or CE, whiche ver happens later.

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Table 1. BUS OPERATION(1)

Operation CE OE WE RESET Address Q15~Q0

Read L L H H A Write(Note 1) L H L H A

Standby VCC±0.3V X X VCC±0.3V X High-Z Output Disable L H H H X High-Z Reset X X X L X High-Z

Legend: L=Logic LOW=VIL,H=Logic High=VIH,VID=12.0±0.5V,X=Don't Care, AIN=Address IN, DIN=Data IN, D

Notes:

1. When the ACC pin is at VHH, the device enters the accelerated program mode . See "Accelerated Prog ram Operations" for more information.

OUT

=Data OUT

OUT

Table 2. AUTOSELECT CODES (High Voltage Method)

A5 A8 A14

Operation CE OE WE A0 A1 to A6 to A9 to A15~A21 Q15~Q0

A2 A7 A10

Read Silicon ID L L H L L X L X V Manufactures Code Read Silicon ID L L H H L X L X V Device Code Secured Silscon xx88h Sector Indicator L L H H H X L X V Bit(Q7) xx08h

X X00 C2 H

X X 22FEH

X X (factory locked)

(non-factory locked)

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REQUIREMENTS FOR READING ARRAY DATA

To read array data from the outputs, the system must drive the CE and OE pins to VIL. CE is the po wer control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH.

The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory contect occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid address on the device address inputs produce valid data on the device data outputs. The de vice remains enabled for read access until the command register contents are altered.

WRITE COMMANDS/COMMAND SEQUENCES

To program data to the device, the system must drive WE and CE to VIL, and OE to VIH.

An erase operation can erase the entire device. The "Writing specific address and data commands or sequences into the command register initiates device operations. Table 1 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data."section has details on erasing the entire chip.

After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal reqister (which is separate from the memory array) on Q15-Q0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command Sequence section for more information.

ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC Characteristics" section contains timing specification table and timing diagrams for write operations.

STANDBY MODE

MX26L1620 can be set into Standby mode with two different approaches. One is using both CE and RESET

pins and the other one is using RESET pin only . When using both pins of CE and RESET, a CMOS

Standby mode is achieved with both pins held at Vcc ±

0.3V . Under this condition, the current consumed is less than 50uA (typ.). If both of the CE and RESET are held at VIH, b ut not within the range of VCC ± 0.3V , the de vice will still be in the standby mode, but the standby currect will be larger. During Auto Algorithm operation, Vcc active current (Icc2) is required even CE = "H" until the operation is complated. The de vice can be read with standard access time (tCE) from either of these standby modes.

When using only RESET, a CMOS standby mode is achieved with RESET input held at Vss ± 0.3V, Under this condition the current is consumed less than 50uA (typ.). Once the RESET pin is taken high,the device is back to active without recovery delay.

In the standby mode the outputs are in the high impedance state, independent of the OE input.

MX26L1620 is capable to provide the Automatic Standby Mode to restrain power consumption during read-out of data. This mode can be used eff ectively with an application requested low power consumption such as handy terminals.

To active this mode, MX26L1620 automatically switch themselves to low power mode when MX26L1620 addresses remain stable during access time of tACC+30ns. It is not necessary to control CE, WE, and OE on the mode. Under the mode, the current consumed is typically 50uA (CMOS level).

OUTPUT DISABLE

With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins to be in a high impedance state.

RESET OPERATION

The RESET pin provides a hardware method of resetting the device to reading arra y data. When the RESET pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET pluse. The

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device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitated once the device is ready to accept another command sequence, to ensure data integrity

Current is reduced for the duration of the RESET pulse. When RESET is held at VSS±0.3V, the device draws CMOS standby current (ICC4). If RESET is held at VIL but not within VSS±0.3V, the standby current will be greater.

The RESET pin may be tied to system reset circuitry . A system reset would that also reset the MTP EPROM.

Refer to the AC Characteristics tables for RESET parameters and to Figure 14 for the timing diagram.

SILICON ID READ OPERATION

MTP EPROM are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. EPROM programmers typically access signature codes by raising A9 to a high voltage. How ever , multiple xing high voltage onto address lines is not generally desired system design practice.

Table 3

VCC / VI/O V oltage Range

Part No. VCC=2.7V to 3.6VVCC=2.7V to 3.6V

VI/O=2.7V to 3.6VVI/O=1.65V to 2.6V

MX26L1620-90 90ns 100ns MX26L1620-12 120ns 130ns

Notes: T ypical v alues measured at VCC=2.7V to 3.6V,

VI/O=2.7V to 3.6V

DATA PROTECTION

The MX26L1620 is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC pow er-up and power-down transition or system noise.

MX26L1620 provides hardware method to access the silicon ID read operation. Which method requires VID on A9 pin, VIL on CE, OE, A6, and A1 pins. Which apply VIL on A0 pin, the device will output MXIC's manufacture code of C2H. Which apply VIH on A0 pin, the device will output MX26L1620 device code of 22FEH.

VI/O PIN OPERATION

MX26L1620 is capable to provide the I/O prower supply (VI/O) pin to control Input/Output voltage levels of the device. The data outputs and voltage tolerated at its data input is determined by the voltage on the VI/O pin. This device is allows to operate in 1.8V or 3V system as required.

SECURED SILICON SECTOR

The MX26L1620 features a Flash memory region where the system may access through a command sequence to create a permant part identification as so called Electronic Serial Number (ESN) in the device. Once this region is programmed, any further modification on the region is impossible. The secured silicon sector is a 512 words in length, and uses a Secured Silicon Sector Indicator Bit (Q7) to indicate whether or not the Secured Silicon Sector is locked when shipped from the f actory. This bit is permanently set at the factory and cannot be changed, which prevent duplication of a factory locked part. This ensures the security of the ESN once the product is shipped to the field.

The MX26L1620 offers the device with Secured Silicon Sector either factory locked or custor lockab le. The factory-locked version is always protected when shipped from the factory , and has the Secured Silicon Sector Indicator Bit permanently set to a "1". The customerlockable version is shipped with the Secured Silicon Sector unprotected, allowing customer to utilize that sector in any form they pref er . The customer-loc kable v er-

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sion has the secured sector Indicator Bit permanently set to a "0". Therefore, the Secured Silicon Sector Indicator Bit permanently set to a "0". Therefore, the Second Silicon Sector Indicator Bit prevents customer, lockable device from being used to replace devices that are factory locked.

The system access the Secured Silicon Sector through a command sequence (refer to "Enter Secured Silicon/ Exit Secured Silicon Sector command Sequence). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the address normally occupied by the address 000000h-0001FFh. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device rever ts to sending command to address 000000h-0001FFFh.

LOW VCC WRITE INHIBIT

When VCC is less than VLKO the device does not accept any write cycles. This protects dataduring VCC power-up and power-do wn. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until VCC is greater thanVLK O. The system must provide the proper signals to the control pins to prevent unintentional write when VCC is greater than VLK O.

FACTORY LOCKED:Secured Silicon Sector Programmed and Protected At the Factory

In device with an ESN, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way . A f actory locked device has an 8-word random ESN at address 000000h-000007h.

CUSTOMER LOCKABLE:Secured Silicon Sector NOT Programmed or Protected At the Factory

As an alternative to the factory-locked version, the device may be ordered such that the customer may program and protect the 512-word Secured Silicon Sector. Programming and protecting the Secured Silicon Sector must be used with caution since, once protected, there is no procedure available for unprotecting the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way.

The Secured Silicon Sector area can be protected using the following procedures:

Write the three-cycle Enter Secured Silicon Sector Region command sequence. This allows in-system protection of the Secured Silicon Sector without raising any device pin to a high voltage. Note that method is only applicable to the Secured Silicon Sector.

WRITE PULSE "GLITCH" PROTECTION

Noise pulses of less than 5ns(typical) on CE or WE will not initiate a write cycle.

LOGICAL INHIBIT

Writing is inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one.

POWER-UP SEQUENCE

The MX26L1620 powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences.

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Once the Secured Silicon Sector is programmed, locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing the remainder of the array .

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SOFTWARE COMMAND DEFINTIONS

MX26L1620

Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them

All addresses are latched on the falling edge of WE or CE, whichever happens later . All data are latched on ris-

ing edge of WE or CE, whiche ver happens first. in the improper sequence will reset the device to the read mode. Table 4 defines the valid register command sequences. Either of the two reset command sequences will reset the device(when applicable).

TABLE4. MX26L1620 COMMAND DEFINITIONS

First Bus Second Bus Third Bus Fourth Bus Fifth Bus Sixth Bus

Command Bus Cycle Cycle Cycle Cycle Cycle Cycle

Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Read(Note 5) 1 RA RD Reset(Note 6) 1 XXX F0 Autoselect(Note 7) Manufacturer ID 4 555 AA 2AA 55 555 90 X00 C2 Device ID 4 555 AA 2AA 55 555 90 X01 22FE Secured Sector 4 55 5 AA 2AA 55 5 55 90 x03 see Factory Protect Note9 Enter Secured Silicon 3 555 AA 2AA 5 5 5 55 88 Sector Exit Secured Silicon 4 555 AA 2AA 5 5 5 55 9 0 xxx 00 Sector Porgram 4 555 AA 2AA 55 5 55 A0 PA PD Chip Erase 6 55 5 AA 2 AA 5 5 55 5 8 0 55 5 AA 2AA 55 5 55 10 Deep power down 3 55 5 AA 2 AA 55 5 55 C 0

Legend: X=Don't care RA=Address of the memory location to be read. RD=Data read from location RA during read operation. P A=Address of the memory location to be programmed.

Addresses are latched on the falling edge of the WE or CE pulse. PD=Data to be programmed at location PA. Data is latched on the rising edge of WE or CE pulse.

Notes:

1.See Table 1 for descriptions of bus operations.

2.All values are in hexadecimal.

3.Except when reading array or autoselect data, all bus cycles are write operation.

4.Address bits are don't care for unlock and command cycles , except when PA is required.

5.No unlock or command cycles required when device is in read mode.

6.The Reset command is required to return to the read mode when the device is in the autoselect mode or if Q5 goes high.

7.The fourth cycle of the autoselect command sequence is a read cycle.

8.Command is valid when device is ready to read array data or when device is in autoselect mode.

9.The data is 88h for factory locked and 08h for non-factory locked.

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READING ARRAY DATA

The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read arra y data after completing an Automatic Program or Automatic Erase algorithm.

The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or while in the autoselect mode. See the "Reset Command" section, next.

RESET COMMAND

Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command.

The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete.

The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data. Once programming begins ,howe ver , the device ignores reset commands until the operation is complete.

The reset command may be written between the sequence cycles in an SILICON ID READ command sequence. Once in the SILICON ID READ mode, the reset command data.

must be written to return to reading array

ID READ command. The device then enters the SILICON ID READ mode, and the system may read at any address any number of times, without init iating another command sequence. A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h returns the device code.

The system must write the reset command to exit the autoselect mode and return to reading array data.

WORD PROGRAM COMMAND SEQUENCE

The command sequence requires four bus cycles, and is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 4 shows the address and data requirements for the byte program command sequence.

When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using Q7, Q6. See "Write Operation Status" for information on these status bits.

Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The Word Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity.

not required

If Q5 goes high during a program or erase operation, writing the reset command returns the device to reading array data.

SILICON ID READ COMMAND SEQUENCE

The SILICON ID READ command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not. Table 4 shows the address and data requirements. This method is an alternative to that shown in Table 1, which is intended for EPROM programmers and requires VID on address bit A9.

The SILICON ID READ command sequence is initiated by writing two unlock cycles, followed by the SILICON

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Programming is allowed in any sequence. A bit cannot be programmed from a "0" back to a "1". Cause the Data Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can conver t a "0" to a "1".

ACCELERATED PROGRAM OPERATIONS

The device offers accelerated program operations through the ACC pin. When the system asserts VHH on the ACC pin, the device automatically bypass the two "Unlock" write cycle. The device uses the higher voltage on the ACC pin to accelerate the operation. Note that the ACC pin must not be at VHH any oper ation other than accelerated programming, or device damage may result.

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